Download M63813FP

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
RY
A
N
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M63813P/FP/GP/KP
.
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This
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ice: ramet
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P
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN
transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current
supply.
PIN CONFIGURATION
INPUT
FEATURES
● Four package configurations (P, FP, GP and KP)
● Medium breakdown voltage (BVCEO ≥ 35V)
● Synchronizing current (IC(max) = 300mA)
● With clamping diodes
● Low output saturation voltage
● Wide operating temperature range (Ta = –40 to +85°C)
IN1→
1
16 →O1
IN2→
2
15 →O2
INz3→
3
14 →O3
IN4→
4
13 →O4
IN5→
5
12 →O5
IN6→
6
11 →O6
IN7→
7
10 →O7
GND
8
9
Package type
OUTPUT
→COM COMMOM
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
16P2Z-A(KP)
CIRCUIT DIAGRAM
COM
OUTPUT
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
INPUT
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2.7k
10k
GND
The seven circuits share the COM and GND.
FUNCTION
The M63813P/FP/GP/KP each have seven circuits consisting of NPN transistor. A spike-killer clamping diode is provided between each output pin (collector) and COM pin
(pin9). The transistor emitters are all connected to the GND
pin (pin 8). The transistors allow synchronous flow of 300mA
collector current. A maximum of 35V voltage can be applied
between the collector and emitter.
ABSOLUTE MAXIMUM RATINGS
Symbol
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit: Ω
(Unless otherwise noted, Ta = –40 ~ +85°C)
Parameter
Conditions
VCEO
Collector-emitter voltage
Output, H
IC
VI
Collector current
Current per circuit output, L
IF
VR
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Pd
Power dissipation
Topr
Tstg
Operating temperature
Storage temperature
Ta = 25°C, when mounted
on board
M63813P
M63813FP
M63813GP
M63813KP
Ratings
Unit
–0.5 ~ +35
300
V
mA
–0.5 ~ +35
300
V
mA
35
1.47
V
1.00
0.80
W
0.78
–40 ~ +85
–55 ~ +125
°C
°C
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
RY
A
N
I
.
.
tion
nge
ifica to cha
pec
t
al s subjec
in
f
ot a
are
is n limits
This
ric
ice: ramet
t
o
N
e pa
Som
IM
REL
M63813P/FP/GP/KP
P
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
Parameter
Limits
Test conditions
Output voltage
VO
Duty Cycle no more than 45%
M63813P
Collector current
(Current per 1 cir-
Duty Cycle no more than 100%
Duty Cycle no more than 30%
M63813FP
cuit when 7 circuits
IC
are coming on simultaneously)
M63813GP
M63813KP
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
VIN
Input voltage
min
typ
max
0
0
—
—
35
250
0
0
0
0
—
—
—
—
160
250
130
250
0
0
0
0
—
—
—
—
120
250
120
20
Unit
V
mA
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
V (BR) CEO
Collector-emitter breakdown voltage
VCE(sat)
VIN(on)
VF
IR
Limits
Test conditions
ICEO = 10µA
IIN = 1mA, IC = 10mA
Collector-emitter saturation voltage
IIN = 2mA, IC = 150mA
“On” input voltage
IIN = 1mA, IC = 10mA
min
35
—
—
2.4
typ
—
—
—
35
max
—
0.2
0.8
4.2
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
—
—
50
1.2
—
—
2.0
10
—
IF = 250mA
VR = 35V
VCE = 10V, IC = 10mA
Unit
V
V
V
V
µA
—
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h FE
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Limits
Test conditions
CL = 15pF (note 1)
min
typ
max
—
125
—
—
250
—
Unit
ns
ns
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
INPUT
Vo
50%
Measured device
50%
INPUT
RL
OPEN
OUTPUT
PG
OUTPUT
50Ω
CL
50%
ton
50%
toff
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VIH = 3V
(2)Input-output conditions : RL = 220Ω, Vo = 35V
(3)Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
RY
A
N
I
.
.
tion
nge
ifica to cha
pec
t
al s subjec
in
f
ot a
are
is n limits
This
ric
ice: ramet
t
o
N
e pa
Som
IM
REL
M63813P/FP/GP/KP
P
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Input Characteristics
2.0
8
1.5 M63813P
6
Ta = –40°C
Input current II (mA)
Power dissipation Pd (W)
Thermal Derating Factor Characteristics
M63813FP
1.0
M63813GP
0.744
M63813KP
0.520
0.418
0.406
0.5
0
0
25
50
75 85
Ta = 25°C
Ta = 85°C
2
0
100
0
5
10
15
Ambient temperature Ta (°C)
Input voltage VI (V)
Duty Cycle-Collector Characteristics
(M63813P)
Duty Cycle-Collector Characteristics
(M63813P)
20
400
1~4
5
6
7
300
Collector current Ic (mA)
400
Collector current Ic (mA)
4
300
1~2
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200
100
0
0
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
20
40
60
80
100
0
5
6
7
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
20
40
60
80
Duty cycle (%)
Duty cycle (%)
Duty Cycle-Collector Characteristics
(M63813FP)
Duty Cycle-Collector Characteristics
(M63813FP)
100
400
1~3
300
4
5
6
7
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
100
0
20
40
60
Duty cycle (%)
80
100
Collector current Ic (mA)
Collector current Ic (mA)
200
0
100
400
0
3
4
300
1
2
200
100
0
0
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
20
40
60
80
3
4
5
6
7
100
Duty cycle (%)
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
RY
A
N
I
.
.
tion
nge
ifica to cha
pec
t
al s subjec
in
f
ot a
are
is n limits
This
ric
ice: ramet
t
o
N
e pa
Som
IM
REL
M63813P/FP/GP/KP
P
Duty Cycle-Collector Characteristics
(M63813GP/KP)
400
Duty Cycle-Collector Characteristics
(M63813GP/KP)
400
300
1~2
3
4
5
6
7
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
100
0
0
20
40
60
80
Collector current Ic (mA)
Collector current Ic (mA)
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
1
2
200
3
4
56
7
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
100
0
100
0
20
40
60
100
80
Duty cycle (%)
Duty cycle (%)
Output Saturation Voltage
Collector Current Characteristics
Output Saturation Voltage
Collector Current Characteristics
250
100
Ta = 25°C
IB = 3mA
200
Ta = 25°C VI = 7V
IB = 2mA
IB = 1.5mA
Collector current Ic (mA)
Collector current Ic (mA)
300
80
VI = 6V
VI = 5V
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IB = 1mA
150
100
IB = 0.5mA
50
0
0
0.2
0.4
0.6
20
0
0.05
0.10
0.15
0.20
Output Saturation Voltage
Collector Current Characteristics
DC Amplification Factor
Collector Current Characteristics
103
DC amplification factor hFE
Collector current Ic (mA)
VI = 2V
Output saturation voltage VCE(sat) (V)
Ta = –40°C
Ta = 25°C
Ta = 85°C
60
40
20
0
40
Output saturation voltage VCE(sat) (V)
II = 2mA
0
VI = 4V
VI = 3V
0
0.8
100
80
60
0.05
0.10
0.15
0.20
Output saturation voltage VCE(sat) (V)
7
5
VCE 10V
Ta = 25°C
3
2
102
7
5
3
2
101
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Collector current Ic (mA)
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
RY
A
N
I
.
.
tion
nge
ifica to cha
pec
t
al s subjec
in
f
ot a
are
is n limits
This
ric
ice: ramet
t
o
N
e pa
Som
IM
REL
M63813P/FP/GP/KP
P
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Grounded Emitter Transfer Characteristics
Grounded Emitter Transfer Characteristics
50
250
VCE = 4V
40
Ta = 25°C
30
Ta = 85°C
Ta = –40°C
20
10
0
0
0.4
0.8
1.2
1.6
2.0
Input voltage VI (V)
Collector current Ic (mA)
Collector current Ic (mA)
VCE = 4V
200
Ta = 85°C
150
Ta = 25°C
100
Ta = –40°C
50
0
0
1
2
3
4
5
Input voltage VI (V)
Clamping Diode Characteristics
Forward bisa current IF (mA)
250
200
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150
Ta = 85°C
100
Ta = 25°C
Ta = –40°C
50
0
0
0.4
0.8
1.2
1.6
2.0
Forward bias voltage VF (V)
Jan. 2000