Download FDMS86101DC N-Channel Dual Cool Shielded Gate PowerTrench MOSFET

FDMS86101DC
N-Channel Dual CoolTM Shielded Gate PowerTrench® MOSFET
100 V, 60 A, 7.5 mΩ
Features
General Description
„ Shielded Gate MOSFET Technology
„ High performance technology for extremely low rDS(on)
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
incorporates Shielded Gate technology. Advancements in both
silicon and Dual CoolTM package technologies have been
combined to offer the lowest rDS(on) while maintaining excellent
switching performance by extremely low Junction-to-Ambient
thermal resistance.
„ 100% UIL Tested
Applications
„ RoHS Compliant
„ Primary DC-DC MOSFET
„ Dual Cool
TM
Top Side Cooling PQFN package
„ Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 14.5 A
„ Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 11.5 A
„ Secondary Synchronous Rectifier
„ Load Switch
D
D
D
S
Pin 1
S
D
S
D
S
D
G
D
D
G
Top
S
S
Pin 1
S
Power 56
Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
-Continuous
TC = 25 °C
-Continuous
TA = 25 °C
TJ, TSTG
±20
V
(Note 1a)
14.5
A
200
Single Pulse Avalanche Energy
PD
Units
V
60
-Pulsed
EAS
Ratings
100
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
216
125
(Note 1a)
Operating and Storage Junction Temperature Range
3.2
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
(Top Source)
2.3
RθJC
Thermal Resistance, Junction to Case
(Bottom Drain)
1.0
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
38
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
81
RθJA
Thermal Resistance, Junction to Ambient
(Note 1i)
16
RθJA
Thermal Resistance, Junction to Ambient
(Note 1j)
23
RθJA
Thermal Resistance, Junction to Ambient
(Note 1k)
11
°C/W
Package Marking and Ordering Information
Device Marking
86101
Device
FDMS86101DC
©2013 Fairchild Semiconductor Corporation
FDMS86101DC Rev. C4
Package
Dual CoolTM Power 56
1
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS86101DC N-Channel Dual CoolTM Shielded Gate PowerTrench® MOSFET
July 2013
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
4
V
100
V
70
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
rDS(on)
Static Drain to Source On Resistance
VGS = 6 V, ID = 11.5 A
8.3
12
VGS = 10 V, ID = 14.5 A, TJ = 125 °C
10
13
VDD = 10 V, ID = 14.5 A
44
2
-10
VGS = 10 V, ID = 14.5 A
gFS
Forward Transconductance
2.7
6
mV/°C
7.5
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
0.1
2354
3135
pF
467
625
pF
23
35
pF
1.4
3
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
VDD = 50 V , ID = 14.5 A,
VGS = 10 V, RGEN = 6 Ω
Total Gate Charge
VGS = 0 V to 10 V
Total Gate Charge
VGS = 0 V to 5 V
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 50 V
ID = 14.5 A
14
25
ns
8.2
17
ns
25
40
ns
5.5
11
ns
31
44
nC
18
25
nC
8.3
nC
7
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
©2013 Fairchild Semiconductor Corporation
FDMS86101DC Rev. C4
VGS = 0 V, IS = 2.7 A
(Note 2)
0.71
1.2
VGS = 0 V, IS = 14.5 A
(Note 2)
0.78
1.3
IF = 14.5 A, di/dt = 100 A/μs
2
V
54
87
ns
62
99
nC
www.fairchildsemi.com
FDMS86101DC N-Channel Dual CoolTM Shielded Gate PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
RθJC
Thermal Resistance, Junction to Case
(Top Source)
2.3
RθJC
Thermal Resistance, Junction to Case
(Bottom Drain)
1.0
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
38
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
81
RθJA
Thermal Resistance, Junction to Ambient
(Note 1c)
27
RθJA
Thermal Resistance, Junction to Ambient
(Note 1d)
34
RθJA
Thermal Resistance, Junction to Ambient
(Note 1e)
16
RθJA
Thermal Resistance, Junction to Ambient
(Note 1f)
19
RθJA
Thermal Resistance, Junction to Ambient
(Note 1g)
26
RθJA
Thermal Resistance, Junction to Ambient
(Note 1h)
61
RθJA
Thermal Resistance, Junction to Ambient
(Note 1i)
16
RθJA
Thermal Resistance, Junction to Ambient
(Note 1j)
23
RθJA
Thermal Resistance, Junction to Ambient
(Note 1k)
11
RθJA
Thermal Resistance, Junction to Ambient
(Note 1l)
13
°C/W
NOTES:
1. RθJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
b. 81 °C/W when mounted on
a minimum pad of 2 oz copper
a. 38 °C/W when mounted on
a 1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 oC; N-ch: L = 0.3 mH, IAS = 38 A, VDD = 90 V, VGS = 10 V.
©2013 Fairchild Semiconductor Corporation
FDMS86101DC Rev. C4
3
www.fairchildsemi.com
FDMS86101DC N-Channel Dual CoolTM Shielded Gate PowerTrench® MOSFET
Thermal Characteristics
5
VGS = 8 V
VGS = 10 V
ID, DRAIN CURRENT (A)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
200
VGS = 7 V
VGS = 6 V
150
100
VGS = 5 V
50
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
5
VGS = 5 V
4
VGS = 6 V
3
VGS = 7 V
2
1
0
0
50
100
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
200
25
ID = 14.5 A
VGS = 10 V
2.0
rDS(on), DRAIN TO
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-75
-50
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
150
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.2
ID = 14.5 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
20
15
TJ = 125 oC
10
5
0
4
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
TJ = 25 oC
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
IS, REVERSE DRAIN CURRENT (A)
200
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
VGS = 10 V
VGS = 8 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
150
VDS = 5 V
100
TJ = 150 oC
50
TJ = 25 oC
200
100
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
TJ = -55 oC
0
2
3
4
5
6
7
0.001
0.0
8
Figure 5. Transfer Characteristics
©2013 Fairchild Semiconductor Corporation
FDMS86101DC Rev. C4
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
4
www.fairchildsemi.com
FDMS86101DC N-Channel Dual CoolTM Shielded Gate PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
5000
ID = 14.5 A
Ciss
VDD = 25 V
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 50 V
6
VDD = 75 V
4
1000
Coss
100
2
f = 1 MHz
VGS = 0 V
0
0
8
16
24
1
Figure 7. Gate Charge Characteristics
100
Figure 8. Capacitance vs Drain
to Source Voltage
100
TJ
ID, DRAIN CURRENT (A)
90
= 25 oC
10
TJ =
100 oC
TJ = 125 oC
75
60
VGS = 10 V
45
VGS = 6 V
Limited by Package
30
15
o
RθJC = 1.0 C/W
1
0.001
0.01
0.1
1
10
0
25
100 300
50
150
2000
P(PK), PEAK TRANSIENT POWER (W)
100
1 ms
10
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
RθJA = 81 oC/W
10 s
TA = 25 oC
0.01
0.01
125
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
300
0.1
100
o
Figure 9. Unclamped Inductive
Switching Capability
1
75
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
IAS, AVALANCHE CURRENT (A)
Crss
10
0.1
32
0.1
DC
1
10
100
500
TA = 25 oC
100
10
1 -3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2013 Fairchild Semiconductor Corporation
FDMS86101DC Rev. C4
SINGLE PULSE
RθJA = 81 oC/W
1000
Figure 12. Single Pulse Maximum
Power Dissipation
5
www.fairchildsemi.com
FDMS86101DC N-Channel Dual CoolTM Shielded Gate PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 81 C/W
0.001 -3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2013 Fairchild Semiconductor Corporation
FDMS86101DC Rev. C4
6
www.fairchildsemi.com
FDMS86101DC N-Channel Dual CoolTM Shielded Gate PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS86101DC N-Channel Dual CoolTM Shielded Gate PowerTrench® MOSFET
Dimensional Outline and Pad Layout
©2013 Fairchild Semiconductor Corporation
FDMS86101DC Rev. C4
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2013 Fairchild Semiconductor Corporation
FDMS86101DC Rev. C4
8
www.fairchildsemi.com
FDMS86101DC N-Channel Dual CoolTM Shielded Gate PowerTrench® MOSFET
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