Download FDD6770A N-Channel PowerTrench MOSFET

FDD6770A
N-Channel PowerTrench® MOSFET
25 V, 4.0 mΩ
Features
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low rDS(on) and fast
switching speed.
„ Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 24 A
„ Max rDS(on) = 8.0 mΩ at VGS = 4.5 V, ID = 18.4 A
„ 100% UIL tested
„ RoHS Compliant
Applications
„ Vcore DC-DC for Desktop Computers and Servers
„ VRM for Intermediate Bus Architecture
D
D
G
G
S
D-PAK
TO -252
(TO-252)
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
PD
TJ, TSTG
Units
V
±20
V
50
97
(Note 1a)
-Pulsed
24
A
200
Single Pulse Avalanche Energy
EAS
Ratings
25
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
50
50
(Note 1a)
Operating and Storage Junction Temperature Range
3.7
-55 to +175
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
3.0
(Note 1a)
40
°C/W
Package Marking and Ordering Information
Device Marking
FDD6770A
Device
FDD6770A
©2009 Fairchild Semiconductor Corporation
FDD6770A Rev.C
Package
D-PAK (TO-252)
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
www.fairchildsemi.com
FDD6770A N-Channel PowerTrench® MOSFET
January 2009
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
3.0
V
25
V
16
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 µA, referenced to 25 °C
-6
VGS = 10 V, ID = 24 A
2.9
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 18.4 A
5.9
8.0
VGS = 10 V, ID = 24 A, TJ = 150 °C
4.4
6.1
VDS = 5 V, ID = 24 A
148
gFS
Forward Transconductance
1.0
1.7
mV/°C
4.0
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1 MHz
1805
2405
pF
392
525
pF
354
535
pF
Ω
1.2
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
9
18
7
14
ns
ns
24
44
ns
VDD = 13 V, ID = 24 A,
VGS = 10 V, RGEN = 6 Ω
5
10
ns
Total Gate Charge
VGS = 0 V to 10 V
33
47
nC
Qg
Total Gate Charge
VGS = 0 V to 5 V
18
26
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 13 V,
ID = 24 A
nC
4.8
nC
7.4
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 3.1 A
(Note 2)
0.7
1.2
VGS = 0 V, IS = 24 A
(Note 2)
0.8
1.3
IF = 24 A, di/dt = 100 A/µs
V
16
28
ns
4
10
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 40 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 96 °C/W when mounted on
a minimum pad
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: EAS of 50 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 10 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 24 A.
©2009 Fairchild Semiconductor Corporation
FDD6770A Rev.C
2
www.fairchildsemi.com
FDD6770A N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
ID, DRAIN CURRENT (A)
VGS = 10 V
VGS = 6 V
VGS = 4.5 V
VGS = 8 V
150
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
100
VGS = 4 V
50
VGS = 3.5 V
0
0.0
4.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
200
VGS = 3.5 V
3.0
VGS = 4 V
2.0
VGS = 6 V
VGS = 8 V
1.5
1.0
VGS = 10 V
0.5
0.5
1.0
1.5
2.0
2.5
3.0
0
50
100
150
200
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
20
ID = 24 A
VGS = 10 V
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 4.5 V
2.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
15
ID = 24 A
10
TJ = 150 oC
5
TJ = 25 oC
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
200
IS, REVERSE DRAIN CURRENT (A)
200
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
150
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
3.5
VDS = 3 V
100
TJ = 175 oC
50
TJ
= 25 oC
TJ = -55 oC
0
0
1
2
3
4
5
6
10
TJ = 175 oC
TJ = 25 oC
1
TJ = -55 oC
0.1
0.2
7
VGS, GATE TO SOURCE VOLTAGE (V)
0.4
0.6
0.8
1.0
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2009 Fairchild Semiconductor Corporation
FDD6770A Rev.C
VGS = 0 V
100
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDD6770A N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
5000
ID = 24 A
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 10 V
6
VDD = 13 V
VDD = 15 V
4
1000
Coss
Crss
2
f = 1 MHz
VGS = 0 V
100
0.1
0
0
5
10
15
20
25
30
35
1
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
90
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
100
TJ = 125 oC
10
TJ = 25 oC
TJ = 150 oC
60
VGS = 10 V
30
Limited by Package
VGS = 4.5 V
o
RθJC = 3.0 C/W
1
0.001
0.01
0.1
1
10
0
25
100
50
75
150
175
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
5000
300
P(PK), PEAK TRANSIENT POWER (W)
10 us
100
100 us
10
THIS AREA IS
LIMITED BY rDS(on)
1 ms
10 ms
SINGLE PULSE
TJ = MAX RATED
100 ms
RθJC = 3.0 oC/W
DC
TC = 25 oC
0.1
0.1
125
o
Figure 9. Unclamped Inductive
Switching Capability
1
100
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
30
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
1
10
100
1000
SINGLE PULSE
RθJC = 3.0 oC/W
TC = 25 oC
100
30
-5
10
-4
10
-3
10
-2
10
-1
10
1
10
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2009 Fairchild Semiconductor Corporation
FDD6770A Rev.C
VGS = 10 V
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDD6770A N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJC
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJc + TC
SINGLE PULSE
o
RθJC = 3.0 C/W
0.01
-5
10
-4
-3
10
-2
10
-1
10
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
2
1
NORMALIZED THERMAL
IMPEDANCE, ZθJA
DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 96 C/W
0.001
0.005
-4
10
(Note 1b)
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FDD6770A Rev.C
5
www.fairchildsemi.com
FDD6770A N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications may
change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make changes at any time without notice to
improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I36
©2009 Fairchild Semiconductor Corporation
FDD6770A Rev.C
6
www.fairchildsemi.com
FDD6770A N-Channel PowerTrench® MOSFET
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