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Light-Emitting Diodes (LED) Lecturer: Mauro Mosca (www.dieet.unipa.it/tfl) A.A. 2015-16 University of Palermo –DEIM LED: injection luminescence p EC - EV = hc/l n EC EF EF EV E r [eV] EG p n V0 1,24 l [ m] LED: radiative recombination LED: radiative recombination no equilibrium: LED: radiative recombination LED: radiative recombination tramite eccitoni LED: NON radiative recombination LED: non-radiative recombination deep-level radiant process predominant at low temperature Auger Emission linewidths effective mass density of states N(E), Z(E) Prof. D. Persano Adorno Emission linewidths Dn = 1.8 kT/h LED construction minore autoassorbimento n+-p diode Light extraction total internal reflection ENCAPSULATION TECHNIQUE n1sinq1 = n2sin(90°) qc = arcsin(n2/n1) most rays strike the surface at an angle less than the critical angle Esercizio Si calcoli la frazione di luce trasmessa per radiazione isotropica F originata da un LED in GaAs. Si esegua lo stesso calcolo per un LED incapsulato in una resina epossidica avente indice pari a 1,5. Per il GaAs si consideri n = 3,6 Soluzione: F = 0.013 (1,3%) per GaAs/air F = 0.036 (3,6%) per GaAs/epoxy/air Radiation pattern ? Radiation pattern ( ) Radiation pattern 0.5 Response time two limitations c Ge in GaAs signal distortion Electrical properties diffusion voltage (or built-in voltage, or potential barrier) Electrical properties Schokley equation Diffusion Voltage e e (V VD ) kT e eV kT e eV kT eVD kT NAND e ni2 Electrical properties Eg Electrical properties Electrical properties Light-current characteristic LED drive circuit for d.c. operations + Vd Vb Vd Rs id LED drive circuit for a.c. operations LED on/off modulation circuit LED linear modulation circuit Efficiency