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Product Data Sheet August 5, 2008 12-18 GHz Ku-Band 3-Stage Driver Amplifier TGA2507 Key Features • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 6 V, Id = 80 mA • Point to Point Radio 32 0 Gain 24 -10 IRL 20 -15 16 -20 12 -25 ORL 8 • Military Ku-Band -5 -30 4 • Ku-Band Space Return Loss (dB) 28 Gain (dB) 12-18 GHz Bandwidth 28 dB Nominal Gain 20 dBm P1dB Bias: 5,6,7 V, 80 ± 10% mA Self Bias 0.5 um 3MI mmW pHEMT Technology Chip Dimensions: 1.80 x 0.83 x 0.1 mm (0.071 x 0.031 x 0.004) in • VSAT -35 0 -40 8 10 12 14 16 18 20 16 17 22 Frequency (GHz) 24 P 1dB (dBm ) 22 20 18 16 11 12 13 14 15 18 Frequency (GHz) www.BDTIC.com/TriQuint/ Note: Datasheet is subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 1 Product Data Sheet August 5, 2008 TGA2507 TABLE I MAXIMUM RATINGS 1/ SYMBOL VALUE NOTES Positive Supply Voltage 8V 2/ Positive Supply Current 114 mA 2/ PIN Input Continuous Wave Power 20 dBm PD Power Dissipation 0.91 W V I + + TCH TM TSTG PARAMETER 2/ 3/ 0 Operating Channel Temperature 150 C 4/ 5/ 0 Mounting Temperature (30 Seconds) 320 C 0 Storage Temperature -65 to 150 C 1/ These ratings represent the maximum operable values for this device 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ When operated at this power dissipation with a base plate temperature of 70° C, the median life is 1.8 E+6 hrs. 4/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 5/ These ratings apply to each individual FET. TABLE II DC PROBE TESTS (TA = 25 °C Nominal) SYMBOL PARAMETER MINIMUM MAXIMUM VALUE VBVGS3 Breakdown Voltage gate-source -30 -11 V VBVGD3 Breakdown Voltage gate-drain -30 -11 V VP2 Pinch-off Voltage -1.5 -0.3 V VP3 Pinch-off Voltage -1.5 -0.3 V www.BDTIC.com/TriQuint/ TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 2 Product Data Sheet August 5, 2008 TGA2507 TABLE III ELECTRICAL CHARACTERISTICS (Ta = 25 0C, Nominal) PARAMETER TYPICAL UNITS 6 V Quiescent Current 80 ± 10% Self Bias mA Small Signal Gain 28 dB Input Return Loss 15 dB Output Return Loss 20 dB Output Power @ 1 dB Compression Gain 20 dBm Drain Operating TABLE IV THERMAL INFORMATION Parameter Test Conditions Vd = 6 V RθJC Thermal Id = 80 mA Resistance (channel to backside of Pdiss = 0.48 W carrier) TCH (oC) RθJC (°C/W) TM (HRS) 108 80 5.2 E+7 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo o Carrier at 70 C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. www.BDTIC.com/TriQuint/ TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 3 Product Data Sheet August 5, 2008 TGA2507 Preliminary Measured Data Bias Conditions: Vd = 5, 6, 7 V, Id = 80 mA Gain (dB) 32 30 5V 28 6V 26 7V 24 22 20 18 11 12 13 14 15 16 17 18 19 Frequency (GHz) Bias Conditions: Vd = 6 V, Id = 80 mA 36 34 Gain Over Temperature (dB) 0 -20 C 32 -40 0C 30 28 +20 0C 26 +10 0C 24 0 0C 22 20 18 11 12 13 14 15 16 17 18 19 Frequency (GHz) www.BDTIC.com/TriQuint/ TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 4 Product Data Sheet August 5, 2008 TGA2507 Preliminary Measured Data Bias Conditions: Vd =5, 6, 7 V, Id = 80 mA 0 Input Return Loss (dB) -5 5V -10 -15 -20 -25 7V -30 -35 6V -40 11 12 13 14 15 16 17 18 19 17 18 19 Frequency (GHz) 0 -5 Output Return Loss (dB) -10 5V -15 -20 6V -25 7V -30 -35 -40 -45 -50 11 12 13 14 15 16 Frequency (GHz) www.BDTIC.com/TriQuint/ TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 5 Product Data Sheet August 5, 2008 TGA2507 Preliminary Measured Data Bias Conditions: Vd = 5, 6, 7 V, Id = 80 mA Pout @ 1dB Gain Compression (dBm) 24 23 7V 22 6V 21 20 5V 19 18 17 16 15 11 12 13 14 15 16 17 18 Frequency (GHz) Bias Conditions: Vd = 5, 6, 7 V, Id = 80 mA, Frequency @ 15GHz 24 30 5V 29 20 28 18 27 16 26 14 25 12 24 7V 10 23 6V 8 22 6 21 4 20 2 19 0 18 -25 -23 -21 -19 -17 -15 -13 -11 -9 -7 -5 -3 -1 Power Gain (dB) Pout (dBm) 22 1 Pin (dBm) www.BDTIC.com/TriQuint/ TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 6 Product Data Sheet August 5, 2008 TGA2507 Preliminary Measured Data Bias Conditions: Vd = 5, 6, 7 V, Id = 80 mA 34 7V 32 OIP3 (dBm) 30 28 6V 26 5V 24 22 20 12 13 14 15 16 17 18 Frequency (GHz) www.BDTIC.com/TriQuint/ TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 7 Product Data Sheet August 5, 2008 TGA2507 Mechanical Drawing GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. www.BDTIC.com/TriQuint/ TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 8 Product Data Sheet August 5, 2008 TGA2507 Chip Assembly Diagram This configuration is for a self-bias logic pad current search with connections for bin #1. See Table IV for alternate bin # to get the current of typical 80 ± 10% mA. TABLE V PAD CONNECTIONS BIN No. 1 2 3 4 DC BIAS LADDER 1 Pad 6 to Pad 7 Pad 6 to Pad 8 Pad 6 to Pad 9 Pad 6 to Pad 10 DC BIAS LADDER 2 Pad 11 to Pad 12 Pad 11 to Pad 13 Pad 11 to Pad 14 Pad 11 to Pad 15 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. www.BDTIC.com/TriQuint/ TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 9 Product Data Sheet August 5, 2008 TGA2507 Assembly Process Notes Reflow process assembly notes: • • • • • Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: • • • • • • • Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: • • • • Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. www.BDTIC.com/TriQuint/ TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 10