Download BDTIC IGBT4 – 650V, 1200V, 1700V State of the art IGBT technology

Product Brief
IGBT4 – 650V, 1200V, 1700V
BDTIC
State of the art IGBT technology
Infineon’s IGBT4 technology is available in three different voltage classes: 650V,
1200V and 1700V. Dynamic and static losses as well as switching speed and softness
of each device is balanced to fulfil the individual application requirements.
Main Features
„„ Increased power cycling capability
„„ Long lifetime
The Infineon IGBT trench gate structure has significantly improved the performance
of the IGBT in terms of VCEsat values. This feature in combination with the optimized
switching characteristics has made the power switches more efficient. Power modules
with IGBT4 are available with up to 50% higher current density compared to the
previous generation. In addition the technology of Infineon’s IGBT4 power modules
allows a 25K higher maximum operation junction temperature up to 150°C. This higher
operation temperature results in the potential of higher output power by utilizing the
full temperature swing under identical cooling conditions.
The optimization of the IGBT4 chip, the assembly and the contact technology within
the module lead to a noteworthy power cycling (PC) improvement. This improvement
offers an increased PC lifetime expectation.
Infineon’s IGBT4 chip technology with trench gate structure and field stop concept
combined with innovative packages provides the next step in robust and reliable
devices with highest power integration and lowest power losses.
„„ High reliability
„„ High short circuit capability up to
tp=10µs @Tvj=150°C
„„ Operating temperature up to
Tvjop=150°C
„„ Optimized switching characteristics
„„ Optimized tail current softness
„„ Reduced switching losses
„„ Higher RMS current possible
„„ Standard packages with higher
current capability
„„ Wide product range offers the best
possible solution for any application
Applications
„„ Industrial drives
„„ Traction inverters in Subways,
Trams & Trolleybuses
„„ UPS & Power Supplies
„„ Renewable energy systems in Solar
and Wind Power
„„ CAV – commercial, agriculture and
construction vehicles
„„ … and further more
www.infineon.com/IGBTmodules
www.BDTIC.com/infineon
Product Brief
650V IGBT4
650V IGBT4 - E4
The 650V IGBT4 - E4 is an optimized chip version designed to fulfil high currrent
application requirements. The soft turn-off behaviour reduces the EMI effort. The
lower overvoltage is the result of a reduced turn-off current slope di/dt. In combination
with a higher blocking capability of VCES=650V the E4 version provides a significant
advantage for the application. The high short circuit capability of tp=10µs comes as
a real surplus for a robust design.
IGBT4
Trench + Field-Stop
emitter
gate
-E
Typical turn-off switching curve
of an power module equipped with
the 650V IGBT4
BDTIC
n- basis (substrate)
implanted fieldstop
collector
Advantages
Increased efficiency
of the back side p-emitter
■ Optimized chip thickness
■ Reduces MOS channel width
■
650V - E4 features:
„„ Reduced EMI effort as the result of an improved softness during turn-off
„„ Low overshoot voltage as the result of a reduced turn-off current slope di/dt
„„ High blocking capability VCES=650V for operation at increased DC-link voltages and/or
operation at higher parasitic inductances
„„ Short circuit robustness with 10µs pulse time @Tvjop=150°C
„„ An ideal flexibility between highest output power at elevated junction temperature of
up to Tvjop=150°C or highest power cycling capabilities at lower junction temperatures
Performance
Increased blocking capability
■ Increased softness
■ High SC1 robustness
■
www.BDTIC.com/infineon
Product Brief
1200V & 1700V IGBT4
1200V IGBT4 – T4 – E4 – P4
The 1200V IGBT4 is available in three optimized chip versions. These chip versions are
the IGBT4-T4 chip with fast switching behavior for power modules with Inom=10A-300A,
the IGBT4-E4 chip with optimized switching and on state characteristic for power
modules with Inom=150A-900A and the IGBT4-P4 chip with soft switching behavior for
power modules with Inom>900A.
The improved softness of the high power IGBT4-P4 chip simplifies the use and
controllability for high power applications. On equal conditions the T4, E4 & P4 IGBT4
chips offer reduced total losses in comparison to the previous generation.
IGBT4
Trench + Field-Stop
emitter
gate
-E
BDTIC
n- basis (substrate)
implanted fieldstop
collector
Advantages
Implanted back side
P-emitter
■ Implanted field-stop
enables thinner base region
■
Turn-off switching curves of the three IGBT versions; T4 left, E4 middle, P4 right
1700V IGBT4 – E4 – P4
The 1700V IGBT4 is available in two optimized chip versions. These chip versions
are the IGBT4-E4 chip with optimized switching and on state characteristic for power
modules with Inom=100A-1000A and the IGBT4-P4 chip with soft switching behavior for
power modules with Inom>900A.
The improved softness of the high power IGBT4-P4 chip simplifies the use and
controllability for high power applications.
Performance
■ Low V
CEsat
■ Lower switching losses
■ Increased softness
■ Robustness like NPT
Typical turn-off switching curve of the power module equipped with 1700V IGBT4-P4
www.BDTIC.com/infineon
Product Brief
Overview IGBT4 Product Portfolio
Class
Type
Blocking Voltage
Current Range
Low Power IGBT Modules
EasyPIM™, EasyPACK, SmartPIM
SmartPACK, MIPAQ™, EconoPIM™, EconoPACK™
650V, 1200V
6A … 200A
Medium Power IGBT Modules
EconoPACK™ 4, EconoPACK™ +
EconoDUAL™, 34mm, 62mm
650V, 1200V
1700V
50A … 900A
High Power IGBT Modules
PrimePACK™, IHM
1200V, 1700V
450A … 3600A
BDTIC
Low Power IGBT Modules
Medium Power IGBT Modules
High Power IGBT Modules
Attention please!
The information given in this document shall in no event
be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples
or hints given herein, any typical values stated herein and/
or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation
warranties of non-infringement of intellectual property
rights of any third party.
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2014 Infineon Technologies AG.
All Rights Reserved.
Visit us:
www.infineon.com
Order Number: B133-H9595-G3-X-7600
Date: 05 / 2014
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only
be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause
the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons
may be endangered.
www.BDTIC.com/infineon