Download KSC233 4 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings

KSC2334
KSC2334
High Speed Switching Industrial Use
• Complement to KSA1010
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
TO-220
1
NPN Epitaxial Silicon Transistor
1.Base
2.Collector
Parameter
Collector-Base Voltage
3.Emitter
Value
150
Units
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current (DC)
7
A
ICP
*Collector Current (Pulse)
15
A
IB
Base Current (DC)
3.5
A
PC
Collector Dissipation (TC=25°C)
40
W
Collector Dissipation (TA=25°C)
1.5
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
Test Condition
IC = 5A, IB1= 0.5A, L = 1mH
Min.
100
Max.
Units
V
VCEX(sus)1
Collector-Emitter Sustaining Voltage
IC = 5A, IB1 = -IB2 = 0.5A
VBE(off) = -5V, L = 180µH, Clamped
100
V
VCEX(sus)2
Collector-Emitter Sustaining Voltage
IC = 10A, IB1 =1A, IB2 = -0.5A,
VBE(off) = -5V, L = 180µH, Clamped
100
V
ICBO
Collector Cut-off Current
VCB = 100, IE = 0
ICER
Collector Cut-off Current
VCE = 100V, RBE = 51Ω@TC =125°C
ICEX1
ICEX2
Collector Cut-off Current
VCE = 100V, VBE(off) = -1.5V
VCE = 100V, VBE(off) = -1.5V
@ TC= 125°C
10
µA
1
mA
10
1
µA
mA
10
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
hFE1
hFE2
hFE3
* DC Current Gain
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 3A
VCE = 5V, IC = 5A
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 5A, IB = 0.5A
0.6
VBE(sat)
* Base-Emitter Saturation Voltage
IC = 5A, IB = 0.5A
1.5
V
tON
Turn On Time
0.5
µs
tSTG
Storage Time
0.5
µs
tF
Fall Time
VCC = 50V, IC = 5A
IB1 = -IB2 = 0.5A
RL = 10Ω
1.5
µs
40
40
20
240
V
* Pulse Test: PW≤350µs, Duty Cycle≤2%Pulsed
hFE Classification
Classification
R
O
Y
hFE2
40 ~ 80
70 ~ 140
120 ~ 240
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©2001 Fairchild Semiconductor Corporation
Rev. A1, August 2001
KSC2334
4
1000
IB = 90mA
VCE = 5V
IB = 70mA
IB = 80mA
IB = 60mA
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
5
IB =
100
mA
Typical Characteristics
IB = 50mA
3
IB = 40mA
IB = 30mA
2
IB = 20mA
1
100
10
IB = 10mA
1
0.01
0
0
1
2
3
4
5
0.1
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 2. DC current Gain
10
100
IC/IB = 10
V BE(sat)
1
0.1
V CE(sat)
0.01
0.01
0.1
1
50
µs
10
0
30 µs
0µ
s
10
Di
Lim ssip
ite atio
d n
1m
s
10
ms
10
0m
s
1
d
ite
m
Li
IC[A], COLLECTOR CURRENT
IC MAX. (Pulse)
b
S/
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
0.1
0.01
10
1
10
IC[A], COLLECTOR CURRENT
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Safe Operating Area
160
50
45
PC[W], POWER DISSIPATION
140
120
dT(%), Ic DERATING
1
100
80
S/b Limited
60
Dissipation Limited
40
20
40
35
30
25
20
15
10
5
0
0
0
25
50
75
100
125
150
175
200
o
TC[ C], CASE TEMPERATURE
Figure 5. Derating Curve of Safe Operating Areas
0
25
50
75
100
125
150
175
200
225
250
o
TC[ C], CASE TEMPERATURE
Figure 6. Power Derating
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©2001 Fairchild Semiconductor Corporation
Rev. A1, August 2001
KSC2334
Package Demensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
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©2001 Fairchild Semiconductor Corporation
Rev. A1, August 2001
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
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Not In Production
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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©2001 Fairchild Semiconductor Corporation
Rev. H3