Download KSH45H11 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings

KSH45H11
KSH45H11
General Purpose Power and Switching Such
as Output or Driver Stages in Applications
D-PAK for Surface Mount Applications
•
•
•
•
•
Lead Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, “- I” Suffix)
Electrically Similar to Popular KSE45H
Fast Switching Speeds
Low Collector Emitter Saturation Voltage
D-PAK
1
1.Base
I-PAK
1
2.Collector
3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCEO
Parameter
Value
- 80
Collector-Emitter Voltage
Units
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current (DC)
-8
A
ICP
Collector Current (Pulse)
- 16
A
PC
Collector Dissipation (TC=25°C)
20
W
Collector Dissipation (Ta=25°C)
1.75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
Test Condition
IC = - 30mA, IB = 0
Min.
- 80
Typ.
Max.
Units
V
ICEO
Collector Cut-off Current
VCE = - 80V, IB = 0
- 10
µA
IEBO
Emitter Cut-off Current
VBE = - 5V, IC = 0
- 50
µA
hFE
DC Current Gain
VCE = - 1V, IC = - 2A
VCE = - 1V, IC = - 4A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = - 8A, IB = - 0.4A
-1
V
VBE(on)
Base-Emitter Saturation Voltage
IC = - 8A, IB = - 0.8A
- 1.5
V
60
40
fT
Current Gain Bandwidth Product
VCE= - 10A, IC = - 0.5A
40
MHz
Cob
Collector Capacitance
VCB = - 10V, f = 1MHz
230
pF
tON
Turn On Time
135
ns
tSTG
Storage Time
IC = - 5A
IB1= - IB2 = - 0.5A
500
ns
tF
Fall Time
100
ns
* Pulse Test: PW≤300µs, Duty Cycle≤2%
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©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH45H11
Typical Characteristics
-100
1000
IC[A], COLLECTOR CURRENT
hFE, DC CURRENT GAIN
VCE = -1V
100
10
ICP (max)
10
-10
50
IC(max)
1m
5m
DC
-1
0µ
0µ
s
s
s
s
-0.1
-0.01
1
-0.01
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
-1
-10
-100
-1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. DC current Gain
Figure 2. Safe Operating Area
PC[W], POWER DISSIPATION
25
20
15
10
5
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 3. Power Derating
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©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH45H11
Package Dimensions
D-PAK
0.50 ±0.10
MIN0.55
0.91 ±0.10
0.76 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30TYP
[2.30±0.20]
(2XR0.25)
(1.00)
(3.05)
6.10 ±0.20
2.70 ±0.20
9.50 ±0.30
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(0.70)
2.30 ±0.20
(0.90)
6.10 ±0.20
2.30 ±0.10
(0.10)
2.30TYP
[2.30±0.20]
(0.50)
0.89 ±0.10
MAX0.96
(4.34)
2.70 ±0.20
0.80 ±0.20
0.60 ±0.20
(0.50)
9.50 ±0.30
5.34 ±0.30
0.70 ±0.20
6.60 ±0.20
0.76 ±0.10
Dimensions in Millimeters
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©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH45H11
Package Dimensions (Continued)
I-PAK
2.30 ±0.20
6.60 ±0.20
5.34 ±0.20
2.30TYP
[2.30±0.20]
±0.20
±0.30
16.10
±0.20
±0.30
9.30
0.76 ±0.10
1.80
0.80
MAX0.96
0.50 ±0.10
6.10
±0.20
(0.50)
0.70
(4.34)
±0.10
0.60
±0.20
(0.50)
2.30TYP
[2.30±0.20]
0.50 ±0.10
Dimensions in Millimeters
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©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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©2002 Fairchild Semiconductor Corporation
Rev. I1