Download PNP Bipolar Transistor

BCW30LT1G, SBCW30LT1G
General Purpose
Transistors
PNP Silicon
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Features
 AEC−Q101 Qualified and PPAP Capable
 S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
SOT−23 (TO−236)
CASE 318−08
STYLE 6
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO
−32
Vdc
Collector − Base Voltage
VCBO
−32
Vdc
Emitter-Base Voltage
VEBO
−5.0
Vdc
IC
−100
mAdc
Symbol
Value
Unit
Collector Current − Continuous
COLLECTOR
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR-5 Board (Note 1)
TA = 25C
Derate above 25C
PD
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25C
Derate above 25C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
MARKING DIAGRAM
mW
225
1.8
mW/C
RqJA
556
C/W
PD
300
mW
2.4
mW/C
RqJA
417
C/W
TJ, Tstg
−55 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
C2 M G
G
1
C2
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
BCW30LT1G
SOT−23
(Pb−Free)
3,000/Tape & Reel
SBCW30LT1G
SOT−23
(Pb−Free)
3,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.BDTIC.com/ON/
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 3
1
Publication Order Number:
BCW30LT1/D
BCW30LT1G, SBCW30LT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
−32
−
−32
−
−32
−
−5.0
−
−
−
−100
−10
nAdc
mAdc
215
500
−
−
−0.3
−0.6
−0.75
−
7.0
−
10
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −2.0 mAdc, IE = 0)
V(BR)CEO
Collector−Emitter Breakdown Voltage
(IC = −100 mAdc, VEB = 0)
V(BR)CES
Collector−Base Breakdown Voltage
(IC = −10 mAdc, IC = 0)
V(BR)CBO
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −32 Vdc, IE = 0)
(VCB = −32 Vdc, IE = 0, TA = 100C)
ICBO
Vdc
Vdc
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
VCE(sat)
Base−Emitter On Voltage
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
VBE(on)
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(IE = 0, VCB = −10 Vdc, f = 1.0 MHz)
Cobo
Noise Figure
(IC = −0.2 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
pF
NF
dB
TYPICAL NOISE CHARACTERISTICS
(VCE = − 5.0 Vdc, TA = 25C)
10
7.0
IC = 10 mA
5.0
In, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
RS  0
30 mA
3.0
100 mA
300 mA
1.0 mA
2.0
BANDWIDTH = 1.0 Hz
RS  
IC = 1.0 mA
3.0
2.0
300 mA
1.0
0.7
0.5
100 mA
30 mA
0.3
0.2
1.0
10 mA
0.1
10
20
50
100 200
500 1.0k
f, FREQUENCY (Hz)
2.0k
5.0k
10k
10
Figure 1. Noise Voltage
20
50
100 200
500 1.0k 2.0k
f, FREQUENCY (Hz)
Figure 2. Noise Current
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2
5.0k
10k
BCW30LT1G, SBCW30LT1G
NOISE FIGURE CONTOURS
1.0M
500k
BANDWIDTH = 1.0 Hz
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
(VCE = − 5.0 Vdc, TA = 25C)
200k
100k
50k
20k
10k
0.5 dB
5.0k
1.0 dB
2.0k
1.0k
500
2.0 dB
3.0 dB
200
100
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
BANDWIDTH = 1.0 Hz
200k
100k
50k
20k
10k
0.5 dB
5.0k
1.0 dB
2.0k
1.0k
500
2.0 dB
3.0 dB
200
100
5.0 dB
10
1.0M
500k
500 700 1.0k
5.0 dB
10
20
RS , SOURCE RESISTANCE (OHMS)
Figure 3. Narrow Band, 100 Hz
1.0M
500k
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500 700 1.0k
Figure 4. Narrow Band, 1.0 kHz
10 Hz to 15.7 kHz
200k
100k
50k
Noise Figure is Defined as:
NF + 20 log10
20k
10k
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200
100
10
20
30
50 70 100
200 300
ƫ
en2 ) 4KTRS ) In 2RS2 1ń2
4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10−23 j/K)
T = Temperature of the Source Resistance (K)
RS = Source Resistance (Ohms)
5.0k
2.0k
1.0k
500
ƪ
500 700 1.0k
IC, COLLECTOR CURRENT (mA)
Figure 5. Wideband
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BCW30LT1G, SBCW30LT1G
TYPICAL STATIC CHARACTERISTICS
h FE, DC CURRENT GAIN
500
TJ = 125C
25C
300
-55C
200
180
BCW29LT1
VCE = 1.0 V
VCE = 10 V
160
140
0.003 0.005
0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (mA)
3.0
5.0 7.0
10
20
30
50 70 100
100
1.0
TA = 25C
BCW29LT1
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. DC Current Gain
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
TA = 25C
PULSE WIDTH = 300 ms
80 DUTY CYCLE  2.0%
200 mA
150 mA
40
100 mA
20
20
50 mA
0
5.0
10
15
20
25
30
35
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENTS (mV/ C)
1.2
V, VOLTAGE (VOLTS)
40
Figure 8. Collector Characteristics
TJ = 25C
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.5 1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
250 mA
60
0
5.0 10
1.4
0.2
350 mA
300 mA
Figure 7. Collector Saturation Region
0.1
IB = 400 mA
50
1.6
*APPLIES for IC/IB  hFE/2
0.8
*qVC for VCE(sat)
0
- 55C to 25C
0.8
25C to 125C
1.6
2.4
0.1
100
25C to 125C
Figure 9. “On” Voltages
qVB for VBE
0.2
- 55C to 25C
1.0 2.0
5.0
10 20
0.5
IC, COLLECTOR CURRENT (mA)
Figure 10. Temperature Coefficients
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50
100
BCW30LT1G, SBCW30LT1G
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
200
100
70
50
30
tr
20
10
7.0
5.0
1.0
100
70
50
tf
30
td @ VBE(off) = 0.5 V
20
2.0
3.0
50 70
20 30
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
10
-1.0
100
Figure 12. Turn−Off Time
500
10
TJ = 25C
TJ = 25C
7.0
VCE = 20 V
300
Cib
C, CAPACITANCE (pF)
f,
T CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
- 50 - 70 -100
- 2.0 - 3.0 - 5.0 - 7.0 -10
- 20 - 30
IC, COLLECTOR CURRENT (mA)
Figure 11. Turn−On Time
5.0 V
200
100
5.0
3.0
2.0
Cob
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.1
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 13. Current−Gain — Bandwidth Product
Figure 14. Capacitance
hfe  300
@ IC = -1.0 mA
7.0
5.0
VCE = -10 Vdc
f = 1.0 kHz
TA = 25C
hoe, OUTPUT ADMITTANCE (m mhos)
10
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
20
50
200
20
hie , INPUT IMPEDANCE (k  )
VCC = - 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25C
ts
300
t, TIME (ns)
t, TIME (ns)
1000
700
500
VCC = 3.0 V
IC/IB = 10
TJ = 25C
100
70
50
VCE = 10 Vdc
f = 1.0 kHz
TA = 25C
30
20
hfe  300
@ IC = 1.0 mA
10
7.0
5.0
3.0
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
50
2.0
0.1
100
Figure 15. Input Impedance
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
Figure 16. Output Admittance
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5
50
100
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)
BCW30LT1G, SBCW30LT1G
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
t2
2.0
5.0
10
20
50
t, TIME (ms)
100 200
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN-569)
ZqJA(t) = r(t)  RqJA
TJ(pk) - TA = P(pk) ZqJA(t)
500 1.0k 2.0k
5.0k 10k 20k
50k 100k
Figure 17. Thermal Response
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
104
IC, COLLECTOR CURRENT (nA)
VCC = 30 V
A train of periodical power pulses can be represented by the model
as shown in Figure 19. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 17 was calculated for various duty cycles.
To find ZqJA(t), multiply the value obtained from Figure 17 by the
steady state value RqJA.
103
ICEO
102
101
ICBO
AND
ICEX @ VBE(off) = 3.0 V
100
Example:
The BCW29LT1 is dissipating 2.0 watts peak under the following
conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
10-1
10-2
-4
0
-2
0
0
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88C.
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
TJ, JUNCTION TEMPERATURE (C)
For more information, see AN−569.
Figure 18. Typical Collector Leakage Current
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BCW30LT1G, SBCW30LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BCW30LT1/D