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FDS2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.0 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V • Low gate charge • Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. • High performance trench technology for extremely low RDS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. D D • High power and current handling capability D D SO-8 S S S 4 6 3 7 2 8 1 G Absolute Maximum Ratings Symbol 5 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 200 V VGSS Gate-Source Voltage ±20 V ID Drain Current 3.0 A – Continuous (Note 1a) – Pulsed PD 20 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) 1.0 dv/dt Peak Diode Recovery dv/dt TJ, TSTG Operating and Storage Junction Temperature Range (Note 3) W 3.2 V/ns −55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS2670 FDS2670 13’’ 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDS2670 Rev C1(W) FDS2670 August 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 1) WDSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 100 V, ID = 3.0 A 375 mJ 3.0 A Off Characteristics ID = 250 µA VGS = 0 V, ID = 250 µA, Referenced to 25°C 200 V mV/°C BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 160 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA ID = 250 µA 4.5 V On Characteristics 214 (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ∆VGS(th) ∆TJ RDS(on) ID = 250 µA, Referenced to 25°C –10 VGS = 10 V, ID = 3.0 A VGS =10 V, ID =3.0 A, TJ =125°C VGS = 10 V, VDS = 10 V 100 205 ID(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current gFS Forward Transconductance VDS = 10 V, ID = 3.0 A 15 VDS = 100 V, V GS = 0 V, 1228 pF 112 pF 17 pF 2 4 mV/°C 130 275 20 mΩ A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics f = 1.0 MHz (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time 25 40 ns Qg Total Gate Charge 27 43 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = 100 V, VGS = 10 V, VDS = 100 V, VGS = 10 V ID = 1 A, RGEN = 6 Ω ID = 3 A, 13 23 8 16 ns ns 30 48 ns 7 nC 10 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward IS = 2.1 A VGS = 0 V, Voltage (Note 2) 0.7 2.1 A 1.2 V FDS2670 Rev C1(W) FDS2670 Electrical Characteristics the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when 2 mounted on a 1in pad of 2 oz copper b) 105°/W when mounted on a 0.04 in2 pad of 2 oz copper c) 125°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. ISD ≤ 3A, di/dt ≤ 100A/µs, VDD ≤ BVDSS, Starting TJ = 25°C FDS2670 Rev C1(W) FDS2670 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of FDS2670 Typical Characteristics 1.6 20 VGS = 10V 6.5V VGS = 5.5V 15 1.4 6.0V 6.0V 1.2 10 6.5V 10.0V 1 5 5.5V 0.8 0 0 2 4 6 8 0 10 4 8 12 16 20 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.4 2.5 ID = 3.0A VGS = 10V ID = 1.5 A 2 0.3 1.5 o TA = 125 C 0.2 1 o 0.1 0.5 0 TA = 25 C 0 -50 -25 0 25 50 75 100 125 150 4 5 6 o TJ, JUNCTION TEMPERATURE ( C) 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 30 VGS = 0V VDS = 15V 24 10 18 1 o TA = 125 C o 25 C o -55 C o TA = 125 C 12 0.1 o 25 C o -55 C 6 0.01 0.001 0 3 4 5 6 7 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS2670 Rev C1(W) FDS2670 Typical Characteristics 2000 15 ID = 3.0 A f = 1MHz VGS = 0 V VDS = 40V 70 12 1500 100 V CISS 9 1000 6 500 3 COSS 0 CRSS 0 0 5 10 15 20 25 30 35 0 40 20 Qg, GATE CHARGE (nC) 40 60 Figure 7. Gate Charge Characteristics. 100 Figure 8. Capacitance Characteristics. 100 100 RDS(ON) LIMIT 100µs 10 ID, DRAIN CURRENT (A) 80 VDS, DRAIN TO SOURCE VOLTAGE (V) 10ms 60 100ms 1 SINGLE PULSE RθJA = 125°C/W TA = 25°C 80 1s 10s 40 DC 0.1 VGS = 10V SINGLE PULSE RθJA = 125oC/W 20 TA = 25oC 0.01 0 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) 0.001 0.1 1 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R θJA(t) = r(t) + R θJA Rθ JA = 125°C/W 0.2 0.1 0.1 P(pk) t1 0.05 t2 0.02 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.01 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS2670 Rev C1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4