Download FJA4210 PNP Epitaxial Silicon Transistor F JA

FJA4210
PNP Epitaxial Silicon Transistor
•
•
•
•
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Audio Power Amplifier
High Current Capability : IC= -10A
High Power Dissipation
Wide S.O.A
Complement to FJA4310
TO-3P
1
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings*
T a = 25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
IB
PC
Ratings
-200
Units
V
-140
V
-6
V
Collector Current (DC)
-10
A
Base Current (DC)
-1.5
A
Collector Dissipation (TC =25°C)
100
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=-5mA, IE=0
Min.
-200
BVCEO
Collector-Emitter Breakdown Voltage
IC=-50mA, R BE=¥
-140
BVEBO
Emitter-Base Breakdown Voltage
IE=-5mA, IC=0
ICBO
Collector Cut-off Current
VCB=-200V, IE=0
IEBO
Emitter Cut-off Current
hFE
* DC
Typ.
VCE=-4V, IC=-3A
Units
V
V
-6
V
VEB=-6V, IC=0
Current Gain
Max.
50
-10
mA
-10
mA
180
VCE(sat)
Collector-Emitter Saturation Voltage
IC=-5A, IB=-0.5A
Cob
Output Capacitance
VCB=-10V, f=1MHz
400
pF
VCE=-5V, IC=-1A
30
MHz
fT
Current Gain Bandwidth
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
Product
-0.5
V
hFE Classification
Classification
R
O
Y
hFE
50 ~ 100
70 ~ 140
90 ~ 180
© 2008 Fairchild Semiconductor Corporation
FJA4210 Rev. C1
www.fairchildsemi.com
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FJA4210 — PNP Epitaxial Silicon Transistor
October 2008
IB = - 300mA
-10
1000
VCE = - 4 V
-8
IB = - 200mA
-7
IB = - 150mA
-6
IB = - 100mA
o
hFE, DC CURRENT GAIN
-9
IC [A], COLLECTOR CURRENT
IB = - 250mA
IB = - 400mA
-5
IB = - 50mA
-4
-3
IB = - 20mA
-2
Ta = 25 C
o
Ta = 125 C
100
o
Ta = - 25 C
-1
-0
-0
-1
-2
-3
10
-0.1
-4
-1
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characterstic
Figure 2. DC current Gain
-3.0
-1
IC = 10 IB
VCE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
-10
-2.5
-2.0
-1.5
-1.0
IC= - 10A
-0.5
-0.0
-0.0
IC= - 5A
-0.4
-0.8
-1.2
-1.6
-0.1
o
Ta = 125 C
o
Ta = 25 C
o
Ta = - 25 C
-0.01
-0.01
-2.0
-0.1
-1
-10
IC [A], COLLECTOR CURRENT
IB [A], BASE CURRENT
Figure 3. VCE(sat) vs. IB Characteristics
Figure 4. Collector-Emitter Saturation Voltage
-10
-8
-6
o
Ta = 25 C
-4
-2
o
Ta = 125 C
o
Ta = - 25 C
-0
-0.0
-10
-1.0
-1.5
-2.0
IC (DC)
t=100ms
-1
o
TC = 25 C
Single Pulse
-0.1
-0.5
-10
-100
VCE [V], COLLECTOR-EMITTER VOLTAGE
VBE [V], Base-Emitter On VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Forward Bias Safe Operating Area
© 2008 Fairchild Semiconductor Corporation
FJA4210 Rev. C1
t=10ms
IC (Pulse)
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
VCE = - 4 V
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FJA4210 — PNP Epitaxial Silicon Transistor
Typical Characteristics
FJA4210 — PNP Epitaxial Silicon Transistor
Typical Characteristics (Continued)
PC[W], COLLECTOR POWER DISSIPATION
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
© 2008 Fairchild Semiconductor Corporation
FJA4210 Rev. C1
www.fairchildsemi.com
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www.BDTIC.com/FAIRCHILD
FJA4210 — PNP Epitaxial Silicon Transistor
Package Dimension (TO-3P)
5.00
4.60
15.80
15.40
1.65
1.45
5.20
4.80
(R0.50)
20.10
19.70
18.90
18.50
3.70
3.30
(1.85)
2.20
1.80
2.60
2.20
20.30
19.70
3.20
2.80
0.55
1.20
0.80
1
3
5.45
0.75
0.55
5.45
(R0.50)
NOTES:
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONING AND TOLERANCING PER
ASME14.5 1973.
D) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
E) DRAWING FILE NAME: TO3P03AREV2.
© 2008 Fairchild Semiconductor Corporation
FJA4210 Rev. C1
www.fairchildsemi.com
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HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
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PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.
2.
Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
A critical component is any component of a life support
device or system whose failure to perform can be reasonably
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31
© 2008 Fairchild Semiconductor Corporation
FJA4210 Rev. C1
www.fairchildsemi.com
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FJA4210 PNP Epitaxial Silicon Transistor
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