Download FDMS86201 Shielded Gate N-Channel

FDMS86201
N-Channel Shielded Gate PowerTrench® MOSFET
120 V, 49 A, 11.5 mΩ
Features
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
„ Shielded Gate MOSFET Technology
„ Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 11.6 A
„ Max rDS(on) = 14.5 mΩ at VGS = 6 V, ID = 10.7 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Application
„ MSL1 robust package design
„ DC-DC Conversion
„ 100% UIL tested
„ RoHS Compliant
Bottom
Top
Pin 1
S
D
D
D
S
S
G
D
S
D
S
D
S
D
G
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
TC = 25 °C
-Continuous
TA = 25 °C
ID
TJ, TSTG
±20
V
(Note 1a)
11.6
A
160
Single Pulse Avalanche Energy
PD
Units
V
49
-Pulsed
EAS
Ratings
120
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
264
104
(Note 1a)
Operating and Storage Junction Temperature Range
2.5
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
1.2
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS86201
Device
FDMS86201
©2010 Fairchild Semiconductor Corporation
FDMS86201 Rev.C2
Package
Power 56
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS86201 N-Channel Shielded Gate PowerTrench® MOSFET
August 2013
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 96 V, VGS = 0 V
IGSS
Gate to Source Leakage Current, Forward VGS = ±20 V, VDS = 0 V
120
V
95
mV/°C
1
μA
100
nA
4.0
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
2.0
2.6
-10
mV/°C
VGS = 10 V, ID = 11.6 A
9.6
11.5
VGS = 6 V, ID = 10.7 A
11.8
14.5
VGS = 10 V, ID = 11.6 A, TJ = 125 °C
15.7
21.5
VDS = 10 V, ID = 11.6 A
39
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 60 V, VGS = 0 V,
f = 1 MHz
2056
2735
pF
322
430
pF
15
25
pF
Ω
1.2
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0 V to 10 V
Qg
Total Gate Charge
VGS = 0 V to 5 V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 60 V, ID = 11.6 A,
VGS = 10 V, RGEN = 6 Ω
VDD = 60 V,
ID = 11.6 A
13
24
7.7
16
ns
ns
27
44
ns
7.1
15
ns
32
46
nC
18
26
nC
8.1
nC
7.1
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2 A
(Note 2)
0.69
1.2
VGS = 0 V, IS = 11.6 A
(Note 2)
0.78
1.3
IF = 11.6 A, di/dt = 100 A/μs
V
66
106
ns
88
140
nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 125 °C/W when mounted on a
minimum pad of 2 oz copper.
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 23 A, VDD = 120 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 50 A.
©2010 Fairchild Semiconductor Corporation
FDMS86201 Rev.C2
2
www.fairchildsemi.com
FDMS86201 N-Channel Shielded Gate PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
3.0
ID, DRAIN CURRENT (A)
VGS = 10 V
VGS = 6 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
160
VGS = 5.5 V
120
VGS = 5 V
80
VGS = 4.5 V
40
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
2.5
VGS = 4.5 V
1.5
VGS = 6 V
1.0
0.5
0
1
2
3
4
5
0
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
80
120
160
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
40
I = 11.6 A
2.0 D
VGS = 10 V
rDS(on), DRAIN TO
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75
SOURCE ON-RESISTANCE (mΩ)
2.2
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
30
ID = 11.6 A
20
TJ = 125 oC
10
TJ = 25 oC
0
-50
-25
0
25
50
75
100 125 150
2
4
TJ, JUNCTION TEMPERATURE (oC)
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
120
VDS = 5 V
80
oC
TJ = 25 oC
40
TJ = -55 oC
0
1
2
3
4
5
8
10
Figure 4. On-Resistance vs Gate to
Source Voltage
160
TJ = 150
6
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
VGS = 5.5 V
VGS = 5 V
2.0
6
200
100
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
7
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2010 Fairchild Semiconductor Corporation
FDMS86201 Rev.C2
3
1.2
www.fairchildsemi.com
FDMS86201 N-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
4000
Ciss
ID = 11.6 A
VDD = 60 V
8
Coss
1000
VDD = 35 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 85 V
6
4
100
Crss
f = 1 MHz
VGS = 0 V
2
10
0.1
0
0
5
10
15
20
25
30
35
1
Figure 7. Gate Charge Characteristics
75
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
100
Figure 8. Capacitance vs Drain
to Source Voltage
60
TJ = 25 oC
10
TJ = 100
TJ =
oC
125 oC
60
45
VGS = 10 V
Limited by Package
30
VGS = 6 V
15
o
RθJC = 1.2 C/W
1
0.01
0.1
1
10
0
25
100
50
150
1000
P(PK), PEAK TRANSIENT POWER (W)
10
1ms
10 ms
1
THIS AREA IS
LIMITED BY rDS(on)
100 ms
1s
SINGLE PULSE
TJ = MAX RATED
10 s
RθJA = 125 oC/W
DC
o
TA = 25 C
0.001
0.01
125
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
200
100
0.01
100
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
0.1
75
o
tAV , TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
0.1
1
10
100
600
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
100
10
1
0.5
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2010 Fairchild Semiconductor Corporation
FDMS86201 Rev.C2
VGS = 10 V
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMS86201 N-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 125 C/W
0.001
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation
FDMS86201 Rev.C2
5
www.fairchildsemi.com
FDMS86201 N-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS86201 N-Channel Shielded Gate PowerTrench® MOSFET
Dimensional Outline and Pad Layout
©2010 Fairchild Semiconductor Corporation
FDMS86201 Rev.C2
6
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I65
FDMS86201 Rev.C2
7
www.fairchildsemi.com
FDMS86201 N-Channel Shielded Gate PowerTrench® MOSFET
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