Download MMST4403 Features Mechanical Data

MMST4403
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
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Epitaxial Planar Die Construction
Complementary NPN Type Available (MMST4401)
Ultra-Small Surface Mount Package
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
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Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Weight: 0.006 grams (approximate)
SOT-323
Top view
Ordering Information
(Note 3)
Packaging
SOT-323
Device
MMST4403-7-F
Notes:
Pinout – top view
Device symbol
Shipping
3000/Tape & Reel
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
K3T
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
2011
Y
Feb
2
Mar
3
YM
Marking Information
K3T = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
2012
Z
Apr
4
2013
A
May
5
Jun
6
2014
B
Jul
7
2015
C
Aug
8
Sep
9
2016
D
Oct
O
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MMST4403
Datasheet number: DS30083 Rev. 8 - 2
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E
Nov
N
Dec
D
June 2011
© Diodes Incorporated
MMST4403
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
VEBO
-5.0
V
Collector Current – Continuous (Note 4)
IC
-600
mA
Power Dissipation (Note 4)
Pd
200
mW
RθJA
625
K/W
Tj, TSTG
-55 to +150
°C
Emitter-Base Voltage
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range
Notes:
4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch;
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
-40
⎯
V
IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40
⎯
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
⎯
V
IE = -100μA, IC = 0
ICEX
⎯
-100
nA
VCE = -35V, VEB(OFF) = -0.4V
IBL
⎯
-100
nA
VCE = -35V, VEB(OFF) = -0.4V
hFE
30
60
100
100
20
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
Base-Emitter Saturation Voltage
VBE(SAT)
-0.75
⎯
⎯
⎯
⎯
300
⎯
-0.40
-0.75
-0.95
-1.30
Output Capacitance
Cob
⎯
8.5
pF
VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance
Ceb
⎯
30
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.5
15
kΩ
Voltage Feedback Ratio
hre
0.1
8.0
x 10
Small Signal Current Gain
hfe
60
500
⎯
Output Admittance
hoe
1.0
100
μS
fT
200
⎯
MHz
Delay Time
td
⎯
15
ns
Rise Time
tr
⎯
20
ns
Storage Time
ts
⎯
225
ns
Fall Time
tr
⎯
30
ns
OFF CHARACTERISTICS (Note 5)
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
IC =
IC =
IC =
IC =
IC =
IC =
IC =
IC =
IC =
⎯
V
V
-100μA, VCE = -1.0V
-1.0mA, VCE = -1.0V
-10mA, VCE = -1.0V
-150mA, VCE = -2.0V
-500mA, VCE = -2.0V
-150mA, IB = -15mA
-500mA, IB = -50mA
-150mA, IB = -15mA
-500mA, IB = -50mA
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwith Product
-4
VCE = -10V, IC = -1.0mA,
f = 1.0MHz
VCE = -10V, IC = -20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Notes:
VCE = -30V, IC = -150mA,
VBE(OFF) = -2.0V, IB1 = -15mA
VCE = -30V, IC = -150mA,
IB1 = IB2 = -15mA
5. Short duration pulse test used to minimize self-heating effect
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MMST4403
Datasheet number: DS30083 Rev. 8 - 2
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MMST4403
1,000
300
hFE, DC CURRENT GAIN
PD, POWER DISSIPATION (mW)
350
250
200
150
100
100
10
50
0
1
1
50
75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
30
0
25
Cibo
10
5.0
Cobo
1.0
-0.1
-1.0
-10
REVERSE VOLTS (V)
Fig. 3 Typical Capacitance
1.2
I C = 10mA
IC = 1mA
I C = 100mA I = 300mA
C
IC = 30mA
1.0
0.8
0.6
0.4
0.2
1
0.1
10
100
0.01
IB BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
1,000
IC
IB = 10
VBE(ON), BASE EMITTER VOLTAGE (V)
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
1.4
0
0.001
-30
0.5
0.4
TA = 25°C
0.3
TA = 150°C
0.2
0.1
T A = 50°C
0
1.6
VCE COLLECTOR-EMITTER VOLTAGE (V)
CAPACITANCE (pF)
20
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 2 DC Current Gain vs. Collector Current
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 5 Collector Emitter Saturation Voltage
vs. Collector Current
0.2
0.1
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 6 Base-Emitter Voltage
vs. Collector Current
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MMST4403
Datasheet number: DS30083 Rev. 8 - 2
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MMST4403
fT, GAIN BANDWIDTH PRODUCT (MHz)
1,000
100
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 7 Gain Bandwidth Product vs. Collector Current
Package Outline Dimensions
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MMST4403
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MMST4403
Suggested Pad Layout
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other
changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising
out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under
its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such
applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are
represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales
channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall
indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising
out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and
markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the
express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
B.
Life support devices or systems are devices or systems which:
1.
are intended to implant into the body, or
2.
support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling can be reasonably expected to result in significant injury to the user.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems,
and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their
products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes
Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life
support devices or systems.
Copyright © 2011, Diodes Incorporated
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www.BDTIC.com/DIODES
MMST4403
Datasheet number: DS30083 Rev. 8 - 2
5 of 5
www.diodes.com
June 2011
© Diodes Incorporated