Download FCA36N60NF N FRFET

FCA36N60NF
N 沟道 SupreMOS® FRFET® MOSFET
600 V、34.9 A、95 m
特性
说明
• RDS(on) = 80 m (Typ.)@VGS = 10V, ID = 18 A
SupreMOS® MOSFET 是飞兆半导体的下一代高压超级结（SJ）
技术，该技术采用区别于传统 SJ MOSFET 产品的深沟槽填充工
艺。这项 先 进技 术 和精 密 的工 艺 控制 提 供了 最 低的 Rsp onresistance （导 通 电 阻 规 格） ，卓 越 的 开 关 性 能 和 耐 用 性。
SupreMOS MOSFET 技术适用于高频开关电源转换器应用，如
功率因数校正 (PFC)、服务器 / 电信电源、平板电视电源、 ATX
电源及工业电源应用。 SupreMOS FRFET® MOSFET 优化版的
本体二极管的反向恢复性能可去除额外元件并提高系统可靠性。
• 超低栅极电荷 （典型值 Qg = 86 nC)
• 低有效输出电容 （典型值 Coss(eff.)= 338 pF)
• 100% 经过雪崩测试
• 符合 RoHS 标准
应用
• 太阳能逆变器
• AC-DC 电源
D
G
G
D
S
TO-3PN
S
MOSFET 最大额定值 TC = 25°C 除非另有说明。
符号
VDSS
漏极－源极电压
参数
VGSS
栅极－源极电压
FCA36N60NF
600
单位
V
±30
V
34.9
连续 (TC = 100°C)
22
ID
漏极电流
连续 (TC = 25°C)
脉冲
A
IDM
漏极电流
（说明 1）
104.7
A
EAS
单脉冲雪崩能量
（说明 2）
1800
mJ
IAR
雪崩电流
（说明 1）
12
A
EAR
重复雪崩能量
MOSFET dv/dt
（说明 1）
3.12
mJ
二极管恢复 dv/dt 峰值
（说明 3）
dv/dt
PD
功耗
TJ, TSTG
工作和存储温度范围
用于焊接的最高引脚温度，
距离外壳 1/8”，持续 5 秒
TL
100
50
V/ns
(TC = 25°C)
312
W
降低至 25°C 以上
2.6
W/°C
-55 至 +150
°C
300
°C
FCA36N60NF
单位
热性能
符号
参数
RJC
结至外壳热阻最大值
0.40
RCS
外壳与散热体之间的热阻典型值
0.24
RJA
结至环境热阻最大值
©2011 飞兆半导体公司
FCA36N60NF Rev. C1
°C/W
40
1
www.fairchildsemi.com
FCA36N60NF — N 沟道 SupreMOS® FRFET® MOSFET
2014 年 2 月
器件编号
FCA36N60NF
顶标
FCA36N60NF
封装
TO-3PN
包装方法
塑料管
卷尺寸
不适用
带宽
不适用
数量
30 单元
电气特性
符号
参数
测试条件
最小值
典型值
最大值
单位
ID = 1 mA， VGS = 0 V， TJ = 25°C
600
-
-
V
ID = 1 mA，参考条件为 25°C
-
0.60
-
V/°C
VDS = 480 V， VGS = 0 V
-
-
10
-
-
100
关断特性
BVDSS
BVDSS
/ TJ
漏极 - 源极击穿电压
击穿电压温度系数
IDSS
零栅极电压漏极电流
IGSS
栅极 - 体漏电流
VGS = ±30 V， VDS = 0 V
-
-
±100
VGS(th)
RDS(on)
栅极阈值电压
VGS = VDS， ID = 250 A
3.0
3.7
5.0
V
漏极至源极静态导通电阻
VGS = 10 V， ID = 18 A
-
80
95
m
gFS
正向跨导
VDS = 20 V， ID = 18 A
-
39
-
S
-
3191
4245
pF
-
145
195
pF
-
5
8
pF
-
81
-
pF
338
-
pF
nC
TJ = 125°C
A
nA
导通特性
动态特性
Ciss
Coss
Crss
输入电容
输出电容
反向传输电容
VDS = 100 V， VGS = 0 V，
f = 1 MHz
输出电容
VDS = 380 V，VGS = 0 V，f = 1 MHz
Cosseff.
有效输出电容
VDS = 0 V， 480 V， VGS = 0 V
-
Qg(tot)
10 V 的栅极电荷总量
VDS = 380 V， ID = 18 A，
VGS = 10 V
-
86
112
-
16
-
nC
-
36
-
nC
-
1.2
-

-
27
64
ns
-
17
44
ns
-
92
194
ns
-
4
18
ns
Coss
Qgs
栅极 - 源极栅极电荷
Qgd
栅极 - 漏极 “ 米勒 ” 电荷
ESR
等效串联电阻 (G-S)
（说明 4）
f = 1 MHz
开关特性
td(on)
导通延迟时间
tr
开通上升时间
td(off)
关断延迟时间
tf
关断下降时间
VDD = 380 V， ID = 18 A，
VGS = 10 V， RG = 4.7 
（说明 4）
漏极 - 源极二极管特性
IS
漏极 - 源极二极管最大正向连续电流
-
-
36
A
ISM
漏极 - 源极二极管最大正向脉冲电流
-
-
108
A
VSD
漏极 - 源极二极管正向电压
trr
反向恢复时间
Qrr
反向恢复电荷
VGS = 0 V， ISD = 18 A
-
-
1.2
V
VGS = 0 V， ISD = 18 A，
dIF/dt = 100 A/s
-
166
-
ns
-
1.3
-
C
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. IAS = 12 A， RG = 25 ，启动 TJ = 25°C。
3. ISD 36 A， di/dt  1200 A/s， VDD = 380 V，启动 TJ = 25°C。
4. 本质上独立于工作温度的典型特性。
©2011 飞兆半导体公司
FCA36N60NF Rev. C1
2
www.fairchildsemi.com
FCA36N60NF — N 沟道 SupreMOS® FRFET® MOSFET
封装标识与定购信息
图 1. 通态区域特性
200
200
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.0 V
100
ID, Drain Current[A]
100
ID, Drain Current[A]
图 2. 传输特性
*Notes:
1. 250s Pulse Test
10
o
2. TC = 25 C
1
0.1
1
VDS, Drain-Source Voltage[V]
10
10
o
-55 C
1
0.2
20
图 3. 导通电阻变化 vs. 漏极电流和栅极电压
o
25 C
o
150 C
*Notes:
1. VDS = 20V
2. 250s Pulse Test
2
4
6
8
VGS, Gate-Source Voltage[V]
10
图 4. 体二极管正向电压变化与源极电流和温度
200
150
IS, Reverse Drain Current [A]
RDS(ON) [m],
Drain-Source On-Resistance
100
125
VGS = 10V
100
VGS = 20V
75
10
o
150 C
o
25 C
1
*Notes:
1. VGS = 0V
o
50
*Notes: TC = 25 C
0
18
36
54
72
ID, Drain Current [A]
90
0.2
0.2
108
图 5. 电容特性
VGS, Gate-Source Voltage [V]
Capacitances [pF]
1.4
10
10000
Ciss
1000
Coss
10
0.4
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
图 6. 栅极电荷特性
100000
100
2. 250s Pulse Test
*Notes:
1. VGS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1
0.1
©2011 飞兆半导体公司
FCA36N60NF Rev. C1
Crss
1
10
100
VDS, Drain-Source Voltage [V]
8
VDS = 300V
6
3
VDS = 480V
4
2
0
600
VDS = 120V
*Notes: ID = 18A
0
20
40
60
80
Qg, Total Gate Charge [nC]
100
www.fairchildsemi.com
FCA36N60NF — N 沟道 SupreMOS® FRFET® MOSFET
典型性能特征
图 7. 击穿电压变化与温度
图 8. 导通电阻变化与温度
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 1mA
0.8
-100
-50
0
50
100
o
TJ, Junction Temperature [ C]
2.0
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 18A
0.5
0.0
-100
150
图 9. 最大安全工作区
-50
0
50
100
o
TJ, Junction Temperature [ C]
150
图 10. 最大漏极电流与外壳温度
40
500
100
10s
100s
ID, Drain Current [A]
ID, Drain Current [A]
2.5
1ms
10
10ms
Operation in This Area
is Limited by R DS(on)
1
DC
*Notes:
0.1
o
30
20
10
1. TC = 25 C
o
0.01
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
0
25
1000
50
75
100
125
o
TC, Case Temperature [ C]
150
图 11. 瞬态热响应曲线
ZThermal
[oC/W] [Z ]
JC(t)，热响应
Response
 JC
1
0.5
0.1
0.2
0.1
PDM
0.05
0.01
t1
0.02
0.01
*Notes:
Single pulse
0.005
-5
10
t2
o
1. ZJC(t) = 0.40 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
-4
10
-3
-2
-1
0
10
10
10
10
Pulse
[sec]
t ，Rectangular
矩形脉冲持续时间
[ 秒Duration
]
1
10
2
10
1
©2011 飞兆半导体公司
FCA36N60NF Rev. C1
4
www.fairchildsemi.com
FCA36N60NF — N 沟道 SupreMOS® FRFET® MOSFET
典型性能特征 （接上页）
FCA36N60NF — N 沟道 SupreMOS® FRFET® MOSFET
IG = 常量
图 12. 栅极电荷测试电路与波形
VDS
RG
V
10V
GS
RL
VDS
90%
VDD
VGS
VGS
DUT
10%
td(on)
tr
t on
td(off)
tf
t off
图 13. 阻性开关测试电路与波形
VGS
图 14. 非箝位感性开关测试电路与波形
©2011 飞兆半导体公司
FCA36N60NF Rev. C1
5
www.fairchildsemi.com
FCA36N60NF — N 沟道 SupreMOS® FRFET® MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
图 15. 峰值二极管恢复 dv/dt 测试电路与波形
©2011 飞兆半导体公司
FCA36N60NF Rev. C1
6
www.fairchildsemi.com
FCA36N60NF — N 沟道 SupreMOS® FRFET® MOSFET
机械尺寸
图 16. TO3， 3 引脚、塑料， EIAJ SC-65
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司
产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003
©2011 飞兆半导体公司
FCA36N60NF Rev. C1
7
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2011 飞兆半导体公司
FCA36N60NF Rev. C1
8
www.fairchildsemi.com
FCA36N60NF — N 沟道 SupreMOS® FRFET® MOSFET
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