Download IDW100E60 Fast Switching Emitter Controlled Diode

IDW100E60
Fast Switching Emitter Controlled Diode
Features:
 600V Emitter Controlled technology
 Fast recovery
 Soft switching
 Low reverse recovery charge
 Low forward voltage
 175°C junction operating temperature
 Easy paralleling
 Pb-free lead plating; RoHS compliant
 Complete product spectrum and PSpice Models:
http://www.infineon.com
BDTIC
PG-TO247-3
Applications:
 Welding
 Motor drives
Type
VRRM
IF
VF,Tj=25°C
Tj,max
Marking
Package
IDW100E60
600V
100A
1.65V
175C
D100E60
PG-TO247-3
Maximum Ratings
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
Value
600
Unit
V
Continuous forward current
TC = 25C
IF
TC = 90C
150
104
A
96
TC = 100C
Surge non repetitive forward current
TC = 25C, tp = 10 ms, sine halfwave
Maximum repetitive forward current
TC = 25C, tp limited by tj,max, D = 0.5
IFSM
400
A
IFRM
300
A
Power dissipation
TC = 25C
Ptot
TC = 90C
375
212
W
198
TC = 100C
Operating junction temperature
Tj
-40…+175
Storage temperature
Tstg
-55...+150
Soldering temperature
1.6mm (0.063 in.) from case for 10 s
TS
260
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IFAG IPC TD VLS
1
°C
Rev. 2.3 20.09.2013
IDW100E60
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
0.40
K/W
RthJA
40
Characteristic
Thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Value
BDTIC
Parameter
Symbol
Conditions
min.
typ.
max.
600
-
-
T j =2 5 C
-
1.65
2.0
T j =1 7 5 C
-
1.65
-
Unit
Static Characteristic
Collector-emitter breakdown voltage
VRRM
IR=0.25mA
Diode forward voltage
VF
I F = 10 0 A
Reverse leakage current
IR
V
A
V R = 6 00 V
T j =2 5 C
-
-
40
T j =1 7 5 C
-
-
3300
Dynamic Electrical Characteristics
Diode reverse recovery time
trr
T j =2 5 C
-
120
-
ns
Diode reverse recovery charge
Qrr
V R = 4 00 V ,
-
3.6
-
µC
Diode peak reverse recovery current
Irr
I F = 10 0 A,
-
49.5
-
A
Diode peak rate of fall of reverse
recovery current during t b
dI r r / d t
dI F / dt = 1 20 0 A/ µs
-
750
-
A/µs
Diode reverse recovery time
trr
T j =1 2 5 C
-
168
-
ns
Diode reverse recovery charge
Qrrm
V R = 4 00 V ,
-
5.8
-
µC
Diode peak reverse recovery current
Irr
I F = 10 0 A,
-
61.6
-
A
Diode peak rate of fall of reverse
recovery current during t b
dI r r / d t
dI F / dt = 1 20 0 A/ µs
-
705
-
A/µs
Diode reverse recovery time
trr
T j =1 7 5 C
-
200
-
ns
Diode reverse recovery charge
Qrrm
V R = 4 00 V ,
-
7.8
-
µC
Diode peak reverse recovery current
Irr
I F = 10 0 A,
-
67.0
-
A
Diode peak rate of fall of reverse
recovery current during t b
dI r r / d t
dI F / dt = 1 20 0 A/ µs
-
650
-
A/µs
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IFAG IPC TD VLS
2
Rev. 2.3 20.09.2013
IDW100E60
150A
300W
120A
IF, FORWARD CURRENT
Ptot, POWER DISSIPATION
350W
250W
200W
150W
90A
60A
BDTIC
100W
30A
50W
0W
25°C
50°C
75°C
100°C
125°C
0A
25°C
150°C
TC, CASE TEMPERATURE
Figure 1. Power dissipation as a function of
case temperature
(Tj  175C)
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
175°C
200A
150A
100A
125°C
TC, CASE TEMPERATURE
Figure 2. Diode forward current as a
function of case temperature
(Tj  175C)
TJ=25°C
250A
75°C
2.0V
IF=200A
1.5V
100A
50A
1.0V
0.5V
50A
0.0V
0°C
0A
0V
1V
2V
VF, FORWARD VOLTAGE
Figure 3. Typical diode forward current as
a function of forward voltage
50°C
100°C
TJ, JUNCTION TEMPERATURE
Figure 4. Typical diode forward voltage as a
function of junction temperature
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IFAG IPC TD VLS
150°C
3
Rev. 2.3 20.09.2013
IDW100E60
8µC
trr, REVERSE RECOVERY TIME
200ns
150ns
100ns
TJ=25°C
50ns
Qrr, REVERSE RECOVERY CHARGE
TJ=175°C
TJ=175°C
7µC
6µC
5µC
4µC
TJ=25°C
3µC
2µC
BDTIC
0ns
500A/µs
1000A/µs
0µC
500A/µs
1500A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 5. Typical reverse recovery time as
a function of diode current slope
(VR=400V, IF=100A,
Dynamic test circuit in Figure E)
1µC
1000A/µs
1500A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 6. Typical reverse recovery charge
as a function of diode current
slope
(VR = 400V, IF = 100A,
Dynamic test circuit in Figure E)
-1200A/µs
TJ=175°C
60A
50A
TJ=25°C
40A
30A
20A
10A
0A
500A/µs
1000A/µs
1500A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 7. Typical reverse recovery current
as a function of diode current
slope
(VR = 400V, IF = 100A,
Dynamic test circuit in Figure E)
dirr/dt, DIODE PEAK RATE OF FALL
OF REVERSE RECOVERY CURRENT
Irr, REVERSE RECOVERY CURRENT
70A
-1000A/µs
-800A/µs
TJ=25°C
-600A/µs
-400A/µs
-200A/µs
TJ=175°C
0A/µs
500A/µs
1000A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 8. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, IF=100A,
Dynamic test circuit in Figure E)
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IFAG IPC TD VLS
1500A/µs
4
Rev. 2.3 20.09.2013
ZthJC, TRANSIENT THERMAL IMPEDANCE
IDW100E60
D=0.5
-1
10 K/W
0.2
0.1
0.05
0.02
0.01
-2
R,(K/W)
0.03814
0.17186
0.09381
0.07453
0.02165
, (s)
0.3724
0.07367
6.877 E-3
4.143 E-4
4.145 E-5
R1
R2
10 K/W
BDTIC
C 1 =  1 /R 1 C 2 =  2 /R 2
single pulse
1µs
10µs 100µs 1ms 10ms 100ms
1s
tP, PULSE WIDTH
Figure 9. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
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IFAG IPC TD VLS
5
Rev. 2.3 20.09.2013
IDW100E60
BDTIC
www.BDTIC.com/infineon
IFAG IPC TD VLS
6
Rev. 2.3 20.09.2013
IDW100E60
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
BDTIC
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.
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IFAG IPC TD VLS
7
Rev. 2.3 20.09.2013