Download FDS4465 P-Channel 1.8V Specified PowerTrench MOSFET

FDS4465
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
• –13.5 A, –20 V. RDS(ON) = 8.5 mΩ @ VGS = –4.5 V
RDS(ON) = 10.5 mΩ @ VGS = –2.5 V
RDS(ON) = 14 mΩ @ VGS = –1.8 V
• Fast switching speed
Applications
• High performance trench technology for extremely
low RDS(ON)
• Power management
• Load switch
• High current and power handling capability
• Battery protection
DD
DD
DD
DD
G
SS G
S
SS S
SO-8
Pin 1 SO-8
Absolute Maximum Ratings
Symbol
5
4
6
3
7
2
8
1
o
TA=25 C unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
–20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
–13.5
A
– Continuous
(Note 1a)
– Pulsed
–50
Power Dissipation for Single Operation
PD
TJ, TSTG
(Note 1a)
2.5
(Note 1b)
1.5
(Note 1c)
1.2
Operating and Storage Junction Temperature Range
–55 to +175
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4465
FDS4465
13’’
12mm
2500 units
2012 Fairchild Semiconductor Corporation
FDS4465 Rev C2 (W)
FDS4465
December 2012
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
VGS = 0 V, ID = –250 µA
–20
V
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = –250 µA, Referenced to 25°C
VDS = –16 V,
VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 8 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –8 V,
VDS = 0 V
–100
nA
–1.5
V
On Characteristics
–12
mV/°C
(Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
ID(on)
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V
gFS
Forward Transconductance
VDS = –5 V,
ID = –13.5 A
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
–0.4
–0.6
3
6.7
8.0
9.8
9.0
VGS = –4.5 V,
ID = –13.5 A
ID = –12 A
VGS = –2.5 V,
ID = –10.5 A
VGS = –1.8 V,
VGS=–4.5 V, ID =–13.5A, TJ=125°C
mV/°C
8.5
10.5
14
13
–50
mΩ
A
70
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
8237
pF
1497
pF
750
0.1
pF
3.0
6.0
Ω
ns
(Note 2)
20
36
24
38
ns
Turn–Off Delay Time
300
480
ns
tf
Turn–Off Fall Time
140
224
ns
Qg
Total Gate Charge
86
120
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = –10V,
VGS = –4.5 V,
VDS = –10 V,
VGS = –4.5 V
ID = –1 A,
RGEN = 6 Ω
ID = –13.5 A,
20
nC
11
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = –2.1 A
Voltage
(Note 2)
–0.6
–2.1
A
–1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50 °C/W when
2
mounted on a 1in
pad of 2 oz copper
b) 105 °C/W when
2
mounted on a .04 in
pad of 2 oz copper
c) 125 °C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS4465 Rev C2 (W)
FDS4465
Electrical Characteristics
FDS4465
Typical Characteristics
50
3
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -4.5V
-ID, DRAIN CURRENT (A)
-2.0V
40
-2.5V
-1.5V
-1.8V
30
20
10
0
2.6
2.2
VGS = -1.5V
1.8
-1.8V
-2.0V
1.4
-2.5V
-4.5V
1
0.6
0
0.5
1
1.5
0
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
40
50
0.025
ID = -13.5A
VGS = -10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
30
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.8
0.6
ID = -6.3A
0.02
0.015
TA = 125oC
0.01
TA = 25oC
0.005
0
-50
-25
0
25
50
75
100
125
150
175
0
1
TJ, JUNCTION TEMPERATURE (oC)
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
100
-IS, REVERSE DRAIN CURRENT (A)
VDS = -5.0V
-ID, DRAIN CURRENT (A)
20
-ID, DRAIN CURRENT (A)
40
30
20
TA = 125oC
o
25 C
10
-55oC
0
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0.5
1
1.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4465 Rev C2 (W)
FDS4465
Typical Characteristics
10000
VDS = -5V
ID = -13.5A
4
8000
-15V
3
2
6000
4000
1
2000
0
0
COSS
CRSS
0
20
40
60
80
100
0
5
Qg, GATE CHARGE (nC)
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
100
P(pk), PEAK TRANSIENT POWER (W)
100µs
1ms
RDS(ON) LIMIT
10ms
10
100ms
1s
10s
1
DC
VGS = -4.5V
SINGLE PULSE
RθJA = 125oC/W
0.1
TA = 25oC
0.01
0.1
1
10
100
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
0.01
0.1
1
10
100
t1, TIME (sec)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
-ID, DRAIN CURRENT (A)
f = 1 MHz
VGS = 0 V
CISS
-10V
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
5
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
0.2
0.1
o
RθJA = 125 C/W
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4465 Rev C2 (W)
FDS4465
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
The Power Franchise®
F-PFS™
PowerTrench®
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®
PowerXS™
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Programmable Active Droop™
Global Power ResourceSM
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Green Bridge™
QFET®
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Gmax™
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CROSSVOLT™
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™
TINYOPTO™
CTL™
IntelliMAX™
TinyPower™
Saving our world, 1mW/W/kW at a time™
Current Transfer Logic™
ISOPLANAR™
TinyPWM™
®
DEUXPEED
Marking Small Speakers Sound Louder SignalWise™
TinyWire™
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Dual Cool™
and Better™
TranSiC®
EcoSPARK®
SMART START™
MegaBuck™
TriFault Detect™
EfficentMax™
Solutions for Your Success™
MICROCOUPLER™
TRUECURRENT®*
ESBC™
SPM®
MicroFET™
μSerDes™
STEALTH™
MicroPak™
®
SuperFET®
MicroPak2™
®
SuperSOT™-3
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UHC®
SuperSOT™-6
MotionMax™
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Ultra
SuperSOT™-8
Motion-SPM™
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FACT®
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SyncFET™
OptoHiT™
FAST®
VisualMax™
Sync-Lock™
OPTOLOGIC®
FastvCore™
VoltagePlus™
®*
OPTOPLANAR®
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FlashWriter® *
®
FPS™
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2.
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Definition of Terms
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Rev. I61