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Product Data Sheet
August 5, 2008
12-18 GHz Ku-Band 3-Stage Driver Amplifier
TGA2507
Key Features
•
•
•
•
•
•
Preliminary Measured Data
Primary Applications
Bias Conditions: Vd = 6 V, Id = 80 mA
• Point to Point Radio
32
0
Gain
24
-10
IRL
20
-15
16
-20
12
-25
ORL
8
• Military Ku-Band
-5
-30
4
• Ku-Band Space
Return Loss (dB)
28
Gain (dB)
12-18 GHz Bandwidth
28 dB Nominal Gain
20 dBm P1dB
Bias: 5,6,7 V, 80 ± 10% mA Self Bias
0.5 um 3MI mmW pHEMT Technology
Chip Dimensions: 1.80 x 0.83 x 0.1 mm
(0.071 x 0.031 x 0.004) in
• VSAT
-35
0
-40
8
10
12
14
16
18
20
16
17
22
Frequency (GHz)
24
P 1dB (dBm )
22
20
18
16
11
12
13
14
15
18
Frequency (GHz)
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Note: Datasheet is subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
1
Product Data Sheet
August 5, 2008
TGA2507
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
VALUE
NOTES
Positive Supply Voltage
8V
2/
Positive Supply Current
114 mA
2/
PIN
Input Continuous Wave Power
20 dBm
PD
Power Dissipation
0.91 W
V
I
+
+
TCH
TM
TSTG
PARAMETER
2/ 3/
0
Operating Channel Temperature
150 C
4/ 5/
0
Mounting Temperature (30 Seconds)
320 C
0
Storage Temperature
-65 to 150 C
1/
These ratings represent the maximum operable values for this device
2/
Combinations of supply voltage, supply current, input power, and output power shall not
exceed PD.
3/
When operated at this power dissipation with a base plate temperature of 70° C, the median
life is 1.8 E+6 hrs.
4/
Combinations of supply voltage, supply current, input power, and output power shall not
exceed PD.
5/
These ratings apply to each individual FET.
TABLE II
DC PROBE TESTS
(TA = 25 °C Nominal)
SYMBOL
PARAMETER
MINIMUM
MAXIMUM
VALUE
VBVGS3
Breakdown Voltage gate-source
-30
-11
V
VBVGD3
Breakdown Voltage gate-drain
-30
-11
V
VP2
Pinch-off Voltage
-1.5
-0.3
V
VP3
Pinch-off Voltage
-1.5
-0.3
V
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TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
2
Product Data Sheet
August 5, 2008
TGA2507
TABLE III
ELECTRICAL CHARACTERISTICS
(Ta = 25 0C, Nominal)
PARAMETER
TYPICAL
UNITS
6
V
Quiescent Current
80 ± 10% Self Bias
mA
Small Signal Gain
28
dB
Input Return Loss
15
dB
Output Return Loss
20
dB
Output Power @ 1 dB Compression Gain
20
dBm
Drain Operating
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions
Vd = 6 V
RθJC Thermal
Id = 80 mA
Resistance
(channel to backside of Pdiss = 0.48 W
carrier)
TCH
(oC)
RθJC
(°C/W)
TM
(HRS)
108
80
5.2 E+7
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
o
Carrier at 70 C baseplate temperature. Worst case condition with no RF applied, 100%
of DC power is dissipated.
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TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
3
Product Data Sheet
August 5, 2008
TGA2507
Preliminary Measured Data
Bias Conditions: Vd = 5, 6, 7 V, Id = 80 mA
Gain (dB)
32
30
5V
28
6V
26
7V
24
22
20
18
11
12
13
14
15
16
17
18
19
Frequency (GHz)
Bias Conditions: Vd = 6 V, Id = 80 mA
36
34
Gain Over Temperature (dB)
0
-20 C
32
-40 0C
30
28
+20 0C
26
+10 0C
24
0 0C
22
20
18
11
12
13
14
15
16
17
18
19
Frequency (GHz)
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TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
4
Product Data Sheet
August 5, 2008
TGA2507
Preliminary Measured Data
Bias Conditions: Vd =5, 6, 7 V, Id = 80 mA
0
Input Return Loss (dB)
-5
5V
-10
-15
-20
-25
7V
-30
-35
6V
-40
11
12
13
14
15
16
17
18
19
17
18
19
Frequency (GHz)
0
-5
Output Return Loss (dB)
-10
5V
-15
-20
6V
-25
7V
-30
-35
-40
-45
-50
11
12
13
14
15
16
Frequency (GHz)
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TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
5
Product Data Sheet
August 5, 2008
TGA2507
Preliminary Measured Data
Bias Conditions: Vd = 5, 6, 7 V, Id = 80 mA
Pout @ 1dB Gain Compression (dBm)
24
23
7V
22
6V
21
20
5V
19
18
17
16
15
11
12
13
14
15
16
17
18
Frequency (GHz)
Bias Conditions: Vd = 5, 6, 7 V, Id = 80 mA, Frequency @ 15GHz
24
30
5V
29
20
28
18
27
16
26
14
25
12
24
7V
10
23
6V
8
22
6
21
4
20
2
19
0
18
-25
-23
-21
-19
-17
-15
-13
-11
-9
-7
-5
-3
-1
Power Gain (dB)
Pout (dBm)
22
1
Pin (dBm)
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Product Data Sheet
August 5, 2008
TGA2507
Preliminary Measured Data
Bias Conditions: Vd = 5, 6, 7 V, Id = 80 mA
34
7V
32
OIP3 (dBm)
30
28
6V
26
5V
24
22
20
12
13
14
15
16
17
18
Frequency (GHz)
www.BDTIC.com/TriQuint/
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
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Product Data Sheet
August 5, 2008
TGA2507
Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
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TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
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Product Data Sheet
August 5, 2008
TGA2507
Chip Assembly Diagram
This configuration is for a self-bias logic pad current search with connections for bin
#1. See Table IV for alternate bin # to get the current of typical 80 ± 10% mA.
TABLE V
PAD CONNECTIONS
BIN No.
1
2
3
4
DC BIAS LADDER 1
Pad 6 to Pad 7
Pad 6 to Pad 8
Pad 6 to Pad 9
Pad 6 to Pad 10
DC BIAS LADDER 2
Pad 11 to Pad 12
Pad 11 to Pad 13
Pad 11 to Pad 14
Pad 11 to Pad 15
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
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TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
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Product Data Sheet
August 5, 2008
TGA2507
Assembly Process Notes
Reflow process assembly notes:
•
•
•
•
•
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300ƒ C (30 seconds max).
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
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•
•
•
•
•
•
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
•
•
•
•
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Maximum stage temperature is 200ƒ C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
www.BDTIC.com/TriQuint/
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
10