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LM386 Low Voltage Audio Power Amplifier General Description Features The LM386 is a power amplifier designed for use in low voltage consumer applications. The gain is internally set to 20 to keep external part count low, but the addition of an external resistor and capacitor between pins 1 and 8 will increase the gain to any value up to 200. The inputs are ground referenced while the output is automatically biased to one half the supply voltage. The quiescent power drain is only 24 milliwatts when operating from a 6 volt supply, making the LM386 ideal for battery operation. n n n n n n n n n Battery operation Minimum external parts Wide supply voltage range: 4V–12V or 5V–18V Low quiescent current drain: 4 mA Voltage gains from 20 to 200 Ground referenced input Self-centering output quiescent voltage Low distortion Available in 8 pin MSOP package Applications n n n n n n n n AM-FM radio amplifiers Portable tape player amplifiers Intercoms TV sound systems Line drivers Ultrasonic drivers Small servo drivers Power converters Equivalent Schematic and Connection Diagrams Small Outline, Molded Mini Small Outline, and Dual-In-Line Packages DS006976-2 DS006976-1 © 2000 National Semiconductor Corporation DS006976 Top View Order Number LM386M-1, LM386MM-1, LM386N-1, LM386N-3 or LM386N-4 See NS Package Number M08A, MUA08A or N08E www.national.com LM386 Low Voltage Audio Power Amplifier January 2000 LM386 Absolute Maximum Ratings (Note 2) Dual-In-Line Package Soldering (10 sec) +260˚C Small Outline Package (SOIC and MSOP) Vapor Phase (60 sec) +215˚C Infrared (15 sec) +220˚C See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices. Thermal Resistance 37˚C/W θJC (DIP) 107˚C/W θJA (DIP) 35˚C/W θJC (SO Package) 172˚C/W θJA (SO Package) 210˚C/W θJA (MSOP) 56˚C/W θJC (MSOP) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage (LM386N-1, -3, LM386M-1) Supply Voltage (LM386N-4) Package Dissipation (Note 3) (LM386N) (LM386M) (LM386MM-1) Input Voltage Storage Temperature Operating Temperature Junction Temperature Soldering Information 15V 22V 1.25W 0.73W 0.595W ± 0.4V −65˚C to +150˚C 0˚C to +70˚C +150˚C Electrical Characteristics (Notes 1, 2) TA = 25˚C Parameter Conditions Min Typ Max Units 12 V Operating Supply Voltage (VS) LM386N-1, -3, LM386M-1, LM386MM-1 4 LM386N-4 Quiescent Current (IQ) 5 VS = 6V, VIN = 0 4 18 V 8 mA Output Power (POUT) LM386N-4 VS = 6V, RL = 8Ω, THD = 10% VS = 9V, RL = 8Ω, THD = 10% VS = 16V, RL = 32Ω, THD = 10% Voltage Gain (AV) VS = 6V, f = 1 kHz LM386N-1, LM386M-1, LM386MM-1 LM386N-3 Bandwidth (BW) Total Harmonic Distortion (THD) Power Supply Rejection Ratio (PSRR) 10 µF from Pin 1 to 8 VS = 6V, Pins 1 and 8 Open VS = 6V, RL = 8Ω, POUT = 125 mW f = 1 kHz, Pins 1 and 8 Open VS = 6V, f = 1 kHz, CBYPASS = 10 µF 250 325 500 700 mW mW 700 1000 mW 26 dB 46 dB 300 kHz 0.2 % 50 dB 50 kΩ 250 nA Pins 1 and 8 Open, Referred to Output Input Resistance (RIN) Input Bias Current (IBIAS) VS = 6V, Pins 2 and 3 Open Note 1: All voltages are measured with respect to the ground pin, unless otherwise specified. Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good indication of device performance. Note 3: For operation in ambient temperatures above 25˚C, the device must be derated based on a 150˚C maximum junction temperature and 1) a thermal resistance of 107˚C/W junction to ambient for the dual-in-line package and 2) a thermal resistance of 170˚C/W for the small outline package. www.national.com 2 LM386 Application Hints GAIN CONTROL INPUT BIASING To make the LM386 a more versatile amplifier, two pins (1 and 8) are provided for gain control. With pins 1 and 8 open the 1.35 kΩ resistor sets the gain at 20 (26 dB). If a capacitor is put from pin 1 to 8, bypassing the 1.35 kΩ resistor, the gain will go up to 200 (46 dB). If a resistor is placed in series with the capacitor, the gain can be set to any value from 20 to 200. Gain control can also be done by capacitively coupling a resistor (or FET) from pin 1 to ground. Additional external components can be placed in parallel with the internal feedback resistors to tailor the gain and frequency response for individual applications. For example, we can compensate poor speaker bass response by frequency shaping the feedback path. This is done with a series RC from pin 1 to 5 (paralleling the internal 15 kΩ resistor). For 6 dB effective bass boost: R ≅ 15 kΩ, the lowest value for good stable operation is R = 10 kΩ if pin 8 is open. If pins 1 and 8 are bypassed then R as low as 2 kΩ can be used. This restriction is because the amplifier is only compensated for closed-loop gains greater than 9. The schematic shows that both inputs are biased to ground with a 50 kΩ resistor. The base current of the input transistors is about 250 nA, so the inputs are at about 12.5 mV when left open. If the dc source resistance driving the LM386 is higher than 250 kΩ it will contribute very little additional offset (about 2.5 mV at the input, 50 mV at the output). If the dc source resistance is less than 10 kΩ, then shorting the unused input to ground will keep the offset low (about 2.5 mV at the input, 50 mV at the output). For dc source resistances between these values we can eliminate excess offset by putting a resistor from the unused input to ground, equal in value to the dc source resistance. Of course all offset problems are eliminated if the input is capacitively coupled. When using the LM386 with higher gains (bypassing the 1.35 kΩ resistor between pins 1 and 8) it is necessary to bypass the unused input, preventing degradation of gain and possible instabilities. This is done with a 0.1 µF capacitor or a short to ground depending on the dc source resistance on the driven input. 3 www.national.com LM386 Typical Performance Characteristics Quiescent Supply Current vs Supply Voltage Power Supply Rejection Ratio (Referred to the Output) vs Frequency Peak-to-Peak Output Voltage Swing vs Supply Voltage DS006976-5 DS006976-13 DS006976-12 Voltage Gain vs Frequency Distortion vs Frequency DS006976-15 DS006976-14 Device Dissipation vs Output Power — 4Ω Load Device Dissipation vs Output Power — 8Ω Load DS006976-17 www.national.com Distortion vs Output Power DS006976-18 4 DS006976-16 Device Dissipation vs Output Power — 16Ω Load DS006976-19 LM386 Typical Applications Amplifier with Gain = 20 Minimum Parts Amplifier with Gain = 200 DS006976-4 DS006976-3 Amplifier with Gain = 50 Low Distortion Power Wienbridge Oscillator DS006976-6 DS006976-7 Amplifier with Bass Boost Square Wave Oscillator DS006976-8 DS006976-9 5 www.national.com LM386 Typical Applications (Continued) Frequency Response with Bass Boost DS006976-10 AM Radio Power Amplifier DS006976-11 Note 4: Twist Supply lead and supply ground very tightly. Note 5: Twist speaker lead and ground very tightly. Note 6: Ferrite bead in Ferroxcube K5-001-001/3B with 3 turns of wire. Note 7: R1C1 band limits input signals. Note 8: All components must be spaced very closely to IC. www.national.com 6 LM386 Physical Dimensions inches (millimeters) unless otherwise noted SO Package (M) Order Number LM386M-1 NS Package Number M08A 7 www.national.com LM386 Physical Dimensions inches (millimeters) unless otherwise noted (Continued) 8-Lead (0.118” Wide) Molded Mini Small Outline Package Order Number LM386MM-1 NS Package Number MUA08A www.national.com 8 LM386 Low Voltage Audio Power Amplifier Physical Dimensions inches (millimeters) unless otherwise noted (Continued) Dual-In-Line Package (N) Order Number LM386N-1, LM386N-3 or LM386N-4 NS Package Number N08E LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. National Semiconductor Corporation Americas Tel: 1-800-272-9959 Fax: 1-800-737-7018 Email: [email protected] www.national.com National Semiconductor Europe Fax: +49 (0) 1 80-530 85 86 Email: [email protected] Deutsch Tel: +49 (0) 1 80-530 85 85 English Tel: +49 (0) 1 80-532 78 32 Français Tel: +49 (0) 1 80-532 93 58 Italiano Tel: +49 (0) 1 80-534 16 80 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. National Semiconductor Asia Pacific Customer Response Group Tel: 65-2544466 Fax: 65-2504466 Email: [email protected] National Semiconductor Japan Ltd. Tel: 81-3-5639-7560 Fax: 81-3-5639-7507 National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications. LM741 Operational Amplifier General Description The LM741 series are general purpose operational amplifiers which feature improved performance over industry standards like the LM709. They are direct, plug-in replacements for the 709C, LM201, MC1439 and 748 in most applications. The amplifiers offer many features which make their application nearly foolproof: overload protection on the input and output, no latch-up when the common mode range is exceeded, as well as freedom from oscillations. The LM741C/LM741E are identical to the LM741/LM741A except that the LM741C/LM741E have their performance guaranteed over a 0˚C to +70˚C temperature range, instead of −55˚C to +125˚C. Schematic Diagram DS009341-1 Offset Nulling Circuit DS009341-7 © 1999 National Semiconductor Corporation DS009341 www.national.com LM741 Operational Amplifier May 1998 Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. (Note 6) LM741A LM741E LM741 LM741C ± 22V ± 22V ± 22V ± 18V Supply Voltage Power Dissipation (Note 2) 500 mW 500 mW 500 mW 500 mW ± 30V ± 30V ± 30V ± 30V Differential Input Voltage ± 15V ± 15V ± 15V ± 15V Input Voltage (Note 3) Output Short Circuit Duration Continuous Continuous Continuous Continuous Operating Temperature Range −55˚C to +125˚C 0˚C to +70˚C −55˚C to +125˚C 0˚C to +70˚C Storage Temperature Range −65˚C to +150˚C −65˚C to +150˚C −65˚C to +150˚C −65˚C to +150˚C Junction Temperature 150˚C 100˚C 150˚C 100˚C Soldering Information N-Package (10 seconds) 260˚C 260˚C 260˚C 260˚C J- or H-Package (10 seconds) 300˚C 300˚C 300˚C 300˚C M-Package Vapor Phase (60 seconds) 215˚C 215˚C 215˚C 215˚C Infrared (15 seconds) 215˚C 215˚C 215˚C 215˚C See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices. ESD Tolerance (Note 7) 400V 400V 400V 400V Electrical Characteristics (Note 4) Parameter Conditions LM741A/LM741E Min Input Offset Voltage Typ Max 0.8 3.0 LM741 Min LM741C Typ Max 1.0 5.0 Min Units Typ Max 2.0 6.0 TA = 25˚C RS ≤ 10 kΩ RS ≤ 50Ω mV mV TAMIN ≤ TA ≤ TAMAX RS ≤ 50Ω 4.0 mV RS ≤ 10 kΩ 6.0 Average Input Offset 7.5 15 mV µV/˚C Voltage Drift Input Offset Voltage TA = 25˚C, VS = ± 20V ± 10 ± 15 ± 15 mV Adjustment Range Input Offset Current TA = 25˚C 3.0 TAMIN ≤ TA ≤ TAMAX Average Input Offset 30 20 200 70 85 500 20 200 nA 300 nA 0.5 nA/˚C Current Drift Input Bias Current TA = 25˚C Input Resistance TAMIN ≤ TA ≤ TAMAX TA = 25˚C, VS = ± 20V TAMIN ≤ TA ≤ TAMAX, VS = ± 20V Input Voltage Range 30 1.0 80 6.0 500 80 1.5 0.3 2.0 0.3 2.0 0.5 500 nA 0.8 µA MΩ MΩ ± 12 TA = 25˚C TAMIN ≤ TA ≤ TAMAX www.national.com 80 0.210 ± 12 2 ± 13 ± 13 V V Electrical Characteristics (Note 4) Parameter (Continued) Conditions LM741A/LM741E Min Large Signal Voltage Gain TA = 25˚C, RL ≥ 2 kΩ VS = ± 20V, VO = ± 15V VS = ± 15V, VO = ± 10V Typ Max LM741 Min Typ 50 200 LM741C Max Min Typ 20 200 Units Max 50 V/mV V/mV TAMIN ≤ TA ≤ TAMAX, RL ≥ 2 kΩ, VS = ± 20V, VO = ± 15V VS = ± 15V, VO = ± 10V VS = ± 5V, VO = ± 2V Output Voltage Swing 32 V/mV 25 RL ≥ 10 kΩ 10 V/mV ± 16 ± 15 V V RL ≥ 10 kΩ ± 12 ± 10 RL ≥ 2 kΩ TA = 25˚C 10 Current TAMIN ≤ TA ≤ TAMAX 10 Common-Mode TAMIN ≤ TA ≤ TAMAX RS ≤ 10 kΩ, VCM = ± 12V Rejection Ratio RS ≤ 50Ω, VCM = ± 12V Supply Voltage Rejection Ratio 25 35 ± 14 ± 13 ± 12 ± 10 25 ± 14 ± 13 V 25 mA 40 mA 70 80 95 86 96 90 70 90 dB RS ≤ 10 kΩ TA = 25˚C, Unity Gain 77 96 77 96 dB µs 0.25 0.8 0.3 0.3 Overshoot 6.0 20 5 5 Slew Rate Supply Current Power Consumption LM741A dB dB Rise Time Bandwidth (Note 5) V TAMIN ≤ TA ≤ TAMAX, VS = ± 20V to VS = ± 5V RS ≤ 50Ω Transient Response V/mV VS = ± 20V RL ≥ 2 kΩ VS = ± 15V Output Short Circuit 15 TA = 25˚C TA = 25˚C, Unity Gain TA = 25˚C 0.437 1.5 0.3 0.7 TA = 25˚C VS = ± 20V VS = ± 15V 80 VS = ± 20V TA = TAMIN % MHz 0.5 0.5 V/µs 1.7 2.8 1.7 2.8 50 85 50 85 150 mA mW mW 165 mW 135 mW LM741E TA = TAMAX VS = ± 20V TA = TAMIN 150 mW 150 mW LM741 TA = TAMAX VS = ± 15V TA = TAMIN TA = TAMAX 60 100 mW 45 75 mW Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. 3 www.national.com Electrical Characteristics (Note 4) (Continued) Note 2: For operation at elevated temperatures, these devices must be derated based on thermal resistance, and Tj max. (listed under “Absolute Maximum Ratings”). Tj = TA + (θjA PD). Thermal Resistance θjA (Junction to Ambient) θjC (Junction to Case) Cerdip (J) DIP (N) HO8 (H) SO-8 (M) 100˚C/W 100˚C/W 170˚C/W 195˚C/W N/A N/A 25˚C/W N/A Note 3: For supply voltages less than ± 15V, the absolute maximum input voltage is equal to the supply voltage. Note 4: Unless otherwise specified, these specifications apply for VS = ± 15V, −55˚C ≤ TA ≤ +125˚C (LM741/LM741A). For the LM741C/LM741E, these specifications are limited to 0˚C ≤ TA ≤ +70˚C. Note 5: Calculated value from: BW (MHz) = 0.35/Rise Time(µs). Note 6: For military specifications see RETS741X for LM741 and RETS741AX for LM741A. Note 7: Human body model, 1.5 kΩ in series with 100 pF. Connection Diagram Metal Can Package Ceramic Dual-In-Line Package DS009341-2 Note 8: LM741H is available per JM38510/10101 DS009341-5 Order Number LM741H, LM741H/883 (Note 8), LM741AH/883 or LM741CH See NS Package Number H08C Note 9: also available per JM38510/10101 Note 10: also available per JM38510/10102 Order Number LM741J-14/883 (Note 9), LM741AJ-14/883 (Note 10) See NS Package Number J14A Dual-In-Line or S.O. Package Ceramic Flatpak DS009341-6 DS009341-3 Order Number LM741W/883 See NS Package Number W10A Order Number LM741J, LM741J/883, LM741CM, LM741CN or LM741EN See NS Package Number J08A, M08A or N08E www.national.com 4 Physical Dimensions inches (millimeters) unless otherwise noted Metal Can Package (H) Order Number LM741H, LM741H/883, LM741AH/883, LM741CH or LM741EH NS Package Number H08C Ceramic Dual-In-Line Package (J) Order Number LM741CJ or LM741J/883 NS Package Number J08A 5 www.national.com Physical Dimensions inches (millimeters) unless otherwise noted (Continued) Ceramic Dual-In-Line Package (J) Order Number LM741J-14/883 or LM741AJ-14/883 NS Package Number J14A Small Outline Package (M) Order Number LM741CM NS Package Number M08A www.national.com 6 Physical Dimensions inches (millimeters) unless otherwise noted (Continued) Dual-In-Line Package (N) Order Number LM741CN or LM741EN NS Package Number N08E 7 www.national.com LM741 Operational Amplifier Physical Dimensions inches (millimeters) unless otherwise noted (Continued) 10-Lead Ceramic Flatpak (W) Order Number LM741W/883 NS Package Number W10A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. National Semiconductor Corporation Americas Tel: 1-800-272-9959 Fax: 1-800-737-7018 Email: [email protected] www.national.com National Semiconductor Europe Fax: +49 (0) 1 80-530 85 86 Email: [email protected] Deutsch Tel: +49 (0) 1 80-530 85 85 English Tel: +49 (0) 1 80-532 78 32 Français Tel: +49 (0) 1 80-532 93 58 Italiano Tel: +49 (0) 1 80-534 16 80 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. National Semiconductor Asia Pacific Customer Response Group Tel: 65-2544466 Fax: 65-2504466 Email: [email protected] National Semiconductor Japan Ltd. Tel: 81-3-5639-7560 Fax: 81-3-5639-7507 National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications. LM1596/LM1496 Balanced Modulator-Demodulator General Description Features The LM1596/LM1496 are doubled balanced modulator-demodulators which produce an output voltage proportional to the product of an input (signal) voltage and a switching (carrier) signal. Typical applications include suppressed carrier modulation, amplitude modulation, synchronous detection, FM or PM detection, broadband frequency doubling and chopping. The LM1596 is specified for operation over the b55§ C to a 125§ C military temperature range. The LM1496 is specified for operation over the 0§ C to a 70§ C temperature range. Y Y Y Y Y Excellent carrier suppression 65 dB typical at 0.5 MHz 50 dB typical at 10 MHz Adjustable gain and signal handling Fully balanced inputs and outputs Low offset and drift Wide frequency response up to 100 MHz Schematic and Connection Diagrams Metal Can Package TL/H/7887 – 2 Top View Note: Pin 10 is connected electrically to the case through the device substrate. Order Number LM1496H or LM1596H See NS Package Number H08C TL/H/7887 – 1 Dual-In-Line and Small Outline Packages Numbers in parentheses show DIP connections. TL/H/7887 – 3 Order Number LM1496M or LM1496N See NS Package Number M14A or N14A C1995 National Semiconductor Corporation TL/H/7887 RRD-B30M115/Printed in U. S. A. LM1596/LM1496 Balanced Modulator-Demodulator February 1995 Absolute Maximum Ratings Soldering Information If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Internal Power Dissipation (Note 1) Applied Voltage (Note 2) Differential Input Signal (V7 b V8) # Dual-In-Line Package # Small Outline Package Vapor Phase (60 seconds) 215§ C Infrared (15 seconds) 220§ C See AN-450 ‘‘Surface Mounting Methods and their effects on Product Reliability’’ for other methods of soldering surface mount devices. g 5.0V g (5 a I5R0)V Differential Input Signal (V4 b V1) 5.0V Input Signal (V2 b V1, V3 b V4) 12 mA Bias Current (I5) Operating Temperature Range LM1596 b55§ C to a 125§ C LM1496 0§ C to a 70§ C Storage Temperature Range 260§ C Soldering (10 seconds) 500 mW 30V b 65§ C to a 150§ C Electrical Characteristics (TA e 25§ C, unless otherwise specified, see test circuit) Parameter LM1596 Conditions LM1496 Units Min Typ Max Min Typ Max Carrier Feedthrough Carrier Suppression Transadmittance Bandwidth VC e 60 mVrms sine wave fC e 1.0 kHz, offset adjusted VC e 60 mVrms sine wave fC e 10 kHz, offset adjusted VC e 300 mVpp square wave fC e 1.0 kHz, offset adjusted VC e 300 mVpp square wave fC e 1.0 kHz, not offset adjusted fS e 10 kHz, 300 mVrms fC e 500 kHz, 60 mVrms sine wave offset adjusted fS e 10 kHz, 300 mVrms fC e 10 MHz, 60 mVrms sine wave offset adjusted 50 RL e 50X Carrier Input Port, VC e 60 mVrms sine wave fS e 1.0 kHz, 300 mVrms sine wave Signal Input Port, VS e 300 mVrms sine wave V7 b V8 e 0.5Vdc 40 40 mVrms 140 140 mVrms 0.04 0.2 0.04 0.2 mVrms 20 100 20 150 mVrms 65 50 65 dB 50 50 dB 300 300 MHz 80 80 MHz 3.5 V/V Voltage Gain, Signal Channel VS e 100 mVrms, f e 1.0 kHz V7 b V8 e 0.5 Vdc Input Resistance, Signal Port f e 5.0 MHz V7 b V8 e 0.5 Vdc 200 200 kX Input Capacitance, Signal Port f e 5.0 MHz V7 b V8 e 0.5 Vdc 2.0 2.0 pF Single Ended Output Resistance f e 10 MHz 40 40 kX Single Ended Output Capacitance f e 10 MHz 5.0 5.0 pF Input Bias Current (I1 a I4)/2 12 25 12 30 Input Bias Current (I7 a I8)/2 12 25 12 30 mA Input Offset Current (I1 b I4) 0.7 5.0 0.7 5.0 mA Input Offset Current (I7 b I8) 0.7 5.0 5.0 5.0 Average Temperature Coefficient of Input Offset Current (b55§ C k TA k a 125§ C) (0§ C k TA k a 70§ C) 2.0 Output Offset Current (I6 b I9) 14 Average Temperature Coefficient of Output Offset Current (b55§ C k TA k a 125§ C) (0§ C k TA k a 70§ C) 90 2.5 3.5 2.5 14 90 2 mA nA/§ C nA/§ C 2.0 50 mA 60 mA nA/§ C nA/§ C Electrical Characteristics (TA e 25§ C, unless otherwise specified, see test circuit) (Continued) Parameter LM1596 Conditions Min Signal Port Common Mode Input Voltage Range fS e 1.0 kHz Signal Port Common Mode Rejection Ratio V7 b V8 e 0.5 Vdc Typ LM1496 Max Min Typ Units Max 5.0 5.0 Vp-p b 85 b 85 dB Common Mode Quiescent Output Voltage 8.0 8.0 Vdc Differential Output Swing Capability 8.0 8.0 Vp-p Positive Supply Current Negative Supply Current (I6 a Ig) (I10) Power Dissipation 2.0 3.0 2.0 3.0 mA 3.0 4.0 3.0 4.0 mA 33 33 mW Note 1: LM1596 rating applies to case temperatures to a 125§ C; derate linearly at 6.5 mW/§ C for ambient temperature above 75§ C. LM1496 rating applies to case temperatures to a 70§ C. Note 2: Voltage applied between pins 6-7, 8-1, 9-7, 9-8, 7-4, 7-1, 8-4, 6-8, 2-5, 3-5. Note 3: Refer to rets1596x drawing for specifications of military LM1596H versions. Typical Performance Characteristics Carrier Suppression vs Carrier Input Level Carrier Suppression vs Frequency Carrier Feedthrough vs Frequency Sideband Output vs Carrier Levels Sideband and Signal Port Transadmittances vs Frequency Signal-Port Frequency Response TL/H/7887 – 5 3 Typical Application and Test Circuit Suppressed Carrier Modulator Numbers in parentheses show DIP connections. TL/H/7887 – 4 Note: S1 is closed for ‘‘adjusted’’ measurements. SSB Product Detector Numbers in parentheses show DIP connections. TL/H/7887 – 6 This figure shows the LM1596 used as a single sideband (SSB) suppressed carrier demodulator (product detector). The carrier signal is applied to the carrier input port with sufficient amplitude for switching operation. A carrier input level of 300 mVrms is optimum. The composite SSB signal is applied to the signal input port with an amplitude of 5.0 to 500 mVrms. All output signal components except the desired demodulated audio are filtered out, so that an offset adjustment is not required. This circuit may also be used as an AM detector by applying composite and carrier signals in the same manner as described for product detector operation. 4 Typical Applications (Continued) Broadband Frequency Doubler Numbers in parentheses show DIP connections. TL/H/7887 – 7 The frequency doubler circuit shown will double low-level signals with low distortion. The value of C should be chosen for low reactance at the operating frequency. Signal level at the carrier input must be less than 25 mV peak to maintain operation in the linear region of the switching differential amplifier. Levels to 50 mV peak may be used with some distortion of the output waveform. If a larger input signal is available a resistive divider may be used at the carrier input, with full signal applied to the signal input. 5 6 Physical Dimensions inches (millimeters) Metal Can Package (H) Order Number LM1496H or LM1596H NS Package Number H08C Molded Small Outline Package (M) Order Number LM1496M NS Package Number M14A 7 LM1596/LM1496 Balanced Modulator-Demodulator Physical Dimensions inches (millimeters) (Continued) Molded Dual-In-Line Package (N) Order Number LM1496N NS Package Number N14A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. National Semiconductor Corporation 1111 West Bardin Road Arlington, TX 76017 Tel: 1(800) 272-9959 Fax: 1(800) 737-7018 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. National Semiconductor Europe Fax: (a49) 0-180-530 85 86 Email: cnjwge @ tevm2.nsc.com Deutsch Tel: (a49) 0-180-530 85 85 English Tel: (a49) 0-180-532 78 32 Fran3ais Tel: (a49) 0-180-532 93 58 Italiano Tel: (a49) 0-180-534 16 80 National Semiconductor Hong Kong Ltd. 13th Floor, Straight Block, Ocean Centre, 5 Canton Rd. Tsimshatsui, Kowloon Hong Kong Tel: (852) 2737-1600 Fax: (852) 2736-9960 National Semiconductor Japan Ltd. Tel: 81-043-299-2309 Fax: 81-043-299-2408 National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications. Transistor 2SC829 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm ■ Features Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 +0.2 0.45 –0.1 0.45 –0.1 1.27 1.27 2.3±0.2 ■ Absolute Maximum Ratings 13.5±0.5 ● 4.0±0.2 5.1±0.2 5.0±0.2 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 30 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 Forward current transfer ratio hFE* VCE = 10V, IC = 1mA 70 150 Transition frequency fT VCB = 10V, IC = 1mA, f = 200MHz Common emitter reverse transfer capacitance Cre VCE = 10V, IC = 1mA, f = 10.7MHz Reverse transfer impedance Zrb VCB = 10V, IE = –1mA, f = 2MHz *h FE V 250 230 1.3 MHz 1.6 pF 60 Ω Rank classification Rank B C hFE 70 ~ 160 110 ~ 250 1 Transistor 2SC829 PC — Ta IC — VCE 60 IB=100µA 350 300 250 200 150 100 80µA 8 60µA 6 40µA 4 20µA 2 40 25˚C 30 Ta=75˚C –25˚C 20 10 50 0 60 80 100 120 140 160 0 0 6 Collector to emitter saturation voltage VCE(sat) (V) VCE=10V Ta=25˚C 100 80 60 40 20 0 1.2 1.8 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 –25˚C 0.03 0.01 0.1 0.3 1 3 fT — IE 10 30 Reverse transfer impedance Zrb (Ω) 400 VCB=10V 6V 200 100 –1 –3 –10 –30 Emitter current IE (mA) –100 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 0.1 0.3 60 50 40 VCB=6V 10V 20 10 – 0.3 –1 1 3 10 30 100 Cre — VCE 70 0 – 0.1 2.0 Collector current IC (mA) f=2MHz Ta=25˚C 30 1.6 250 Zrb — IE 500 1.2 VCE=10V 100 80 Ta=25˚C 0.8 300 IB/IB=10 Collector current IC (mA) 600 0 – 0.1 – 0.3 0.4 Base to emitter voltage VBE (V) hFE — IC 100 Base to emitter voltage VBE (V) 300 0 VCE(sat) — IC 120 0.6 18 Collector to emitter voltage VCE (V) IB — VBE 0 12 Forward current transfer ratio hFE 40 –3 Emitter current IE (mA) –10 Common emitter reverse transfer capacitance Cre (pF) 20 Ambient temperature Ta (˚C) Base current IB (µA) 50 Collector current IC (mA) 10 400 0 Transition frequency fT (MHz) VCE=10V Ta=25˚C 450 0 2 IC — VBE 12 Collector current IC (mA) Collector power dissipation PC (mW) 500 2.4 IC=1mA f=10.7MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 2SC829 Transistor Cob — VCB bie — gie 1.0 0.8 0.6 0.4 Reverse transfer susceptance bre (mS) 1.2 0 yie=gie+jbie VCE=10V Input susceptance bie (mS) Collector output capacitance Cob (pF) IE=–1mA f=1MHz Ta=25˚C 1.4 100 10 6 25 4 10.7 IE=– 0.4mA –1mA –2mA –4mA –7mA 2 f=0.45MHz 0 1 3 10 30 0 100 Collector to base voltage VCB (V) 4 100 58 –1mA –4mA 25 58 100 –40 100 58 f=10.7MHz 25 –60 58 IE=–7mA –80 –100 1.0 0.8 58 25 40 60 –4mA –2.0 –2.5 –3.0 – 0.5 100 IE=–7mA – 0.4 – 0.3 – 0.2 – 0.1 0 Reverse transfer conductance gre (mS) 80 Forward transfer conductance 100 gfe (mS) –7mA –4mA –2mA –1mA IE=– 0.1mA 0.4 10.7 0.2 yoe=goe+jboe VCE=10V f=0.45MHz 0 20 –2mA – 0.4mA 0.6 yfe=gfe+jbfe VCE=10V –120 0 –1.5 100 10.7 –2mA 100 20 – 0.4mA –1mA 1.2 0.45 Output susceptance boe (mS) – 0.1mA –20 25 16 58 –1.0 boe — goe 0.45 10.7 –0.4mA 12 Input conductance gie (mS) bfe — gfe 0 8 f=0.45MHz 10.7 25 yre=gre+jbre VCE=10V – 0.5 58 8 0.2 0 Forward transfer susceptance bfe (mS) bre — gre 12 1.6 0 0.2 0.4 0.6 0.8 1.0 Output conductance goe (mS) 3 2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5 V Collector current IC 2.5 A Collector peak current I C(peak) 3 A Collector power dissipation PC 0.75 W 10 W PC * 1 Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C. 2SC1162 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 35 — — V I C = 1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 35 — — V I C = 10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V I E = 1 mA, IC = 0 Collector cutoff current I CBO — — 20 µA VCB = 35 V, IE = 0 60 — 320 VCE = 2 V, IC = 0.5 A hFE 20 — — VCE = 2 V, IC = 1.5 A (pulse test) Base to emitter voltage VBE — 0.93 1.5 V VCE = 2 V, IC = 1.5 A (pulse test) Collector to emitter saturation voltage VCE(sat) — 0.5 1.0 V I C = 2 A, IB = 0.2 A (pulse test) Gain bandwidth product fT — 180 — MHz VCE = 2 V, IC = 0.2 A DC current transfer ratio Note: hFE* 1 1. The 2SC1162 is grouped by h FE as follows. B C D 60 to 120 100 to 200 160 to 320 Maximum Collector Dissipation Curve Area of Safe Operation 5 0.75 TC = 25°C 0.6 1.0 W 0.2 10 0.4 2 = Collector current IC (A) IC(max)(DC Operation) PC Collector power dissipation PC (W) 0.8 0.5 0.2 0.1 0 2 50 100 150 Ambient temperature Ta (°C) 200 1 5 20 50 2 10 Collector to emitter voltage VCE (V) 2SC1162 Typical Output Characteristics Maximum Collector Dissipation Curve 16 TC = 25°C Collector current IC (A) Collector power dissipation PC (W) 2.0 12 8 4 17 1.6 15 1.2 12 10 0.8 8 6 4 0.4 50 100 150 200 Case temperature TC (°C) 0 1 3 4 2 5 Collector to emitter voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 2.0 280 Collector Current IC (A) 1.0 0.5 25 TC = 75°C –25 0.1 0.05 0.02 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base to emitter voltage VBE (V) DC current transfer ratio hFE VCE = 2 V 0 20 2 mA IB = 0 0 0.2 24 240 VCE = 2 V 200 160 TC = 75°C 120 80 25 –25 40 0 0.01 0.3 0.03 0.1 1.0 Collector current IC (A) 3.0 3 Unit: mm 2.7 ± 0.4 120° 3.7 ± 0.7 11.0 ± 0.5 12 0° 2.3 ± 0.3 φ 3.1 +0.15 –0.1 12 0° 8.0 ± 0.5 15.6 ± 0.5 1.1 0.8 2.29 ± 0.5 2.29 ± 0.5 0.55 1.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-126 Mod — — 0.67 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA683 and 2SA684 Unit: mm 5.9±0.2 4.9±0.2 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684. Parameter 2SC1383 base voltage 2SC1384 Collector to 2SC1383 Ratings 30 VCBO 25 V 50 +0.2 VEBO 5 V Peak collector current ICP 1.5 A Collector current IC 1 A Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ICBO 2SC1383 voltage 2SC1384 Collector to emitter 2SC1383 voltage 2SC1384 Emitter to base voltage Conditions 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package min typ VCB = 20V, IE = 0 VCBO IC = 10µA, IE = 0 VCEO IC = 2mA, IB = 0 VEBO IE = 10µA, IC = 0 hFE1 Forward current transfer ratio 1.27 (Ta=25˚C) Symbol Collector to base 0.45–0.1 1.27 1 Parameter Collector cutoff current +0.2 0.45–0.1 Emitter to base voltage ■ Electrical Characteristics 2.54±0.15 Unit V 60 VCEO emitter voltage 2SC1384 +0.3 (Ta=25˚C) Symbol Collector to 0.7–0.2 0.7±0.1 ■ Absolute Maximum Ratings 13.5±0.5 ● 3.2 ● 8.6±0.2 ■ Features *1 VCE = 10V, IC = 500mA*2 max Unit 0.1 µA 30 V 60 25 V 50 5 V 85 160 50 100 340 hFE2 VCE = 5V, IB = 1A*2 Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA*2 0.2 0.4 V Base to emitter saturation voltage VBE(sat) IC = 500mA, IB = 50mA*2 0.85 1.2 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 200 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 11 MHz 20 *2 *1h FE1 pF Pulse measurement Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 1 2SC1383, 2SC1384 Transistor PC — Ta IC — VCE 1.2 IC — I B 1.5 1.2 1.25 0.8 0.6 0.4 0.2 8mA 1.0 7mA 6mA 0.75 5mA 4mA 3mA 0.5 2mA 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 3 3 25˚C 75˚C 0.3 0.1 0.03 0.3 140 120 100 80 60 40 20 1 3 Emitter current IE (mA) –100 8 10 12 500 400 300 Ta=75˚C 200 25˚C –25˚C 100 0 0.01 0.03 10 0.1 0.3 1 3 10 Collector current IC (A) VCER — RBE 120 IE=0 f=1MHz Ta=25˚C 45 40 35 30 25 20 15 10 5 0 –30 6 VCE=10V Cob — VCB Collector output capacitance Cob (pF) Transition frequency fT (MHz) Ta=–25˚C 1 0.1 4 600 50 –10 2 Base current IB (mA) Collector current IC (A) VCB=10V Ta=25˚C –3 0 hFE — IC 10 0.01 0.01 0.03 10 160 0 –1 10 30 fT — IE 180 8 IC/IB=10 Collector current IC (A) 200 6 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 3 0.1 4 VBE(sat) — IC IC/IB=10 0.3 0.4 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 0.6 0 0 Forward current transfer ratio hFE 40 1 3 10 30 100 Collector to base voltage VCB (V) Collector to emitter voltage VCER (V) 20 0.8 0.2 1mA 0 0 2 1.0 IB=10mA 9mA 0.25 0 VCE=10V Ta=25˚C Collector current IC (A) 1.0 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C IC=10mA Ta=25˚C 100 80 60 2SC1384 40 2SC1383 20 0 0.1 0.3 1 3 10 30 100 Base to emitter resistance RBE (kΩ) 2SC1383, 2SC1384 Transistor ICEO — Ta 104 Area of safe operation (ASO) 10 VCE=10V Single pulse Ta=25˚C 3 10 IC t=10ms 0.3 t=1s 0.1 0.03 0.01 0.003 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0.001 0.1 0.3 1 3 10 2SC1384 ICEO (Ta) ICEO (Ta=25˚C) 102 1 2SC1383 Collector current IC (A) ICP 103 30 100 Collector to emitter voltage VCE (V) 3