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Transcript
A Product Line of
Diodes Incorporated
ZXTP19020DZ
20V PNP HIGH GAIN TRANSISTOR IN SOT89
Features
Mechanical Data
•
•
•
•
•
•
•
•
•
•
•
•
•
•
BVCEO > -20V
High current capability Max Continuous Current IC = -6A
Low saturation voltage VCE(sat) < -47mV @ IC = -1A
RCE(sat) = 28mΩ
PD = 2.4W
Complementary part number ZXTN19020DZ
Lead Free, RoHS Compliant (Note 1)
Halogen and Antimony Free, “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT89
Moisture Sensitivity: Level 1 per J-STD-020
UL Flammability Rating 94V-0
Terminals: Matte Tin Finish
Weight: 0.052 grams (Approximate)
Application
•
•
•
•
Power disconnect switch
Battery chargers
High side drivers
Motor drive
C
SOT89
E
B
C
C
B
E
Top View
Device symbol
Pin-out Top
Ordering Information (Note 3)
Product
ZXTP19020DZTA
Notes:
Marking
1M1
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
1. No purposefully added lead.
2. Halogen and Antimony Free. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
1M1
1M1 = Product Type Marking Code
www.BDTIC.com/DIODES
ZXTP19020DZ
Datasheet Number: DS33733 Rev. 2 - 2
1 of 7
www.diodes.com
November 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP19020DZ
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Emitter-Base Voltage
Continuous Collector Current (Note 6)
Base current
Peak Pulse Current
Symbol
VCBO
VCEO
VECO
VEBO
IC
IB
ICM
Value
-25
-20
-4
-7
-6
-1
-15
Unit
V
V
V
V
A
A
A
Value
1.1
8.8
1.8
14.4
2.4
19.2
4.46
35.7
26.7
213
117
68
51
117
4.69
-55 to +150
Unit
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Linear derating factor
Power Dissipation (Note 5)
Linear derating factor
Power Dissipation (Note 6)
Linear derating factor
Power Dissipation (Note 7)
Linear derating factor
Power Dissipation (Note 8)
Linear derating factor
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range
Notes:
Symbol
PD
PD
PD
PD
PD
RθJA
RθJA
RθJA
RθJA
RθJL
TJ, TSTG
4. For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
5. Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
7. As note 6 above measured at t<5 seconds.
8. Junction to case (collector tab). Typical
VCE(sat)
10 Limited
1
DC
1s
100ms
100m Single Pulse
T amb=25°C
10ms
1ms
100µs
50mm X 50mm 2oz Cu
10m
100m
1
10
-VCE Collector-Emitter Voltage (V)
Max Power Dissipation (W)
-IC Collector Current (A)
Thermal Characteristics
2.4
50mm X 50mm
2oz Cu
2.0
25mm X 25mm
1.6
1oz Cu
1.2
15mmX15mm
1oz Cu
0.8
0.4
0.0
0
Safe Operating Area
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
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ZXTP19020DZ
Datasheet Number: DS33733 Rev. 2 - 2
2 of 7
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November 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP19020DZ
120
100
T amb=25°C
100
Maximum Power (W)
Thermal Resistance (°C/W)
Thermal Characteristics (- Continued)
15mm X 15mm
1oz Cu
80
D=0.5
60
40
D=0.2
Single Pulse
20
D=0.05
0
100µ
D=0.1
1m
10m 100m
1
10
100
Single Pulse
T amb=25°C
15mm X 15mm
1oz Cu
10
1
100µ
1k
1m
Pulse Width (s)
10
100
1k
Pulse Width (s)
100
70
T amb=25°C
Maximum Power (W)
Thermal Resistance (°C/W)
1
Pulse Power Dissipation
Transient Thermal Impedance
60 25mm X 25mm
1oz Cu
50
40 D=0.5
30
Single Pulse
20 D=0.2
D=0.05
10
Single Pulse
T amb=25°C
25mm X 25mm
1oz Cu
10
D=0.1
0
100µ
1m
10m 100m
1
10
100
1
100µ
1k
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
100
50
T amb=25°C
40
50mmX 50mm
2oz Cu
Maximum Power (W)
Thermal Resistance (°C/W)
10m 100m
30 D=0.5
20
Single Pulse
D=0.2
D=0.05
10
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
Single Pulse
T amb=25°C
50mmX 50mm
2oz Cu
10
1
100µ
1m
10m 100m
1
10
100
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
www.BDTIC.com/DIODES
ZXTP19020DZ
Datasheet Number: DS33733 Rev. 2 - 2
1k
3 of 7
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November 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP19020DZ
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Notes 9)
Emitter-Collector breakdown voltage
(reverse blocking)
Emitter-Collector breakdown voltage
(reverse blocking)
Emitter-Base Breakdown Voltage
Symbol
BVCBO
BVCEO
Min
-25
-20
Typ.
-55
-50
Max
-
Unit
V
V
BVECX
-4
-8.6
-
V
BVECO
-4
-8.6
-
V
IE = -100µA
BVEBO
-7
300
200
65
-
-50
-500
-50
900
-47
-130
-145
-275
-1100
-1000
V
IE = -100µA
VCB = -25V
VCB = -25V, TA = 100°C
VEB = -5.6V
IC = -100mA, VCE = -2V
IC = -2A, VCE = -2V
IC = -6A, VCE = -2V
IC = -15A, VCE = -2V
IC = -1A, IB = -100mA
IC = -1A, IB = -10mA
IC = -2A, IB = -40mA
IC = -6A, IB = -300mA
IC = -6A, IB = -300mA
IC = -6A, VCE = -2V
IC = -50mA, VCE = -10V,
f = 50MHz
VEB = -0.5V, f = 1MHz
VCB = -10V, f = 1MHz
Collector-Emitter Saturation Voltage (Notes 9)
VCE(sat)
Base-Emitter Saturation Voltage (Notes 9)
Base-Emitter Turn-on Voltage (Notes 9)
VBE(sat)
VBE(on)
-
-8.2
< -1
< -1
450
290
110
25
-40
-100
-115
-225
-1000
-865
fT
-
176
-
MHz
Cibo
Cobo
td
tr
ts
tf
-
36
23
18.4
266
49.6
400
45
-
pF
pF
ns
ns
ns
ns
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC current transfer Static ratio (Notes 9)
hFE
-
Transitional Frequency (Notes 9)
Input Capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
Notes:
nA
nA
-
mV
mV
mV
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA, RBC < 1kΩ or
0.25V > VBC > -0.25V
VCC = -10V, IC = -1A,
IB1 = -IB2 =-50mA
9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤2%.
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ZXTP19020DZ
Datasheet Number: DS33733 Rev. 2 - 2
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ZXTP19020DZ
Typical Electrical Characteristics
1
0.4
Tamb=25°C
IC/IB=10
IC/IB=100
- VCE(SAT) (V)
- VCE(SAT) (V)
0.3
100m
IC/IB=50
10m
IC/IB=20
0.2
150°C
100°C
0.1
25°C
IC/IB=10
1m
1m
10m
100m
1
- IC Collector Current (A)
-55°C
0.0
10m
10
100m
1
- IC Collector Current (A)
10
VCE(SAT) v IC
VCE(SAT) v IC
1.2
150°C
800
100°C
600
1.0
500
0.8 25°C
400
0.6
300
0.4 -55°C
0.2
200
0.0
1m
1.0
- VBE(SAT) (V)
1.4
1.2
IC/IB=10
700
Typical Gain (hFE)
Normalised Gain
1.6
VCE=2V
25°C
-55°C
0.8
0.6
150°C
100°C
0.4
100
10m
100m
1
- IC Collector Current (A)
10
0.2
1m
0
10m
100m
1
- IC Collector Current (A)
hFE v IC
10
VBE(SAT) v IC
1.2
100
1.0
-55°C
- VBE(ON) (V)
25°C
0.8
0.6
150°C
0.4
100°C
0.2
1m
10m
100m
1
- IC Collector Current (A)
Capacitance (pF)
VCE=2V
f = 1MHz
80
60
40
20
10
0
Cobo
2
4
6
8
10 12 14 16 18 20
- Voltage(V)
Capacitance v Voltage
VBE(ON) v IC
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ZXTP19020DZ
Datasheet Number: DS33733 Rev. 2 - 2
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A Product Line of
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ZXTP19020DZ
Package Outline Dimensions
R0
D1
.2
00
C
E
SOT89
Dim
Min
Max
A
1.40
1.60
B
0.44
0.62
B1
0.35
0.54
C
0.35
0.43
D
4.40
4.60
D1
1.52
1.83
E
2.29
2.60
e
1.50 Typ
e1
3.00 Typ
H
3.94
4.25
L
0.89
1.20
All Dimensions in mm
H
L
B
e
B1
e1
8°
(4 X
)
A
D
Suggested Pad Layout
X1
X2 (2x)
Y1
Y3
Y4
Y2
Y
C
Dimensions Value (in mm)
X
0.900
X1
1.733
X2
0.416
Y
1.300
Y1
4.600
Y2
1.475
Y3
0.950
Y4
1.125
C
1.500
X (3x)
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ZXTP19020DZ
Datasheet Number: DS33733 Rev. 2 - 2
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© Diodes Incorporated
A Product Line of
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ZXTP19020DZ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
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ZXTP19020DZ
Datasheet Number: DS33733 Rev. 2 - 2
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November 2011
© Diodes Incorporated