Download MJD112 MJD1 12 NPN

MJD112
tm
NPN Silicon Darlington Transistor
Features
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
Equivalent Circuit
C
B
D-PAK
1
1.Base
2.Collector
R1
3.Emitter
R2
R1 ≅ 10kΩ
R2 ≅ 0.6kΩ
Absolute Maximum Ratings*
Symbol
E
Ta = 25°C unless otherwise noted
Value
Units
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
2
A
ICP
Collector Current (Pulse)
4
A
IB
Base Current
50
mA
PC
Parameter
Collector Dissipation (TC=25°C)
20
W
Collector Dissipation (Ta=25°C)
1.75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Max.
Units
µA
VCEO(sus)
Collector-Emitter Sustaining Voltage
IC = 30mA, IB = 0
ICEO
Collector Cut-off Current
VCE = 50V, IB = 0
100
20
ICBO
Collector Cut-off Current
VCB = 100V, IB = 0
20
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
2
mA
hFE
* DC Current Gain
VCE = 3V, IC = 0.5A
VCE = 3V, IC = 2A
VCE = 3V, IC = 4A
500
1000
200
V
12K
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 2A, IB = 8mA
IC = 4A, IB = 40mA
VBE(sat)
* Base-Emitter Saturation Voltage
IC = 4A, IB = 40mA
4
V
VBE(on)
* Base-Emitter On Voltage
VCE = 3A, IC = 2A
2.8
V
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.75A
Cob
Output Capacitance
VCB = 10V, IE = 0
f = 0.1MHz
2
3
25
V
V
MHz
100
pF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
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©2006 Fairchild Semiconductor Corporation
MJD112 Rev. B
1
www.fairchildsemi.com
MJD112 NPN Silicon Darlington Transistor
November 2006
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10000
hFE, DC CURRENT GAIN
VCE = 3V
1000
100
10
0.01
0.1
1
10
10
IC = 250 IB
VBE(sat)
1
VCE(sat)
0.1
0.01
0.01
IC[A], COLLECTOR CURRENT
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
10
tR,tD(µs), TURN ON TIME
Cob[pF], CAPACITANCE
VCC=30V
IC=250IB
100
10
1
tR
tD
1
0.1
1
10
0.1
0.01
100
Figure 3. Collector Output Capacitance
10
10
tSTG
1
tF
s
0µ
IC[A], COLLECTOR CURRENT
10
VCC=30V
IC=250IB
tSTG,tF[µS], TURN OFF TIME
1
Figure 4. Turn On Time
10
0.1
0.01
0.1
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
1
DC
1
5m ms
s
0.1
0.01
0.1
1
1
10
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
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MJD112 Rev. B
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MJD112 NPN Silicon Darlington Transistor
Typical Characteristics
MJD112 NPN Silicon Darlington Transistor
Typical Characteristics
(Continued)
PC[W], POWER DISSIPATION
25
20
15
10
5
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 1. Power Derating
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MJD112 Rev. B
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MJD112 NPN Silicon Darlington Transistor
Mechanical Dimensions
D-PAK
MIN0.55
0.91 ±0.10
0.50 ±0.10
0.89 ±0.10
6.10 ±0.20
2.30 ±0.10
0.76 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30TYP
[2.30±0.20]
(1.00)
(3.05)
(2XR0.25)
(0.10)
6.10 ±0.20
2.70 ±0.20
9.50 ±0.30
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(0.90)
2.30 ±0.20
(0.70)
2.30TYP
[2.30±0.20]
(0.50)
2.70 ±0.20
0.60 ±0.20
0.80 ±0.20
MAX0.96
(4.34)
9.50 ±0.30
5.34 ±0.30
(0.50)
0.70 ±0.20
6.60 ±0.20
0.76 ±0.10
Dimensions in Millimeters
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MJD112 Rev. B
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(c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I21
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MJD112 Rev. B
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MJD112 NPN Silicon Darlington Transistor
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