Download FQD4P25TM_WS P-Channel QFET MOSFET -250 V, -3.1 A, 2.1 Ω

FQD4P25TM_WS
P-Channel QFET® MOSFET
-250 V, -3.1 A, 2.1 Ω
Description
Features
This P-Channel enhancement mode power MOSFET is •
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
•
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance •
and high avalanche energy strength. These devices are •
suitable for switched mode power supplies, audio amplifier,
•
DC motor control, and variable switching power applications.
•
-3.1 A, -250 V, RDS(on) = 2.1 Ω (Max.) @ VGS = 10 V,
ID = -1.55 A
Low Gate Charge (Typ. 10 nC)
Low Crss (Typ. 10.3 pF)
100% Avalanche Tested
Improved dv/dt Capability
RoHS Compliant
S
D
G
G
S
D-PAK
D
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQD4P25TM_WS
-250
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
(Note 1)
A
V
mJ
Avalanche Current
(Note 1)
-3.1
A
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
(Note 1)
4.5
-5.5
2.5
mJ
V/ns
W
45
0.36
-55 to +150
W
W/°C
°C
300
°C
IAR
EAR
(Note 3)
Power Dissipation (TC = 25°C)
TL
-12.4
280
Single Pulsed Avalanche Energy
TJ, TSTG
A
A
± 30
Gate-Source Voltage
EAS
PD
-3.1
-1.96
(Note 2)
VGSS
dv/dt
Unit
V
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
FQD4P25TM_WS
2.78
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
2
Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max.
©2011 Fairchild Semiconductor Corporation
FQD4P25TM_WS Rev. C0
Unit
1
110
oC/W
50
www.fairchildsemi.com
FQD4P25TM_WS — P-Channel QFET® MOSFET
November 2013
Part Number
Electrical Characteristics
Symbol
Package
DPAK
Top Mark
FQD4P25S
FQD4P25TM_WS
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
TC = 25°C unless otherwise noted.
Test Conditions
Parameter
Min.
Typ.
Max.
Unit
-250
--
--
V
--
-0.21
--
V/°C
µA
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = -250 V, VGS = 0 V
--
--
-1
VDS = -200 V, TC = 125°C
--
--
-10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = -30 V, VDS = 0 V
--
--
-100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = 30 V, VDS = 0 V
--
--
100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
-3.0
--
-5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -1.55 A
--
1.63
2.1
Ω
gFS
Forward Transconductance
VDS = -40 V, ID = -1.55 A
--
2.0
--
S
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
--
325
420
pF
--
65
85
pF
--
10
13
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -125 V, ID = -4.0 A,
RG = 25 Ω
(Note 4)
VDS = -200 V, ID = -4.0 A,
VGS = -10 V
(Note 4)
--
9.5
30
ns
--
60
130
ns
--
14
40
ns
--
27
65
ns
--
10.3
14
nC
--
2.7
--
nC
--
5.2
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-3.1
A
ISM
--
--
-12.4
A
--
--
-5.0
V
VGS = 0 V, IS = -4.0 A,
dIF / dt = 100 A/µs
--
140
--
ns
--
0.64
--
µC
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -3.1 A
Drain-Source Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Notes:
1. Repetitive rating : pulse-width limited by maximum Hunction temperature.
2. L = 46.6 mH, IAS = -3.1 A, VDD = -50V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ -4.0 A, diVdt≤ 300 AVµs, VDD ≤ BVDSS, starting TJ = 25°C .
4. Essentially independent of operating temperature.
©2011 Fairchild Semiconductor Corporation
FQD4P25TM_WS Rev. C0
2
www.fairchildsemi.com
FQD4P25TM_WS — P-Channel QFET® MOSFET
Package Marking and Ordering Information
1
10
VGS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V
1
10
0
10
-ID , Drain Current [A]
-ID, Drain Current [A]
Top :
-1
10
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
150℃
25℃
※ Notes :
1. VDS = -50V
2. 250µ s Pulse Test
-55℃
-2
10
0
10
-1
-1
0
10
10
1
10
2
10
4
6
8
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
8
1
6
-IDR , Reverse Drain Current [A]
RDS(on) [Ω],
Drain-Source On-Resistance
10
VGS = - 10V
VGS = - 20V
4
2
※ Note : TJ = 25℃
0
150℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
25℃
-1
0
3
6
9
10
12
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
700
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VDS = -50V
-VGS, Gate-Source Voltage [V]
600
500
Capacitance [pF]
0
10
Ciss
400
Coss
300
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
200
Crss
100
0
-1
10
10
VDS = -125V
VDS = -200V
8
6
4
2
※ Note : ID = -4.0 A
0
0
10
0
1
10
Figure 5. Capacitance Characteristics
©2011 Fairchild Semiconductor Corporation
FQD4P25TM_WS Rev. C0
2
4
6
8
10
12
QG, Total Gate Charge [nC]
-VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
3
www.fairchildsemi.com
FQD4P25TM_WS — P-Channel QFET® MOSFET
Typical Characteristics
(Continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
-BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
※ Note :
1. VGS = 0 V
2. ID = -250 µA
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = -10 V
2. ID = -2.0 A
0.5
0.0
-100
200
-50
o
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.5
Operation in This Area
is Limited by R DS(on)
3.0
1
100 µs
-ID, Drain Current [A]
-ID, Drain Current [A]
10
1 ms
10 ms
DC
0
10
※ Notes :
2.5
2.0
1.5
1.0
o
1. TC = 25 C
0.5
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
1
10
0.0
25
2
10
10
50
Figure 9. Maximum Safe Operating Area
ZJC(t), Thermal Response [oC/W]
75
100
125
150
TC, Case Temperature [℃]
-VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
0
※ N o te s :
1 . Z θ J C ( t) = 2 . 7 8 ℃ /W M a x .
2 . D u ty F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .2
0 .1
0 .0 5
10
PDM
0 .0 2
-1
0 .0 1
10
-5
t1
s in g le p u ls e
10
-4
10
t2
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FQD4P25TM_WS Rev. C0
4
www.fairchildsemi.com
FQD4P25TM_WS — P-Channel QFET® MOSFET
Typical Characteristics
FQD4P25TM_WS — P-Channel QFET® MOSFET
200nF
200nF
12V
VGS
Same
Same T
Ty
ype
as DUT
DUT
50KΩ
50K
Ω
Qg
300nF
300nF
VDS
VGS
Qgs
Qgd
DUT
DUT
IG = const.
Charg
Ch
arge
e
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
t on
td(on
d( on))
VDD
VGS
VGS
t of
offf
tr
td(of
d( offf)
tf
10
10%
%
DUT
VGS
VDS
90%
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
BVDS
DSS
S
1
-----------------------------EAS = ---- L IAS2 ------2
BVDS
DSS
S - VDD
L
tp
ID
RG
VGS
Tim
Ti
me
VDD
VDD
VDS (t)
(t))
ID (t
DUT
DUT
IAS
BVDSS
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FQD4P25TM_WS Rev. C0
5
www.fairchildsemi.com
VDS
DUT
_
I SD
L
Driver
Driv
er
RG
VGS
VGS
( Driv
Driver
er )
I SD
( DUT )
Compliment of DUT
Comp
(N-C
(N-Channel
hannel))
VDD
• dv/dt cont
ntrrolled by RG
• ISD con
onttrol
ollled by pu
pullse pe
perriod
Gate Pul
ulsse W idth
D = -------------------------te Pu
Gate
Ga
Pullse Pe
Perriod
10
10V
V
Body
Bo
dy Diod
ode
e Reverse Curren
entt
IRM
di//dt
di
IFM , Bo
Body
dy Diod
ode
e For
orw
ward Curren
entt
VDS
( DUT )
VSD
Body
Bo
dy Diode
For
Forw
ward Vol
olttag
age
e Drop
Drop
VDD
Body
Bo
dy Di
Diod
ode
e Recov
cove
ery dv
dv/d
/dtt
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FQD4P25TM_WS Rev. C0
6
www.fairchildsemi.com
FQD4P25TM_WS — P-Channel QFET® MOSFET
+
FQD4P25TM_WS — P-Channel QFET® MOSFET
Mechanical Dimensions
Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003
©2011 Fairchild Semiconductor Corporation
FQD4P25TM_WS Rev. C0
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
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As used here in:
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2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2011 Fairchild Semiconductor Corporation
FQD4P25TM_WS Rev. C0
8
www.fairchildsemi.com
FQD4P25TM_WS — P-Channel QFET® MOSFET
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