Download TIP100G

TIP100, TIP101, TIP102
(NPN); TIP105, TIP106,
TIP107 (PNP)
TIP101, TIP102, TIP106 and TIP107 are Preferred Devices
Plastic Medium-Power
Complementary Silicon
Transistors
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Designed for general-purpose amplifier and low-speed switching
applications.
Features
•High DC Current Gain = 2500 (Typ) @ IC
= 4.0 Adc
•Collector-Emitter Sustaining Voltage - @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) - TIP100, TIP105
= 80 Vdc (Min) - TIP101, TIP106
= 100 Vdc (Min) - TIP102, TIP107
•Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC
= 3.0 Adc
= 2.5 Vdc (Max) @ IC = 8.0 Adc
•Monolithic Construction with Built-in Base-Emitter Shunt Resistors
•Pb-Free Packages are Available*
DARLINGTON 8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60-80-100 VOLTS, 80 WATTS
hFE
MARKING
DIAGRAM
4
TO-220AB
CASE 221A
STYLE 1
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1
2
TIP10xG
AYWW
3
TIP10x
x
A
Y
WW
G
= Device Code
= 0, 1, 2, 5, 6, or 7
= Assembly Location
= Year
= Work Week
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 12
1
Publication Order Number:
TIP100/D
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
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MAXIMUM RATINGS
Symbol
TIP100,
TIP105
TIP101,
TIP106
TIP102,
TIP107
Unit
VCEO
60
80
100
Vdc
Collector - Base Voltage
VCB
60
80
100
Vdc
Emitter - Base Voltage
VEB
5.0
Vdc
Collector Current - Continuous
- Peak
IC
8.0
15
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
80
0.64
W
W/°C
Unclamped Inductive Load Energy (1)
E
30
mJ
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
2.0
0.016
W
W/°C
Rating
Collector - Emitter Voltage
Operating and Storage Junction Temperature Range
TJ, Tstg
–65 to +150
°C
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
Characteristic
RqJC
1.56
°C/W
Thermal Resistance, Junction-to-Ambient
RqJA
62.5
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W
ORDERING INFORMATION
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Device
TIP100
TIP100G
Package
Shipping
TO-220
50 Units / Rail
TO-220
(Pb-Free)
50 Units / Rail
TO-220
50 Units / Rail
TO-220
(Pb-Free)
50 Units / Rail
TO-220
50 Units / Rail
TO-220
(Pb-Free)
50 Units / Rail
TO-220
50 Units / Rail
TO-220
(Pb-Free)
50 Units / Rail
TO-220
50 Units / Rail
TO-220
(Pb-Free)
50 Units / Rail
TO-220
50 Units / Rail
TO-220
(Pb-Free)
50 Units / Rail
TIP101
TIP101G
TIP102
TIP102G
TIP105
TIP105G
TIP106
TIP106G
TIP107
TIP107G
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2
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
60
80
100
-
-
50
50
50
-
50
50
50
-
8.0
1000
200
20,000
-
-
2.0
2.5
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
Vdc
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
mAdc
ICEO
mAdc
ICBO
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 8.0 Adc, VCE = 4.0 Vdc)
hFE
-
Collector-Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 6.0 mAdc)
(IC = 8.0 Adc, IB = 80 mAdc)
VCE(sat)
Vdc
Base-Emitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc)
VBE(on)
-
2.8
Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
hfe
4.0
-
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
Vdc
DYNAMIC CHARACTERISTICS
TIP105, TIP106, TIP107
TIP100, TIP101, TIP102
-
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
TC
4.0
80
3.0
60
2.0
40
1.0
20
PD, POWER DISSIPATION (WATTS)
TA
TC
TA
0
0
0
20
40
60
80
100
120
T, TEMPERATURE (°C)
Figure 1. Power Derating
http://onsemi.com
3
140
-
pF
160
300
200
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
5.0
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
VCC
-30 V
RC
SCOPE
t, TIME (s)
μ
RB
D1
51
0
V1
approx
-12 V
≈ 8.0 k ≈ 120
25 ms
0.7
0.5
0.3
0.2
+4.0 V
0.1
0.07
0.05
0.1
for td and tr, D1 is disconnected
and V2 = 0
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
tf
1.0
TUT
V2
approx
+8.0 V
For NPN test circuit reverse all polarities.
tr
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
0.2
td @ VBE(off) = 0 V
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 2. Switching Times Test Circuit
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
PNP
NPN
ts
3.0
2.0
5.0 7.0
10
Figure 3. Switching Times
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.01
P(pk)
ZqJC(t) = r(t) RqJC
RqJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) - TC = P(pk) ZqJC(t)
DUTY CYCLE, D = t1/t2
0.05
0.02
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0.01
0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
50
100
200
500 1.0 k
Figure 4. Thermal Response
IC, COLLECTOR CURRENT (mA)
20
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC - VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
< 150°C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown
5ms
5.0
100 ms
2.0
1ms
d‐
TJ = 150°C
c
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
1.0
0.5
0.2
0.1
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
0.05
0.02
1.0
2.0
5.0
10
20
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
Figure 5. Active-Region Safe Operating Area
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4
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
h fe , SMALL-SIGNAL CURRENT GAIN
10,000
5000
3000
2000
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
1000
500
300
200
100
50
30
20
10
1.0
PNP
NPN
2.0
5.0
10
20
50 100
f, FREQUENCY (kHz)
200
500 1000
Figure 6. Small-Signal Current Gain
300
TJ = 25°C
C, CAPACITANCE (pF)
200
Cob
100
Cib
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70
50
PNP
NPN
30
0.1
0.2
0.5 1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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5
50
100
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
NPN
TIP100, TIP101, TIP102
PNP
TIP105, TIP106, TIP107
20,000
20,000
VCE = 4.0 V
VCE = 4.0 V
5000
10,000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
10,000
TJ = 150°C
25°C
3000
2000
-55°C
1000
7000
5000
25°C
3000
2000
700
500
300
200
0.1
300
200
0.1
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0
-55°C
1000
500
0.2
TJ = 150°C
10
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0
10
3.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. DC Current Gain
TJ = 25°C
2.6
2.2
1.8
1.4
1.0
0.3
IC = 2.0 A
4.0 A
6.0 A
3.0
TJ = 25°C
2.6
IC = 2.0 A
2.2
4.0 A
6.0 A
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0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
1.8
1.4
1.0
0.3
0.5 0.7 1.0
5.0 7.0 10
2.0 3.0
IB, BASE CURRENT (mA)
20
30
5.0 7.0
10
Figure 9. Collector Saturation Region
3.0
3.0
TJ = 25°C
TJ = 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.5
2.0
1.5
VBE(sat) @ IC/IB = 250
VBE @ VCE = 4.0 V
1.0
0.5
0.1
0.5 0.7 1.0
2.0 3.0
5.0 7.0
VBE @ VCE = 4.0 V
1.5
VBE(sat) @ IC/IB = 250
1.0
VCE(sat) @ IC/IB = 250
0.2 0.3
2.0
VCE(sat) @ IC/IB = 250
0.5
0.1
10
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
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6
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
PACKAGE DIMENSIONS
TO-220
CASE 221A-09
ISSUE AE
-TB
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
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