Survey
* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project
* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project
BCR162 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7kΩ , R2 = 4.7kΩ ) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BDTIC BCR162 C 3 R1 R2 1 B 2 E EHA07183 Type Marking BCR162 WUs Pin Configuration 1=B 2=E 2=C - - Package - SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Input forward voltage Vi(fwd) 30 Input reverse voltage Vi(rev) 10 Collector current IC 100 mA Total power dissipation- Ptot 200 mW Junction temperature Tj 150 °C Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value Unit V TS ≤ 102°C 1 -65 ... 150 Value ≤ 240 www.BDTIC.com/infineon Unit K/W 2011-08-29 BCR162 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 Unit V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 - - - - 100 IC = 10 µA, IE = 0 Collector-base cutoff current ICBO nA VCB = 40 V, IE = 0 BDTIC Emitter-base cutoff current IEBO - - 1.61 mA hFE 20 - - - - - 0.3 V Vi(off) 0.8 - 1.5 Vi(on) 1 - 2.5 VEB = 10 V, IC = 0 DC current gain2) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage2) VCEsat IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.3 V Input resistor R1 3.2 4.7 6.2 kΩ Resistor ratio R1/R2 0.9 1 1.1 - fT - 200 - MHz Ccb - 3 - pF AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2Pulse test: t < 300µs; D < 2% 2 www.BDTIC.com/infineon 2011-08-29 BCR162 DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) Collector-emitter saturation voltage VCEsat = ƒ(IC ), IC/IB = 20 10 3 0.5 V 0.4 VCEsat hFE -40 °C -25 °C 25 °C 85 °C 125 °C 10 2 0.35 0.3 -40 °C -25 °C 25 °C 85 °C 125 °C BDTIC 0.25 0.2 10 1 0.15 0.1 0.05 10 0 -4 10 10 -3 10 -2 A 10 0 -3 10 -1 -2 10 A 10 IC IC Input on Voltage Vi (on) = ƒ(IC) VCE = 0.3V (common emitter configuration) Input off voltage Vi(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 1 10 2 V -40 °C -25 °C 25 °C 85 °C 125 °C Vi(off) Vi(on) V 10 1 -1 -40 °C -25 °C 25 °C 85 °C 125 °C 10 0 10 0 10 -1 -5 10 10 -4 10 -3 10 -2 A 10 10 -1 -5 10 -1 10 -4 10 -3 IC 10 -2 A 10 -1 IC 3 www.BDTIC.com/infineon 2011-08-29 BCR162 Total power dissipation P tot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(tp) BCR162 BCR162 10 3 300 mW K/W 250 10 2 RthJS Ptot 225 200 175 BDTIC 10 1 150 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 125 100 10 0 75 50 25 0 0 15 30 45 60 90 105 120 °C 75 10 -1 -6 10 150 10 -5 10 -4 10 -3 TS 10 -2 s 10 0 tp Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) BCR162 Ptotmax / PtotDC 10 3 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 www.BDTIC.com/infineon 2011-08-29 Package SOT23 BCR162 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A BDTIC 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 5 www.BDTIC.com/infineon 2011-08-29 BCR162 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer BDTIC The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 www.BDTIC.com/infineon 2011-08-29