Download CJMNT32

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×2-6L-U Power Management Transistors- MOSFET
CJMNT32
PNP Power Transistor with N-MOSFET
DESCRIPTIONS
The CJMNT32 is PNP bipolar power transistor with
20V N-MOSFET.This device is suitable for use in charging
circuit and other power management.
DFNWB2×2-6L-U
1.EMITTER
2.BASE
D
3.DRAIN
FEATURE
z Ultra low collector-to-emitter saturation voltage
z High DC current gain
z Small package DFNWB2×2-6L-U
4.SOURCE
C
5.GATE
6.COLLECTOR
BDTIC
APPLICATION
z Charging circuit
z Other power management in portable equipment
C
MARKING：32
6
1
E
G
5
2
S
4
B
3
D
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
PNP Transistor
VCBO
Collector-Base Voltage
-32
V
VCEO
Collector-Emitter Voltage
-32
V
VEBO
Emitter-Base Voltage
-6
V
Collector Current-Continuous(Note1)
-1.5
A
Collector Current-Continuous(Note2)
-0.6
A
Collector Current-Pulse(Note3)
-4
A
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±5
V
Continuous Drain Current (note 1)
0.8
A
Collector Current-Continuous(Note2)
0.69
A
Collector Current-Pulse(Note3)
1.4
A
IC
ICM
N-MOSFET
ID
IDM
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Temperature and Thermal Resistance
178.6
℃/W
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
TL
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
260
℃
RθJA
Thermal Resistance from Junction to Ambient (note 2)
Tj
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
PNP Transistor
Collector-base breakdown voltage
V(BR)CBO
IC=-1mA,IE=0
-32
V
Collector-emitter breakdown
Emitter-base breakdown voltage
V(BR)CEO
IC=-10mA,IB=0
-32
V
V(BR)EBO
IE=-100uA,IC=0
-6
V
Collector cut-off current
ICBO
VCB=-30V,IE=0
Emitter cut-off current
IEBO
VEB=-5V,IC=0
DC current gain
hFE
VCE=-2V,IC=-0.5A
Collecor-emitter saturation voltage
VCE(sat)
IC=-0.5A,IB=-50mA
-0.35
V
Base-emitter saturation voltage
VBE(sat)
IC=-0.5A,IB=-50mA
-1.5
V
Base-emitter voltage
VBE(on)
VCE=-2V,IC=-500mA
-1.1
V
V(BR)DSS
VGS = 0V, ID =250µA
IDSS
VDS =16V,VGS = 0V
100
-0.1
uA
-0.1
uA
300
BDTIC
N-MOSFET
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
IGSS
VGS =±5V, VDS = 0V
Gate threshold voltage (note 3)
VGS(th)
VDS =VGS, ID =250µA
Drain-source on-resistance(note 3)
RDS(on)
20
VSD
100
nA
±1
uA
1.1
V
VGS =4.5V, ID =0.55A
600
mΩ
VGS =2.5V, ID =0.5A
650
mΩ
700
mΩ
1.1
V
0.44
VGS =1.8V, ID =0.35A
Diode forward voltage (note 3)
V
IS=0.35A, VGS = 0V
0.5
DYNAMIC PARAMETERS (note 4)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
61
VDS =10V,VGS =0V,f =100KHz
17
pF
pF
10
pF
SWITCHING PARAMETERS (note 4)
Turn-on delay time
td(on)
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
tf
Total Gate Charge
Qg
Gate-Source Chage
Qgs
Gage-Drain Charge
Qgd
VGEN=4.5V,VDD=10V,
ID=500mA,RGEN=6Ω
RL=10Ω
VDS=10V,VGS=4.5V
ID=0.6A
Notes :
1.Surface mounted on FR4 board using 1 square inch pad size,1oz copper.
2.Surface mounted on FR4 board using the minimum pad size,1oz copper.
3. Pulse test : Pulse width=300μs, duty cycle≤2%.
4. These parameters have no way to verify.
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33
ns
102
ns
790
ns
439
ns
1.15
nC
0.15
nC
0.23
nC
CJMNT32
Typical Characterisitics
PNP transistor
Static Characteristic
-0.60
COMMON
EMITTER
Ta=25℃
-0.50
-2.8mA
-0.45
IC
-2.4mA
-0.40
-2mA
-0.35
-1.6mA
-0.30
-0.25
-1.2mA
-0.20
-800uA
-0.15
—— IC
Ta=100℃
hFE
-3.2mA
300
DC CURRENT GAIN
(A)
-3.6mA
-4mA
-0.55
COLLECTOR CURRENT
hFE
1000
Ta=25℃
100
30
-0.10
IB=-400uA
-0.05
-0.00
-0.0
VCE=-2V
10
-0.5
-1.0
-1.5
-2.0
COLLECTOR-EMITTER VOLTAGE
VCEsat
-1000
——
-2.5
VCE
-3.0
-1
-10
(V)
-100
COLLECTOR CURRENT
IC
VBEsat
-2000
IC
-1000
(mA)
IC
——
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
-300
-1000
Ta=100℃
-100
Ta=25℃
-30
-10
Ta=25℃
Ta=100℃
-300
-3
β=10
-1
-1
β=10
-100
-3
-10
-100
-30
COLLECTOR CURRENT
VBE
-1500
IC
-300
-1000 -1500
-1
(mA)
-3
-30
-10
-100
COLLECTOR CURRENT
—— IC
Cob/ Cib
100
IC
-1000 -1500
-300
(mA)
—— VCB/ VEB
-1000
(pF)
Ta=100℃
30
Cob
C
-100
Ta=25℃
CAPACITANCE
COLLCETOR CURRENT
IC
(mA)
Cib
-300
-30
-10
10
3
f=1MHz
IE=0/IC=0
-3
-1
-200
VCE=-2V
-400
-600
-800
BASE-EMMITER VOLTAGE
fT
——
-1200
-1
-0.3
REVERSE VOLTAGE
(mV)
IC
TRANSITION FREQUENCY
fT
(MHz)
1000
-1000
VBE
Ta=25℃
1
-0.1
300
100
30
VCE=-10V
Ta=25℃
10
-1
-3
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-10
COLLECTOR CURRENT
-30
IC
(mA)
-100
-10
-3
V
(V)
-20
Typical Characteristics
CJMNT32
N-ch MOS
Output Characteristics
5
Transfer Characteristics
500
Ta=25℃
5.5V
VDS=16V
Pulsed
Pulsed
4.5V
4
400
(mA)
ID
3
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
3.5V
2.5V
2
1
300
Ta=100℃
200
Ta=25℃
100
VGS=1.5V
BDTIC
0
0.0
0.5
1.0
1.5
2.0
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
600
2.5
VDS
0
0.0
3.0
(V)
0.5
1.0
1.5
2.0
GATE TO SOURCE VOLTAGE
ID
RDS(ON)
500
——
2.5
VGS
VGS
Ta=25℃
Ta=25℃
Pulsed
Pulsed
VGS=1.8V
300
RDS(ON)
RDS(ON)
400
ON-RESISTANCE
(mΩ)
(mΩ)
500
3.0
(V)
ON-RESISTANCE
VGS=2.5V
VGS=4.5V
200
400
ID=600mA
300
100
0
100
200
200
400
600
DRAIN CURRENT
ID
1
800
IS —— VSD
500
3
4
VGS
5
(V)
Threshold Voltage
0.85
0.80
THRESHOLD VOLTAGE
VTH
IS (mA)
(V)
100
SOURCE CURRENT
2
GATE TO SOURCE VOLTAGE
(mA)
Ta=100℃
10
Pulsed
Ta=25℃
Pulsed
1
0.1
0.0
0.2
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
1.0
VSD (V)
1.2
0.75
ID=250uA
0.70
0.65
0.60
25
50
75
JUNCTION TEMPERATURE
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100
TJ
(℃ )
125