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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63823P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
M63823P, M63823FP and M63823GP are seven-circuit
Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor
integrated circuits perform high-current driving with extremely low input-current supply.
Production lineup has been newly expanded with the addition of 225mil (GP) package.
M63823P and M63823FP have the same pin connection as
M54523P and M54523FP. (Compatible with M54523P and
M54523FP) More over, the features of M63823P and
M63823FP are equal or superior to those of M54523P and
M54523FP.
PIN CONFIGURATION
INPUT
IN1→ 1
16 →O1
IN2→ 2
15 →O2
IN3→ 3
14 →O3
IN4→ 4
13 →O4
IN5→ 5
12 →O5
IN6→ 6
11 →O6
IN7→ 7
10 →O7
GND
9
8
OUTPUT
→COM COMMON
16P4(P)
16P2N-A(FP)
Package type 16P2S-A(GP)
FEATURES
● Three package configurations (P, FP and GP)
● Pin connection Compatible with M54523P and M54523FP
●
●
●
●
●
High breakdown voltage (BVCEO ≥ 50V)
High-current driving (IC(max) = 500mA)
With clamping diodes
PMOS Compatible input
Wide operating temperature range (Ta = –40 to +85°C)
CIRCUIT DIAGRAM
COM
OUTPUT
INPUT
2.7k
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APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
7.2k
3k
GND
The seven circuits share the COM and GND
FUNCTION
The M63823P, M63823FP and M63823GP each have seven
circuits consisting of NPN Darlington transistors. These ICs
have resistance of 2.7kΩ between input transistor bases and
input pins. A spike-killer clamping diode is provided between
each output pin (collector) and COM pin (pin 9). The output
transistor emitters are all connected to the GND pin (pin 8).
The collector current is 500mA maximum. Collector-emitter
supply voltage is 50V maximum.The M63823FP and
M63823GP is enclosed in molded small flat package, enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
(Unless otherwise noted, Ta = –40 ~ +85°C)
Parameter
Collector-emitter voltage
Collector current
Conditions
Output, H
Current per circuit output, L
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Unit : Ω
Ratings
–0.5 ~ +50
500
–0.5 ~ +30
500
50
Ta = 25°C, when mounted on board
1.47(P)/1.00(FP)/0.80(GP)
–40 ~ +85
–55 ~ +125
Unit
V
mA
V
mA
V
W
°C
°C
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63823P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
Limits
Parameter
VO
min
0
typ
—
max
50
0
—
400
0
—
200
3.85
—
25
3.4
—
—
25
Output voltage
Collector current
(Current per 1 circuit when 7 circuits
are coming on simultaneously)
IC
VIH
“H” input voltage
VIL
“L” input voltage
Duty Cycle
P : no more than 8%
FP : no more than 5%
GP : no more than 4%
Duty Cycle
P : no more than 30%
FP : no more than 20%
GP : no more than 15%
IC ≤ 400mA
Unit
V
mA
IC ≤ 200mA
0
0.6
V
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
V (BR) CEO
Collector-emitter breakdown voltage
VCE(sat)
Collector-emitter saturation voltage II = 350µA, IC = 200mA
II = 250µA, IC = 100mA
Input current
VI = 3.85V
Clamping diode forward volltage
IF = 350mA
Clamping diode reverse current
VR = 50V
DC amplification factor
VCE = 4V, I C = 350mA
II
VF
IR
h FE
Limits
Test conditions
ICEO = 100µA
II = 500µA, IC = 350mA
min
50
—
—
typ
—
1.2
1.0
max
—
1.6
1.3
—
—
—
—
1000
0.9
0.9
1.4
—
2000
1.1
1.4
2.0
100
—
Unit
V
V
mA
V
µA
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—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Limits
Test conditions
min
CL = 15pF (note 1)
typ
max
—
15
—
—
350
—
Unit
ns
ns
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
INPUT
Vo
INPUT
50%
50%
Measured device
RL
OPEN
OUTPUT
PG
OUTPUT
50Ω
50%
50%
CL
ton
toff
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω
VP = 3.85VP-P
(2)Input-output conditions : RL = 25Ω, Vo = 10V
(3)Electrostatic capacity CL includes floating capacitance
at connections and input capacitance at probes
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63823P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Collector Current Characteristics
Thermal Derating Factor Characteristics
2.0
500
M63823FP
1.0
0.744
M63823GP
0.520
0.418
0.5
400
300
200
Ta = 25°C
100
Ta = –40°C
Ta = 85°C
0
0
25
50
75 85
0
100
0
1.0
0.5
1.5
Ambient temperature Ta (°C)
Output saturation voltage VCE(sat) (V)
Duty Cycle-Collector Characteristics
(M63823P)
Duty Cycle-Collector Characteristics
(M63823P)
500
Collector current Ic (mA)
Collector current Ic (mA)
1.5 M63823P
400
2.0
500
1
Collector current Ic (mA)
Power dissipation Pd(max) (W)
II = 500µA
400
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2
300
3
200
•The collector current values
represent the current per circuit.
•Repeated frequencyy ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
100
0
0
20
40
60
80
4
5
6
7
0
20
40
60
80
Duty Cycle-Collector Characteristics
(M63823FP)
Duty Cycle-Collector Characteristics
(M63823FP)
3
4
5
6
7
100
500
1
2
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
20
40
60
Duty cycle (%)
80
3
4
5
6
7
100
Collector current Ic (mA)
Collector current Ic (mA)
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 85°C
100
Duty cycle (%)
300
0
2
200
Duty cycle (%)
400
0
300
0
100
500
100
1
400
300
1
200
2
3
100
0
4
•The collector current values
represent the current per circuit.
5
•Repeated frequency ≥ 10Hz
76
•The value the circle represents the
value of the simultaneously-operated circuit. •Ta = 85°C
0
20
40
60
80
100
Duty cycle (%)
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63823P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
Duty Cycle-Collector Characteristics
(M63823GP)
Duty Cycle-Collector Characteristics
(M63823GP)
500
400
1
300
2
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
100
0
3
4
5
6
7
20
0
40
60
80
Collector current Ic (mA)
Collector current Ic (mA)
500
1
200
2
100
0
3
4
5
6
7
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit. •Ta = 85°C
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
DC Amplification Factor
Collector Current Characteristics
Grounded Emitter Transfer Characteristics
500
VCE = 4V
Ta = 85°C
Collector current Ic (mA)
DC amplification factor hFE
300
0
100
104
7
5
400
3
400
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2
103
Ta = –40°C
7
5
Ta= 25°C
3
200
Ta = 85°C
Ta = 25°C
100
2
102
101
Ta = –40°C
2
3
5 7 102
2
0
5 7 103
3
1
2
3
4
Input voltage VI (V)
Input Characteristics
Clamping Diode Characteristics
5
Ta = –40°C
Ta = 25°C
8
4
Ta = 85°C
0
5
10
15
Input voltage VI (V)
20
25
Forward bias current IF (mA)
500
12
0
0
Collector current IcC (mA)
16
Input Current II (mA)
300
400
300
200
Ta = 25°C
100
Ta = 85°C
0
0
0.5
Ta = –40°C
1.0
1.5
2.0
Forward bias voltage VF (V)
Jan. 2000