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FGB3236_F085 / FGI3236_F085 EcoSPARK 320mJ, 360V, N-Channel Ignition IGBT Features Applications Industry Standard D2-Pak package Automotive lgnition Coil Driver Circuits o SCIS Energy = 320mJ at TJ = 25 C Coil On Plug Applications Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Package E GATE G EMITTER COLLECTOR JEDEC TO-263AB D2-Pak @2008 Fairchild Semiconductor Corporation FGB3236_F085 / FGI3236_F085 Rev. A1 COLLECTOR (FLANGE) TO262AB FDI SERIES 1 www.fairchildsemi.com FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT October 2013 Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) Ratings 360 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) 24 V ESCIS25 Self Clamping Inductive Switching Energy (ISCIS = 14.7A, L = 3.0mHy, TJ = 25°C) 320 mJ 160 mJ ESCIS150 Self Clamping Inductive Switching Energy (ISCIS = 10.4A, L = 3.0mHy, TJ = 150°C) IC25 Collector Current Continuous, at VGE = 4.0V, TC = 25°C 44 A IC110 Collector Current Continuous, at VGE = 4.0V, TC = 110°C 27 A VGEM Gate to Emitter Voltage Continuous ±10 V Power Dissipation Total, at TC = 25°C 187 W 1.25 W/oC PD Power Dissipation Derating, for TC > 25oC TJ Operating Junction Temperature Range -40 to +175 o C TSTG Storage Junction Temperature Range -40 to +175 o C TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 o C TPKG Max. Lead Temp. for Soldering (Package Body for 10s) 260 o C ESD Electrostatic Discharge Voltage at100pF, 1500Ω 4 kV Package Marking and Ordering Information Device Marking FGB3236 Device FGB3236_F085 Package TO263 Reel Size 330mm Tape Width 24mm Quantity 800 units FGI3236 FGI3236_F085 TO262 Tube NA 50 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER ICE = 2mA, VGE = 0, Collector to Emitter Breakdown Voltage RGE = 1KΩ, See Fig. 15 TJ = -40 to 150oC 330 363 390 V BVCES ICE = 10mA, VGE = 0V, Collector to Emitter Breakdown Voltage RGE = 0, TJ = -40 to 150oC 350 378 410 V BVECS Emitter to Collector Breakdown Voltage ICE = -75mA, VGE = 0V, TC = 25°C 30 - - V BVGES Gate to Emitter Breakdown Voltage IGES = ±2mA ±12 ±14 - V Collector to Emitter Leakage Current VCES = 250V, See Fig. 11 TC = 25oC - - 25 µA - - 1 mA IECS Emitter to Collector Leakage Current VEC = 24V, See Fig. 11 TC = 25oC - - 1 - - 40 R1 Series Gate Resistance R2 Gate to Emitter Resistance ICES TC = 150oC TC = 150oC mA - 100 - Ω 10K - 30K Ω On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V, TC = 25oC, See Fig. 3 - 1.14 1.4 V VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V, TC = 150oC, See Fig. 4 - 1.32 1.7 V - 1.61 2.05 V 50 - - A VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V, ICE(ON) Collector to Emitter On State Current FGB3236_F085 / FGI3236_F085 Rev. A1 VGE = 5V, VCE = 5V 2 o TC = 150 C www.fairchildsemi.com FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT Device Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ - 20 Max Units Dynamic Characteristics QG(ON) Gate Charge ICE = 10A, VCE = 12V, VGE = 5V, See Fig.14 VGE(TH) Gate to Emitter Threshold Voltage ICE = 1mA, VCE = VGE, See Fig. 10 VGEP Gate to Emitter Plateau Voltage VCE = 12V, ICE = 10A TC = 25oC TC = 150oC - nC 1.3 1.6 2.2 0.75 1.1 1.8 - 2.6 - V - 0.65 4 µs - 1.7 7 µs - 5.4 15 µs - 1.64 15 µs - - 320 mJ - 0.8 oC/W V Switching Characteristics td(ON)R trR td(OFF)L tfL SCIS Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω VGE = 5V, RG = 1KΩ Current Rise Time-Resistive TJ = 25oC, See Fig.12 Current Turn-Off Delay Time-Inductive VCE = 300V, L = 500µHy, VGE = 5V, RG = 1KΩ Current Fall Time-Inductive TJ = 25oC, See Fig.12 Self Clamped inductive Switching 25oC, TJ = L = 3.0mHy, ICE = 14.7A, RG = 1KΩ, VGE = 5V, See Fig.1&2 Thermal Characteristics RθJC Thermal Resistance Junction to Case FGB3236_F085 / FGI3236_F085 Rev. A1 All Packages 3 - www.fairchildsemi.com FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT Electrical Characteristics TA = 25°C unless otherwise noted ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 35 RG = 1KΩ, VGE = 5V 30 25 20 o TJ = 25 C 15 o TJ = 150 C 10 5 0 SCIS Curves valid for Vclamp Voltages of <410V 0 20 40 60 80 100 120 tCLP, TIME IN CLAMP (µS) 140 160 20 o TJ = 25 C 15 10 o TJ = 150 C 5 0 SCIS Curves valid for Vclamp Voltages of <410V 0 2 4 6 L, INDUCTANCE (mHy) 8 10 Figure 2. Self Clamped Inductive Switching Current vs. Inductance ICE = 6A 1.20 ICE = 10A 1.40 VGE = 3.7V VGE = 4.0V VGE = 4.0V 1.35 1.15 VGE = 3.7V 1.30 1.10 VGE = 8V VGE = 5V 1.05 1.25 VGE = 4.5V Figure 3. Collector to Emitter On-State Voltage vs. Junction Temperature ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 8.0V VGE = 5.0V 40 VGE = 4.5V VGE = 4.0V VGE = 3.7V 30 20 10 o TJ = -40 C 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector to Emitter On-State Voltage vs. Collector Current FGB3236_F085 / FGI3236_F085 Rev. A1 VGE = 4.5V VGE = 8V Figure 4. Collector to Emitter On-State Voltage vs. Junction Temperature 50 0 VGE = 5V 1.20 -75 -50 -25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERTURE ( C) 1.00 -75 -50 -25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERTURE ( C) ICE, COLLECTOR TO EMITTER CURRENT (A) 25 1.45 1.25 0 RG = 1KΩ, VGE = 5V 30 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. Self Clamped Inductive Switching Current vs. Time in Clamp 35 50 VGE = 8.0V VGE = 5.0V 40 VGE = 4.5V VGE = 4.0V VGE = 3.7V 30 20 10 o 0 TJ = 25 C 0 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 6. Collector to Emitter On-State Voltage vs. Collector Current 4 www.fairchildsemi.com FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) (Continued) 50 VGE = 8.0V VGE = 5.0V 40 VGE = 4.5V VGE = 4.0V VGE = 3.7V 30 20 10 o 0 TJ = 175 C 0 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 50 40 VTH, THRESHOLD VOLTAGE (V) ICE, DC COLLECTOR CURRENT (A) 40 30 20 10 50 75 100 125 150 o TC, CASE TEMPERATURE( C) 0 1.0 1.4 1.2 1.0 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE(oC) Figure 10. Threshold Voltage vs. Junction Temperature SWITCHING TIME (µS) LEAKAGE CURRENT (µA) 1.6 12 VECS = 24V 1000 100 VCES = 300V 10 8 ICE = 6.5A, VGE = 5V, RG = 1KΩ Resistive tOFF Inductive tOFF 6 4 Resistive tON 2 VCES = 250V 0 25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERATURE ( C) Figure 11. Leakage Current vs. Junction Temperature FGB3236_F085 / FGI3236_F085 Rev. A1 4.5 VCE = VGE ICE = 1mA 1.8 10000 -25 1.5 2.0 2.5 3.0 3.5 4.0 VGE, GATE TO EMITTER VOLTAGE (V) 2.0 14 0.1 -50 TJ = -40oC 10 50000 1 TJ = 25oC 0.8 -50 175 Figure 9. DC Collector Current vs. Case Temperature 10 TJ = 175oC 20 Figure 8. Transfer Characteristics VGE = 4.0V 0 25 VCE = 5V 30 Figure 7. Collector to Emitter On-State Voltage vs. Collector Current 50 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 50 75 100 125 150 o TJ, JUNCTION TEMPERATURE ( C) 175 Figure 12. Switching Time vs. Junction Temperature 5 www.fairchildsemi.com FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT Typical Performance Curves VGS, GATE TO EMITTER VOLTAGE(V) (Continued) CAPACITANCE (pF) 2000 f = 1MHz VGE = 0V 1600 CIES 1200 800 CRES 400 0 COES 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 25 10 o ICE = 10A, TJ = 25 C 8 VCE = 6V 6 VCE = 12V 4 2 0 0 10 Figure 13. Capacitance vs. Collector to Emitter Voltage 20 30 Qg, GATE CHARGE(nC) 40 50 Figure 14. Gate Charge BVCER, BREAKDOWN VOLTAGE (V) 380 ICER = 10mA 370 o TJ = -40 C o TJ = 25 C 360 o TJ = 175 C 350 10 100 RG, SERIES GATE RESISTANCE (Ω ) 6000 1000 Figure 15. Break Down Voltage vs. Series Gate Resistance NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 1E-3 -5 10 -4 10 -3 -2 10 10 t, RECTANGULAR PULSE DURATION(s) -1 10 1 Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case FGB3236_F085 / FGI3236_F085 Rev. A1 6 www.fairchildsemi.com FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT Typical Performance Curves FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT Test Circuit and Waveforms FGB3236_F085 / FGI3236_F085 Rev. A1 7 www.fairchildsemi.com THIS DRAWING IS THE PROPERTY OF FAIRCHILD SEMICONDUCTOR CORPORATION. NO USE THEREOF SHALL BE MADE OTHER THAN AS A REFERENCE FOR PROPOSALS AS SUBMITTED TO FAIRCHILD SEMICONDUCTOR CORPORATION FOR JOBS TO BE EXECUTED IN CONFORMITY WITH SUCH PROPOSALS UNLESS THE CONSENT OF SAID FAIRCHILD SEMICONDUCTOR CORPORATION HAS PREVIOUSLY BEEN OBTAINED. NO PART OF THIS DRAWING SHALL BE COPIED OR DUPLICATED OR ITS CONTENTS DISCLOSED. THE INFORMATION CONTAINED ON THIS DRAWING IS CONFIDENTIAL AND PROPRIETARY. 10.29 9.65 A 8.33 6.22 4.83 4.06 1.40 1.00 7.88 6.86 B 1.40 1.14 7° 9.65 8.64 5° 5° 1 2 3 B 3.96 2.80 2.13 14.73 12.70 2.79 2.03 1.78 1.14 SEE NOTE "G" B 2.54 5.08 B 0.90 B 0.64 0.254 A M B 0.64 0.33 NOTES: A. EXCEPT WHERE NOTED CONFORMS TO TO262 JEDEC VARIATION AA. B DOES NOT COMPLY JEDEC STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ANSI Y14.5-1994. F. LOCATION OF PIN HOLE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF PACKAGE) G. MAXIMUM WIDTH FOR F102 DEVICE = 1.35 MAX. H. DRAWING FILE NAME: TO262A03REV5 APPROVALS DRAWN: BOBOY MALDO CHECKED: KH LEE APPROVED: BY HUANG DATE 11FEB2010 TO262 3LD JEDEC VARIATION AA APPROVED: HOWARD ALLEN SCALE PROJECTION [MM] INCH SIZE DRAWING NUMBER REV 1:1 N/A MKT-TO262A03 5 FORMERLY: N/A SHEET : 1 OF 1 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 © Fairchild Semiconductor Corporation www.fairchildsemi.com