Download M63824GP

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63824GP/KP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
The M63824GP/KP 7-channel sinkdriver, consists of 14 NPN
transistors connected to from seven high current gain driver
pairs.
PIN CONFIGURATION
FEATURES
● High breakdown voltage (BVCEO ≥ 50V)
● High-current driving (IC(max) = 500mA)
● With clamping diodes
● 3V micro computer series compatible input
● Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Output for 3 voltage microcomputer series and interface with
high voltage system. Relay and small printer driver, LED, or
incandescent display digit driver.
INPUT
IN1
1
16
O1
IN2
2
15
O2
IN3
3
14
O3
IN4
4
13
O4
IN5
5
12
O5
IN6
6
11
O6
IN7
7
10
O7
GND
8
9
COM
OUTPUT
COMMON
16P2S-A(GP)
16P2Z-A(KP)
Package type
CIRCUIT DIAGRAM
COM
FUNCTION
The M63824GP/KP is transistor-array of high active level
seven units type which can do direct drive of 3 voltage microcomputer series. A resistor of 1.05kΩ is connected between
the input pin. A clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM
pin (pin9). All emitters of the output transistor are connected
to GND (pin8). The outputs are capable of driving 500mA
and are rated for operation with output voltage up to 50V.
OUTPUT
1.05K
INPUT
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7.2K
3K
GND
The seven circuits share the COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Collector current
Conditions
Output, H
Current per circuit output, L
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +50
500
–0.5 ~ +10
500
50
0.80(GP)/0.6(KP)
–40 ~ +85
–55 ~ +125
Unit
V
mA
V
mA
V
W
°C
°C
Feb.2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63824GP/KP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
Parameter
VO
Output voltage
IC
Collector current (Current per
1 circuit when 7 circuits are
coming on simultaneously)
VIH
VIL
Duty Cycle
GP : no more than 4%
KP : no more than 3%
typ
max
—
50
0
—
400
0
—
200
2.4
—
—
0.4
0
ELECTRICAL CHARACTERISTICS
Unit
V
10
V
V
(Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
V (BR) CEO
Collector-emitter breakdown voltage
II
VF
IR
hFE
min
0
mA
Duty Cycle
GP : no more than 15%
KP : no more than 12%
IC ≤ 400mA
“H” input voltage
“L” input voltage
VCE(sat)
Limits
Conditions
Limits
Test conditions
min
50
—
—
—
—
—
—
1000
ICEO = 100µA
II = 500µA, IC = 350mA
Collector-emitter saturation voltage II = 350µA, IC = 200mA
II = 250µA, IC = 100mA
Input current
VI = 3V
Clamping diode forward volltage IF = 350mA
Clamping diode reverse current
VR = 50V
VCE = 2V, IC = 350mA
DC amplification factor
typ
—
1.2
1.0
0.9
1.5
1.4
—
2500
Unit
max
—
1.6
1.3
1.1
2.4
2.0
100
—
V
V
mA
V
µA
—
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SWITCHING CHARACTERISTICS
Symbol
ton
(Unless otherwise noted, Ta = 25°C)
Parameter
Turn-on time
Turn-off time
toff
Limits
Test conditions
CL = 15pF (note 1)
min
—
typ
15
max
—
—
350
—
Unit
ns
ns
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
INPUT
VO
50%
Measured device
50%
INPUT
RL
OPEN
OUTPUT
PG
OUTPUT
50Ω
CL
50%
ton
50%
toff
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω
VI = 0 ~ 3V
(2)Input-output conditions : RL = 25Ω, Vo = 10V
(3)Electrostatic capacity CL includes floating capacitance
at connections and input capacitance at probes
Feb.2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63824GP/KP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Clamping Diode Characteristics
Thermal Derating Factor Characteristics
500
Forward bias current IF (mA)
Power dissipation Pd (W)
1.0
M63824GP
0.8
M63824KP
0.6
0.416
0.4
0.312
0.2
0
0
25
75 85
50
300
200
Ta=25°C
100
Ta=85°C
0
100
0
Ta=–40°C
1.0
0.5
1.5
2.0
Ambient temperature Ta (°C)
Forward bias voltage VF (V)
Duty Cycle-Collector Characteristics
(M63824GP)
Duty Cycle-Collector Characteristics
(M63824GP)
500
400
Collector current Ic (mA)
500
Collector current Ic (mA)
400
400
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1
300
2
200
•The collector current values
represent the current per circuit.
•Repeated frequencyy ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
0
0
Collector current Ic (mA)
500
20
40
60
80
100
0
20
40
60
80
100
Duty Cycle-Collector Characteristics
(M63824KP)
Duty Cycle-Collector Characteristics
(M63824KP)
500
1
2
200
•The collector current values
represent the current per circuit.
•Repeated frequencyy ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
0
2
3
4
5
6
7
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 85°C
Duty cycle (%)
300
0
200
Duty cycle (%)
400
100
1
0
100
20
40
60
Duty cycle (%)
80
3
4
5
6
7
100
Collector current Ic (mA)
100
3
4
5
6
7
300
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle
represents the value
of the simultaneously
-operated circuit.
•Ta = 85°C
400
300
1
200
2
34
56
7
100
0
0
20
40
60
80
100
Duty cycle (%)
Feb.2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63824GP/KP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
Output Saturation Voltage-Collector
Current Characteristics
100
Output Saturation Voltage-Collector
Current Characteristics
500
II=500µA
80
Collector current Ic (mA)
Collector current Ic (mA)
II=500µA
60
Ta=–40°C
40
Ta=25°C
Ta=85°C
20
0
0
0.2
0.4
0.6
0.8
400
300
200
Ta=25°C
100
0
1.0
Ta=85°C
0
DC Amplification Factor
Collector Current Characteristics
1.6
Grounded Emitter Transfer Characteristics
VCE=2V
Ta=85°C
Collector current Ic (mA)
DC amplification factor hFE
1.2
500
VCE=2V
7
5
0.8
0.4
Output saturation voltage VCE(sat) (V)
Output saturation voltage VCE(sat) (V)
104
Ta=–40°C
400
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3
2
103
7
5
Ta=–40°C
Ta=25°C
3
2
300
200
Ta=85°C
Ta=25°C
100
Ta=–40°C
102
101
2
3
5 7 102
2
5 7 103
3
0
0
0.4
0.8
1.2
1.6
2.0
Input voltage VI (V)
Collector current IC (mA)
Input Characteristics
4
Input current II (mA)
Ta=25°C
3
Ta=–40°C
2
Ta=85°C
1
0
0
1
2
3
4
5
Input voltage VI (V)
Feb.2003