Download M63840FP

MITSUBISHI SEMICONDUCTOR 【TRANSISTOR ARRAY】
M63840P/FP/KP
PRELIMINARY
8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode
＊Notice: This is not a f inal specif ication.
Some parametric limits are subject to change.
DESCRIPTION
PIN CONFIGURATION （TOP VIEW）
M63840P/FP/KP are eight-circuit output-sourcing Darlington transistor array .The circuits are made of PNP and
NPN transistors. Both the semiconductor integrated
circuits perf orm high-current driv ing with extremely low
input-current supply .
IN1→ 1
18 →O1
IN2→ 2
17 →O2
IN3→ 3
16 →O3
IN4→ 4
15 →O4
IN5→ 5
14 →O5
IN6→ 6
13 →O6
IN7→ 7
12 →O7
IN8→ 8
11 →O8
INPUT
FEATURES
High breakdown v oltage （BVCEO≧ 40V）
High-current driv ing （I O(max)＝－500mA ）
With output clamping diodes
OUTPUT
Driv ing av ailable with TTL output or C-MOS IC output
Vs
Wide operating temperature range (Ta= -40～+85℃)
9
10
GND
Package type 18P4G(P)
Output current-sourcing ty pe
APPLICATION
NC
1
20
NC
D riv es of relay s , print ers, LEDs, f luorescent display
IN1→ 2
19 →O1
tubes and lamps. and interf aces between MOS-bipolar
IN2→ 3
18 →O2
logic sy stems and relay s, solenoids, of small motors.
IN3→ 4
17 →O3
IN4→ 5
16 →O4
IN5→ 6
15 →O5
IN6→ 7
14 →O6
IN7→ 8
13 →O7
IN8→ 9
12 →O8
入力
出力
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FUNCTION
The M63840P/FP/KP each hav e eight circuits, which are
made of input inv erters and current-sourcing outputs.
The output are made of PNP transistors and NPN
Darlington transistors. The PNP transistor base current
is constant. A clamping diode is prov ided between each
output and GND. Vs and GND are used commonly
among the eight circuits.
The inputs hav e resistance of 10kΩ, and v oltage of up
to 15V is applicable. Output current is 500mA maximum.
Supply v oltage VS is 40V maximum.
The M63840FP/KP is enclosed in a molded small f lat
package, enabling space-sav ing design.
Vs
11
10
GND
Package type 20P2N-A(FP)
20P2E-A(KP)
NC: No connection
CIRCUIT DIAGRAM （EACH CIRCUIT）
Vs
20K
INPUT
10K
2.6K
10K
5K
100K
OUTPUT
GND
The eight circuits share Vs and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit: Ω
1/7
Jan/'06
MITSUBISHI SEMICONDUCTOR 【TRANSISTOR ARRAY】
M63840P/FP/KP
8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta= -40～+85℃)
Sy mbol
Parameter
VCEO
Collector-emitter v oltage
VS
Supply v oltage
VI
Input v oltage
Conditions
Output, L
Output current
Clamping diode f orward current
VR
Clamping diode rev erse v oltage
Ta= 25℃, when
mounted on board
Power dissipation
Operating temperature
Tstg
Storage temperature
V
-0.5～+40
Current per circuit output, H
IF
Topr
Unit
V
40
IO
Pd
Ratings
-0.5～+15
V
-500
mA
-500
mA
35
V
M63840P
1.79
M63840FP
1.10
M63840KP
0.68
W
-40～+85
℃
-55～+125
℃
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta= -40～+85℃)
Sy mbol
VS
Parameter
Supply v oltage
Output current
Duty Cy cle
P: no more then 10%
FP: no more then 5%
KP: no more then 3%
Duty Cy cle
P: no more then 54%
FP: no more then 30%
KP: no more then 18%
min
0
Limits
ty p
-
max
40
0
-
-350
Unit
V
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IO
VIH
VIL
(Current per 1 circuit when 8 circuits
are coming on simultaneously)
"H" input v oltage
"L" input v oltage
mA
0
-
-100
2.0
0
-
12
0.8
min
Limits
ty p
max
V
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta= 25℃)
Sy mbol
Parameter
Test conditions
Unit
μA
I S(leak)
Supply leak current
VS = 40V, VI= 0.8V
-
-
100
VCE(sat)
Collector-emitter saturation
v oltage
VS = 10V, VI= 2V, I O= -350mA
-
1.7
2.0
VS = 10V, VI= 2V, I O= -100mA
-
1.5
1.8
VI= 2.4V
-
36
52
VI= 3.85V
-
180
260
VS = 40V, VI= 2V (per 1 circuit)
-
-
2.5
mA
V
μA
II
Input current
IS
Supply current
VF
Clamping diode f orward v oltage
I F= 350mA
-
1.3
2.0
IR
Clamping diode rev erse current
VR= 40V
-
-
100
V
μA
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta= 25℃)
Sy mbol
ton
tof f
Parameter
Turn-on time
Test conditions
C L= 15pF (note 1)
min
-
Turn-of f time
2/7
Limits
ty p
max
Unit
180
-
ns
2200
-
ns
MITSUBISHI SEMICONDUCTOR 【TRANSISTOR ARRAY】
M63840P/FP/KP
8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode
NOTE 1 TEST CIRCUIT
TIMING DIAGRAM
VS
INPUT
50%
50%
INPUT
Measured device
PG
OUTPUT
50%
50Ω
RL
CL
50%
OUTPUT
ton
toff
(1)Pulse generator (PG) characteristics: PRR= 1KHz,
tw= 10μs, tr= 6ns, tf = 6ns, Zo= 50Ω,
VI = 0～2.4V
(2)Input-output conditions： R L= 100Ω, VS= 40V
(3)Electrostatic capacity C L includes f loating capacitance
at connections and input capacitance at probes.
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Output Current Characteristics
Thermal Derating Factor Characteristics
2.0
-500
M63840P
Vs= 10V
VI= 2V
-400
1.5
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-300
M63840FP
Ta= 85℃
1.0
0.931
-200
M63840KP
Ta= 25℃
0.572
0.5
-100
0.354
0
0
25
50
75
85
Ta= -40℃
0
0
100
0.4
0.8
1.2
1.6
2.0
Ambient temperature　Ta　(℃)
Output saturation voltage　VCE(sat)　(V)
Duty-Cycle-Output Current Characteristics
(M63840P)
Duty-Cycle-Output Current Characteristics
(M63840P)
-500
-500
①
-400
-400
②
①
-300
-300
③
-200
-100
0
0
The drain c urrent
values repres ent the
current per c irc uit.
Repeated frequenc y ≧ 10Hz
The v alue in the c irc le repres ents the v alue
of the s imultaneous ly -operated c irc uit.
Ta = 25℃
20
40
60
80
④
⑤
⑥
⑦
⑧
②
-200
The drain c urrent
values repres ent the
current per c irc uit.
Repeated frequenc y ≧ 10Hz
The v alue in the c irc le repres ents the v alue
of the s imultaneous ly -operated c irc uit.
Ta = 85℃
-100
0
100
Duty cycle　(%)
0
20
40
60
Duty cycle　(%)
3/7
80
③
④
⑥⑤
⑧⑦
100
MITSUBISHI SEMICONDUCTOR 【TRANSISTOR ARRAY】
M63840P/FP/KP
8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode
Duty-Cycle-Output Current Characteristics
(M63840FP)
Duty-Cycle-Output Current Characteristics
(M63840FP)
-500
-500
①
-400
-400
-300
-300
②
①
-200
-200
③
-100
0
0
20
40
60
80
The drain
④
⑤
⑥
⑦
⑧
The drain c urrent
values repres ent the
current per c irc uit.
Repeated frequenc y ≧ 10Hz
The v alue in the c irc le repres ents the v alue
of the s imultaneous ly -operated c irc uit.
Ta = 25℃
②
③
④
⑤
⑦⑥
⑧
current values
-100
represent the current
per circuit.
Repeated frequency ≧ 10Hz
The value in the circle represents the value
0
100
of the simultaneously-operated circuit.
0
20
Duty cycle　(%)
40
Ta = 85℃
60
80
100
Duty cycle　(%)
Duty-Cycle-Output Current Characteristics
(M63840KP)
Duty-Cycle-Output Current Characteristics
(M63840KP)
-500
-500
-400
-400
The drain c urrent v alues
repres ent the c urrent per
circ uit.
Repeated frequenc y ≧ 10Hz
The v alue in the c irc le repres ents
the v alue of the s imultaneous ly operated c irc uit.
Ta = 85℃
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①
-300
-200
-300
-200
②
values represent the
-100
current per circuit.
Repeated frequency ≧ 10Hz
The value in the circle represents the value
0
of the simultaneously-operated circuit.
0
20
40
①
③
④
⑤⑥
⑦⑧
The drain current
-100
Ta = 25℃
60
80
0
100
0
20
Duty cycle　(%)
40
60
80
②
③④
⑤⑥
⑦
⑧
100
Duty cycle　(%)
Clamping Diode Characteristics
Grounded Emitter Transfer Characteristics
-500
500
Vs= 20V
Vs-Vo= 4V
-400
400
Ta= 85℃
-300
300
Ta= 25℃
Ta= 85℃
-200
200
Ta= -40℃
Ta= 25℃
-100
Ta= -40℃
100
0
0
0.4
0.8
1.2
1.6
0
0
2.0
0.4
0.8
1.2
1.6
Forward bias voltage　VF (V)
Input voltage　VI　(V)
4/7
2.0
MITSUBISHI SEMICONDUCTOR 【TRANSISTOR ARRAY】
M63840P/FP/KP
8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode
Input Characteristics
Input Characteristics
0.5
5
Vs= 20V
Vs= 20V
0.4
4
Ta= -40℃
0.3
3
Ta= 25℃
Ta= -40℃
0.2
2
Ta= 25℃
0.1
1
Ta= 85℃
Ta= 85℃
0
0
1
2
3
4
0
5
Input voltage　VI　(V)
0
4
8
12
16
20
Input voltage　VI　(V)
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5/7
MITSUBISHI SEMICONDUCTOR 【TRANSISTOR ARRAY】
M63840P/FP/KP
8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode
www.BDTIC.com/MITSUBISHI
6/7
MITSUBISHI SEMICONDUCTOR 【TRANSISTOR ARRAY】
M63840P/FP/KP
8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode
www.BDTIC.com/MITSUBISHI
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