Download DATA SHEET BLF245B VHF push-pull power MOS transistor

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D096
BLF245B
VHF push-pull power MOS
transistor
Product specification
Supersedes data of 2000 Oct 17
2003 Aug 04
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
FEATURES
BLF245B
PIN CONFIGURATION
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures
excellent reliability.
1
andbook, halfpage
4
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor designed for large signal
amplifier applications in the VHF
frequency range.
2
Top view
s
g1
5
DESCRIPTION
The transistor is encapsulated in a
4-lead, SOT279A balanced flange
package, with a ceramic cap. The
mounting flange provides the
common source connection for the
transistors.
d2
g2
d1
3
MSB018
MBB157
Fig.1 Simplified outline and symbol.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
PINNING - SOT279A
PIN
WARNING
DESCRIPTION
1
drain 1
Product and environmental safety - toxic materials
2
gate 1
3
gate 2
4
drain 2
5
source
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a push-pull common source test circuit.
MODE OF OPERATION
CW, class-B
2003 Aug 04
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
175
28
30
>14
>55
2
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF245B
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor section unless otherwise specified
VDS
drain-source voltage
−
65
V
±VGS
gate-source voltage
−
20
V
ID
DC drain current
−
4.5
A
Ptot
total power dissipation
Tmb ≤ 25 °C; total device; both sections equally loaded −
75
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from
junction to mounting base
total device; both sections equally loaded
2.3
K/W
Rth mb-h
thermal resistance from
mounting base to heatsink
total device; both sections equally loaded
0.3
K/W
MRA922
102
handbook, halfpage
MRA929
120
handbook,
halfpage
ID
(A)
Ptot
(W)
10
80
(2)
(1)
(1)
(2)
40
1
10−1
1
10
VDS (V)
0
102
0
(1) Current in this area may be limited by RDSon.
80
120
Th (oC)
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
(2) Tmb = 25 °C.
Total device; both sections equally loaded.
Fig.2 DC SOAR.
2003 Aug 04
40
Fig.3 Power derating curves.
3
160
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF245B
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX.
UNIT
ID = 5 mA; VGS = 0
65
−
−
V
Per transistor section
V(BR)DSS
drain-source breakdown voltage
IDSS
drain-source leakage current
VGS = 0; VDS = 28 V
−
−
1
mA
IGSS
gate-source leakage current
±VGS = 20 V; VDS = 0
−
−
1
µA
VGSth
gate-source threshold voltage
ID = 5 mA; VDS = 10 V
2
−
4.5
V
gfs
forward transconductance
ID = 0.75 A; VDS = 10 V
600
850
−
mS
RDSon
drain-source on-state resistance
ID = 0.75 A; VGS = 10 V
−
0.8
1.5
Ω
IDSX
on-state drain current
VGS = 10 V; VDS = 10 V
−
5
−
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
60
−
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
40
−
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
4.5
−
pF
VGS group indicator
LIMITS
(V)
GROUP
LIMITS
(V)
GROUP
MIN.
MAX.
MIN.
MAX.
A
2.0
2.1
B
2.1
2.2
O
3.3
3.4
P
3.4
3.5
C
2.2
2.3
Q
3.5
3.6
D
E
2.3
2.4
R
3.6
3.7
2.4
2.5
S
3.7
3.8
F
2.5
2.6
T
3.8
3.9
G
2.6
2.7
U
3.9
4.0
H
2.7
2.8
V
4.0
4.1
J
2.8
2.9
W
4.1
4.2
K
2.9
3.0
X
4.2
4.3
L
3.0
3.1
Y
4.3
4.4
M
3.1
3.2
Z
4.4
4.5
N
3.2
3.3
2003 Aug 04
4
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF245B
MGP180
MGP181
6
2
handbook, halfpage
handbook, halfpage
T.C.
(mV/K)
Tj = 25 °C
ID
(A)
0
125 °C
4
−2
−4
2
−6
−8
0
1
102
10
ID (mA)
0
103
4
8
12
VGS (V)
16
VDS = 10 V.
Fig.4
VDS = 10 V.
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
Fig.5
MGP182
2
Drain current as a function of gate-source
voltage; typical values per section.
MGP183
160
handbook, halfpage
handbook, halfpage
C
(pF)
RDSon
(Ω)
120
1
80
Cis
Cos
40
0
0
40
80
120
Tj ( C)
0
160
0
ID = 0.75 A; VGS = 10 V.
Fig.6
20
30
VDS (V)
40
VGS = 0; f = 1 MHz.
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
2003 Aug 04
10
Fig.7
5
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF245B
MGP184
20
handbook, halfpage
Crs
(pF)
10
0
0
10
20
30
VDS (V)
40
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of
drain-source voltage; typical values per
section.
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.3 K/W; unless otherwise specified.
RF performance in a push-pull, common source, class-B test circuit.
MODE OF OPERATION
CW, class-B
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
175
28
2 × 25
30
>14
typ. 18
>55
typ. 65
Ruggedness in class-B operation
The BLF245B is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases, under the
following conditions:
VDS = 28 V, f = 175 MHz at rated output power.
2003 Aug 04
6
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
MGP185
20
Gp
handbook, halfpage
Gp
BLF245B
PL
(W)
ηD
(dB)
15
MGP186
40
handbook, halfpage
80
30
60
ηD
10
40
5
20
0
20
10
0
0
0
10
20
30
PL (W)
0
40
0.5
1.0
1.5
PIN (W)
2.0
Class-B operation; VDS = 28 V; IDQ = 2 × 25 mA;
ZL = 8.8 + j12.7 Ω; f = 175 MHz.
Class-B operation; VDS = 28 V; IDQ = 2 × 25 mA;
ZL = 8.8 + j12.7 Ω; f = 175 MHz.
Fig.9
Fig.10 Load power as a function of input power;
typical values.
Power gain and efficiency as functions of
output power; typical values.
2003 Aug 04
7
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C11
C12
C13
C7
L10
C8
C14 R7
C15
R1
D.U.T.
L1
8
50 Ω
input
L4
C1
C3
L2
C4
L6
C5
L8
C6
L14
L16
L12
C27
C21
C22
C23
C24
L20
L21
50 Ω
output
C26
C2
L3
C25
L18
Philips Semiconductors
+VG
+VD
VHF push-pull power MOS transistor
R5
handbook, full pagewidth
2003 Aug 04
R3
L5
L7
L13
L9
L17
L19
L22
L15
C16
R2
C17 R8
C10
L11
C9
C18
C19
R4
MGP187
+VD
Fig.11 Test circuit for class-B operation.
Product specification
f = 175 MHz.
R6
BLF245B
C20
+VG
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF245B
List of components (see Fig.11)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1,C2
multilayer ceramic chip capacitor; note 1
270 pF
C3
multilayer ceramic chip capacitor; note 1
24 pF
C4
film dielectric trimmer
4 to 60 pF
C5, C25, C26
multilayer ceramic chip capacitor; note 1
91 pF
C6, C22, C24
film dielectric trimmer
5 to 60 pF
2222 809 08003
C7, C9, C12,
C14, C17, C19
multilayer ceramic chip capacitor
100 nF
2222 852 47104
C8, C10
multilayer ceramic chip capacitor; note 1
680 pF
C11, C20
multilayer ceramic chip capacitor
10 nF
C13, C18
electrolytic capacitor
10 µF, 63 V
C15, C16
multilayer ceramic chip capacitor; note 1
100 pF
C21, C27
multilayer ceramic chip capacitor; note 1
75 pF
C23
multilayer ceramic chip capacitor; note 1
36 pF
L1, L3, L20, L22
stripline; note 2
55 Ω
length 111 mm
width 2.5 mm
L2, L21
semi-rigid cable
50 Ω
length 111 mm
ext. dia. 2.2 mm
L4, L5
stripline; note 2
49.5 Ω
length 28 mm
width 3 mm
L6, L7
stripline; note 2
49.5 Ω
length 22.5 mm
width 3 mm
L8, L9
stripline; note 2
49.5 Ω
length 4.5 mm
width 3 mm
L10, L11
grade 3B Ferroxcube RF choke
L12, L13
stripline; note 2
49.5 Ω
length 21 mm
width 3 mm
L14, L15
4 turns enamelled 1 mm copper wire
70 nH
length 9 mm
int. dia. 6 mm
leads 2 × 5 mm
L16, L17
stripline; note 2
49.5 Ω
length 30 mm
width 3 mm
L18, L19
stripline; note 2
49.5 Ω
length 26 mm
width 3 mm
R1, R2
0.4 W metal film resistor
10 Ω
R3, R4
10 turns potentiometer
50 Ω
R5, R6
0.4 W metal film resistor
205 kΩ
R7, R8
0.4 W metal film resistor
10 Ω
2222 809 08002
2222 852 47103
4312 020 36642
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with epoxy glass dielectric (εr = 4.5),
thickness 1⁄16 inch. The other side of the board is fully metallized and used as a ground plane. The ground planes on
each side of the board are connected together by means of copper straps and hollow rivets.
2003 Aug 04
9
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF245B
200 mm
handbook, full pagewidth
rivet
rivet
copper
strap
copper
strap
copper
strap
copper
strap
rivet
rivet
copper
strap
110 mm
copper
strap
copper
strap
copper
strap
rivet
rivet
MBA377
+VG
+VD
andbook, full pagewidth
C11
L10
L1 + L2
C15 C14
C1
C3
C5
L4
L5
C2
C4
L20
C13
R7
L14
C7
C8
R1
L6
C27
L7
C6
R2
C12
L16
C25
C23
L18
L19
C24
C26
L12
C21
L8
L9
L13
C22
L17
C10
C9
L15
C16
C17
R8
L11
L3
L21 + L22
C18
C19
+VG
C20
+VD
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as a ground. Earth connections are made by means of copper straps and hollow rivets for a
direct contact between the upper and lower sheets.
Fig.12 Component layout for 175 MHz test circuit.
2003 Aug 04
10
MBA378
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF245B
MGP188
10
MGP189
30
handbook, halfpage
handbook, halfpage
Zi
(Ω)
ZL
(Ω)
5
ri
20
xi
10
0
XL
−5
−10
RL
0
0
100
200
300
f (MHz)
400
0
100
200
300
f (MHz)
400
Class-B operation; VDS = 28 V; IDQ = 2 × 25 mA;
RGS = 10 Ω; PL = 30 W (total device).
Class-B operation; VDS = 28 V; IDQ = 2 × 25 mA;
RGS = 10 Ω; PL = 30 W (total device).
Fig.13 Input impedance as a function of frequency
(series components); typical values per
section.
Fig.14 Load impedance as a function of frequency
(series components); typical values per
section.
MGP190
25
Gp
handbook, halfpage
(dB)
20
15
handbook, halfpage
10
5
Zi
ZL
MBA379
0
0
100
200
300
f (MHz)
400
Class-B operation; VDS = 28 V; IDQ = 2 × 25 mA;
RGS = 10 Ω; PL = 30 W (total device).
Fig.16 Power gain as a function of frequency;
typical values per section.
Fig.15 Definition of MOS impedance.
2003 Aug 04
11
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF245B
PACKAGE OUTLINE
Flanged double-ended ceramic package; 2 mounting holes; 4 leads
SOT279A
D
A
F
5
D1
U1
B
q
C
w2 M C M
H1
1
c
4
E1
H
U2
E
A
2
w1 M A M B M
p
3
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
E
E1
e
F
H
H1
p
Q
q
U1
U2
w1
w2
w3
mm
6.84
6.01
1.65
1.40
0.15
0.10
9.25
9.04
9.27
9.02
5.94
5.74
5.97
5.72
3.05
3.05
2.54
12.96
11.94
4.96
4.19
3.48
3.23
4.34
4.04
18.42
24.90
24.64
5.97
5.72
0.25
0.51
0.25
inches
0.269 0.065 0.006 0.364 0.365 0.234 0.235
0.120 0.510 0.195 0.137 0.171
0.980 0.235
0.725
0.010 0.020 0.010
0.120
0.237 0.055 0.004 0.356 0.355 0.226 0.225
0.100 0.470 0.165 0.127 0.159
0.970 0.225
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
SOT279A
2003 Aug 04
EUROPEAN
PROJECTION
ISSUE DATE
99-03-29
12
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF245B
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Aug 04
13
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA75
© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/06/pp14
Date of release: 2003
Aug 04
Document order number:
9397 750 11596