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BUF460AV
®
NPN TRANSISTOR POWER MODULE
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EASY TO DRIVE TECHNOLOGY (ETD)
HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW Rth JUNCTION CASE
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
LOW INTERNAL PARASITIC INDUCTANCE
APPLICATIONS:
MOTOR CONTROL
■ SMPS & UPS
■ WELDING EQUIPMENT
■
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V CEV
V CEO(sus)
VEBO
IC
I CM
IB
I BM
P tot
V isol
T stg
Tj
Parameter
Collector-Emitter Voltage (V BE = -5 V)
Collector-Emitter Voltage (I B = 0)
Emitter-Base Voltage (I C = 0)
Collector Current
Collector Peak Current (t p = 10 ms)
Base Current
Base Peak Current (t p = 10 ms)
Total Dissipation at T c = 25 o C
Insulation Withstand Voltage (RMS) from All
Four Terminals to External Heatsink
Storage Temperature
Max Operation Junction Temperature
Value
1000
450
7
80
160
18
27
270
2500
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
o
C
C
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February 2003
www.BDTIC.com/ST
BUF460AV
THERMAL DATA
R thj-case
R thc-h
Thermal Resistance Junction-case
Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
0.41
o
C/W
0.05
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CER
Collector Cut-off
Current (R BE = 5 Ω)
V CE = V CEV
V CE = V CEV
T j = 100 o C
I CEV
Collector Cut-off
Current (V BE = -1.5V)
V CE = V CEV
V CE = V CEV
T j = 100 C
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
I EBO
VCEO(sus) * Collector-Emitter
Sustaining Voltage
(I B = 0)
h FE ∗
V CE(sat) ∗
V BE(sat) ∗
di C /dt
DC Current Gain
I C = 60 A
VCE = 5 V
Collector-Emitter
Saturation Voltage
IC
IC
IC
IC
IB
IB
IB
IB
30
30
60
60
A
A
A
A
Typ.
o
I C = 0.2 A
L = 25 mH
V clamp = 450 V
=
=
=
=
Min.
Base-Emitter
Saturation Voltage
I C = 60 A
I C = 60 A
Rate of Rise of
On-state Collector
V CC = 300 V
I B1 = 18 A
=
=
=
=
Unit
0.2
2
mA
mA
0.2
2
mA
mA
1
mA
450
V
15
0.35
3A
o
3 A T j = 100 C
12 A
12 A T j = 100 o C
I B = 12 A
I B = 12 A
Max.
2
V
V
V
V
1.5
V
V
2
0.5
1.1
T j = 100 o C
RC = 0
tp = 3 µs
T j = 100 o C
150
A/µs
V CE (3 µs)• Collector-Emitter
Dynamic Voltage
V CC = 300 V
I B1 = 18 A
R C = 30 Ω
T j = 100 o C
4
6
V
V CE (5 µs)• Collector-Emitter
Dynamic Voltage
V CC = 300 V
I B1 = 18 A
R C = 30 Ω
T j = 100 o C
2
3
V
4.5
0.1
0.3
5
0.2
5
µs
µs
µs
ts
tf
tc
V CEW
Storage Time
Fall Time
Cross-over Time
I C = 30 A
V CC = 50 V
R BB = 0.2 Ω
V BB = -5 V
V clamp = 400 V I B1 = 3 A
L = 25 µH
T j = 100 o C
Maximum Collector
Emitter Voltage
Without Snubber
I CWoff = 80 A
V BB = -5 V
L = 80 µH
T j = 125 o C
I B1 = 16 A
V CC = 50 V
R BB = 0.2 Ω
400
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/7
www.BDTIC.com/ST
V
BUF460AV
Safe Operating Area
Thermal Impedance
Derating Curve
Collector-Emitter Voltage Versus
Base-Emitter Resistance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
3/7
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BUF460AV
Reverse Biased SOA
Forward Biased SOA
Reverse Biased SOA
Forward Biased SOA
Switching Time Inductive Load
Switching Time Inductive Load Versus
Temperature
4/7
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BUF460AV
DC Current Gain
Turn-off Switching Test Circuit
1) Fast electronic switch 2) Non-inductive
Resistor
Turn-on Switching Waveforms.
Turn-off Switching Test Circuit
1) Fast electronic switch
3) Fast recovery rectifier
Turn-off Switching Waveforms.
2) Non-inductive Resistor
5/7
www.BDTIC.com/ST
BUF460AV
ISOTOP MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
11.8
12.2
0.465
0.480
A1
8.9
9.1
0.350
0.358
B
7.8
8.2
0.307
0.322
C
0.75
0.85
0.029
0.033
C2
1.95
2.05
0.076
0.080
D
37.8
38.2
1.488
1.503
D1
31.5
31.7
1.240
1.248
E
25.15
25.5
0.990
1.003
E1
23.85
24.15
0.938
0.950
E2
24.8
0.976
G
14.9
15.1
0.586
0.594
G1
12.6
12.8
0.496
0.503
G2
3.5
4.3
0.137
1.169
F
4.1
4.3
0.161
0.169
F1
4.6
5
0.181
0.196
P
4
4.3
0.157
0.169
P1
4
4.4
0.157
0.173
S
30.1
30.3
1.185
1.193
P093A
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BUF460AV
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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