Download FQPF15P12 Absolute Maximum Ratings

FQPF15P12
P-Channel QFET® MOSFET
-120 V, -15 A, 0.2 Ω
Description
Features
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
• -15 A, -120 V, RDS(on) = 0.2 Ω (Max.) @ VGS=-10 V, ID = -7.5 A
• Low Gate Charge (Typ. 29 nC)
• Low Crss (Typ. 110 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
S
!
G!
●
●
▶ ▲
●
TO-220F
GD S
!
D
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
- Continuous (TC = 100°C)
FQPF15P12
-120
Unit
V
-15 *
A
-10.6 *
A
(Note 1)
-60 *
A
IDM
Drain Current
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
1157
mJ
IAR
Avalanche Current
(Note 1)
-15
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
10
-5.0
41
0.27
-55 to +175
mJ
V/ns
W
W/°C
°C
300
°C
FQPF15P12
3.66
Unit
°C/W
--
°C/W
62.5
°C/W
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case, Max.
RθJS
Thermal Resistance, Case-to-Sink, Max.
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
©2003 Fairchild Semiconductor Corporation
FQPF15P12 Rev. C1
www.fairchildsemi.com
FQPF15P12 P-Channel QFET® MOSFET
August 2013
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Unit
-120
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
--
-0.13
VDS = -120 V, VGS = 0 V
--
--
-1
µA
VDS = -96 V, TC = 150°C
--
--
-10
µA
Gate-Body Leakage Current, Forward
VGS = -30 V, VDS = 0 V
--
--
-100
nA
Gate-Body Leakage Current, Reverse
VGS = 30 V, VDS = 0 V
--
--
100
nA
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
-2.0
--
-4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -7.5 A
--
0.17
0.2
Ω
gFS
Forward Transconductance
VDS = -40 V, ID = -7.5 A
--
9.5
--
S
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
--
850
1100
pF
--
310
400
pF
--
110
140
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -60 V, ID = -15 A,
RG = 25 Ω
(Note 4)
VDS = -96 V, ID = -15 A,
VGS = -10 V
(Note 4)
--
15
40
ns
--
100
210
ns
--
80
170
ns
--
80
170
ns
--
29
38
nC
--
5.1
--
nC
--
15
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-15
A
ISM
--
--
-60
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -15 A
Drain-Source Diode Forward Voltage
--
--
-4.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -15 A,
dIF / dt = 100 A/µs
--
126
--
ns
--
0.61
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 6.0mH, IAS = -15A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -15A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
©2003 Fairchild Semiconductor Corporation
FQPF15P12 Rev. C1
www.fairchildsemi.com
FQPF15P12 P-Channel QFET® MOSFET
Electrical Characteristics
2
2
10
VGS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
Bottom : -4.5 V
Top :
1
10
1
-I D, Drain Current [A]
-ID, Drain Current [A]
10
0
10
10
o
175 C
o
25 C
0
10
o
-55 C
※ Notes :
1. VDS = -40V
2. 250μ s Pulse Test
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
-1
10
-1
-1
0
10
10
1
10
10
2
4
6
8
10
-VGS, Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.0
0.9
0.7
-I DR , Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
0.8
VGS = -10V
0.6
0.5
0.4
VGS = -20V
0.3
0.2
0.1
0.0
※ Note : TJ = 25℃
1
10
175℃ 25℃
0
10
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
-1
0
20
40
10
60
0.0
0.5
1.0
-ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2.0
2.5
3.0
3.5
4.0
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
2200
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
2000
1800
VDS = -30V
10
1400
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
1200
1000
Crss
800
600
400
200
0
-1
10
0
10
1
10
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
FQPF15P12 Rev. C1
-V GS , Gate-Source Voltage [V]
Ciss
1600
Capacitance [pF]
1.5
-VSD, Source-Drain voltage [V]
VDS = -60V
VDS = -96V
8
6
4
2
※ Note : ID = -15A
0
0
10
20
30
40
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
FQPF15P12 P-Channel QFET® MOSFET
Typical Characteristics
FQPF15P12 P-Channel QFET® MOSFET
Typical Characteristics
(Continued)
3.0
1.2
RDS(ON) , (Normalized)
Drain-Source On-Resistance
-BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = -250 μ A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = -10 V
2. ID = -7.5 A
0.5
0.0
-100
200
-50
0
o
TJ, Junction Temperature [ C]
50
100
150
200
o
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
20
Operation in This Area
is Limited by R DS(on)
2
10
-I D, Drain Current [A]
-I D, Drain Current [A]
15
100 µs
1 ms
1
10
10 ms
DC
0
10
※ Notes :
10
5
o
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
0
25
-1
10
0
1
10
2
10
10
50
75
125
150
175
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9. Maximum Safe Operating Area
D = 0 .5
10
0
0 .2
※ N o te s :
1 . Z θ J C(t) = 3 .6 6 ℃ /W M a x.
2 . D u ty F a c to r, D = t 1 /t 2
3 . T JM - T C = P D M * Z θ J C(t)
0 .1
0 .0 5
10
0 .0 2
0 .0 1
-1
JC
Zθ (t) , T h e rm a l R e s p o n s e
100
TC, Case Temperature [℃]
-VDS, Drain-Source Voltage [V]
PDM
s in g le p u ls e
10
t1
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1 , S q u a r e W a v e P u l s e D u r a t i o n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
FQPF15P12 Rev. C1
www.fairchildsemi.com
FQPF15P12 P-Channel QFET® MOSFET
Gate Charge Test Circuit & Waveform
50KΩ
200nF
12V
VGS
Same Type
as DUT
Qg
-10V
300nF
VDS
VGS
Qgs
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
t on
VDD
VGS
td(on)
VGS
t off
tr
td(off)
tf
10%
DUT
-10V
VDS
90%
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
tp
ID
RG
VDD
DUT
-10V
tp
©2003 Fairchild Semiconductor Corporation
FQPF15P12 Rev. C1
VDD
Time
VDS (t)
ID (t)
IAS
BVDSS
www.fairchildsemi.com
FQPF15P12 P-Channel QFET® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
VDS
DUT
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Compliment of DUT
(N-Channel)
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
Body Diode Reverse Current
IRM
di/dt
IFM , Body Diode Forward Current
VDS
( DUT )
VSD
Body Diode
Forward Voltage Drop
VDD
Body Diode Recovery dv/dt
©2003 Fairchild Semiconductor Corporation
FQPF15P12 Rev. C1
www.fairchildsemi.com
FQPF15P12 P-Channel QFET® MOSFET
Mechanical Dimensions
TO-220F
TO-220F 3L - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2003 Fairchild Semiconductor Corporation
FQPF15P12 Rev. C1
Dimensions in Millimeters
www.fairchildsemi.com
tm
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Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2003 Fairchild Semiconductor Corporation
FQPF15P12 Rev. C1
www.fairchildsemi.com
FQPF15P12 P-Channel QFET® MOSFET
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