Download FDS2670 200V N-Channel PowerTrench MOSFET August 2001

FDS2670
200V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
• 3.0 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V
• Low gate charge
• Fast switching speed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
• High performance trench technology for extremely
low RDS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
D
D
• High power and current handling capability
D
D
SO-8
S
S
S
4
6
3
7
2
8
1
G
Absolute Maximum Ratings
Symbol
5
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
200
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
3.0
A
– Continuous
(Note 1a)
– Pulsed
PD
20
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
1.0
dv/dt
Peak Diode Recovery dv/dt
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 3)
W
3.2
V/ns
−55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS2670
FDS2670
13’’
12mm
2500 units
2001 Fairchild Semiconductor Corporation
FDS2670 Rev C1(W)
FDS2670
August 2001
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
IAR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
VDD = 100 V,
ID = 3.0 A
375
mJ
3.0
A
Off Characteristics
ID = 250 µA
VGS = 0 V,
ID = 250 µA, Referenced to 25°C
200
V
mV/°C
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VDS = 160 V,
VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V
VDS = 0 V
–100
nA
ID = 250 µA
4.5
V
On Characteristics
214
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
∆VGS(th)
∆TJ
RDS(on)
ID = 250 µA, Referenced to 25°C
–10
VGS = 10 V,
ID = 3.0 A
VGS =10 V, ID =3.0 A, TJ =125°C
VGS = 10 V,
VDS = 10 V
100
205
ID(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
gFS
Forward Transconductance
VDS = 10 V,
ID = 3.0 A
15
VDS = 100 V,
V GS = 0 V,
1228
pF
112
pF
17
pF
2
4
mV/°C
130
275
20
mΩ
A
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
f = 1.0 MHz
(Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
25
40
ns
Qg
Total Gate Charge
27
43
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = 100 V,
VGS = 10 V,
VDS = 100 V,
VGS = 10 V
ID = 1 A,
RGEN = 6 Ω
ID = 3 A,
13
23
8
16
ns
ns
30
48
ns
7
nC
10
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
IS = 2.1 A
VGS = 0 V,
Voltage
(Note 2)
0.7
2.1
A
1.2
V
FDS2670 Rev C1(W)
FDS2670
Electrical Characteristics
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
2
mounted on a 1in
pad of 2 oz copper
b) 105°/W when
mounted on a 0.04
in2 pad of 2 oz
copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. ISD ≤ 3A, di/dt ≤ 100A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
FDS2670 Rev C1(W)
FDS2670
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
FDS2670
Typical Characteristics
1.6
20
VGS = 10V
6.5V
VGS = 5.5V
15
1.4
6.0V
6.0V
1.2
10
6.5V
10.0V
1
5
5.5V
0.8
0
0
2
4
6
8
0
10
4
8
12
16
20
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
2.5
ID = 3.0A
VGS = 10V
ID = 1.5 A
2
0.3
1.5
o
TA = 125 C
0.2
1
o
0.1
0.5
0
TA = 25 C
0
-50
-25
0
25
50
75
100
125
150
4
5
6
o
TJ, JUNCTION TEMPERATURE ( C)
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
30
VGS = 0V
VDS = 15V
24
10
18
1
o
TA = 125 C
o
25 C
o
-55 C
o
TA = 125 C
12
0.1
o
25 C
o
-55 C
6
0.01
0.001
0
3
4
5
6
7
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
8
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS2670 Rev C1(W)
FDS2670
Typical Characteristics
2000
15
ID = 3.0 A
f = 1MHz
VGS = 0 V
VDS = 40V
70
12
1500
100 V
CISS
9
1000
6
500
3
COSS
0
CRSS
0
0
5
10
15
20
25
30
35
0
40
20
Qg, GATE CHARGE (nC)
40
60
Figure 7. Gate Charge Characteristics.
100
Figure 8. Capacitance Characteristics.
100
100
RDS(ON) LIMIT
100µs
10
ID, DRAIN CURRENT (A)
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
10ms
60
100ms
1
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
80
1s
10s
40
DC
0.1
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
20
TA = 25oC
0.01
0
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
0.001
0.1
1
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R θJA(t) = r(t) + R θJA
Rθ JA = 125°C/W
0.2
0.1
0.1
P(pk)
t1
0.05
t2
0.02
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.01
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS2670 Rev C1(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET 
VCX™
STAR*POWER is used under license
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4