Download M63812FP

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63812P, M63812FP, M63812GP and M63812KP are
seven-circuit Singe transistor arrays with clamping diodes.
The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with
extremely low input-current supply.
PIN CONFIGURATION
INPUT
FEATURES
● Four package configurations (P, FP, GP and KP)
● Medium breakdown voltage (BVCEO ≥ 35V)
● Synchronizing current (IC(max) = 300mA)
● With clamping diodes
● With zener diodes
● Low output saturation voltage
● Wide operating temperature range (Ta=–40 to +85°C)
16 →O1
IN1→
1
IN2→
2
15 →O2
IN3→
3
14 →O3
IN4→
4
13 →O4
IN5→
5
12 →O5
IN6→
6
11 →O6
IN7→
7
10 →O7
GND
8
OUTPUT
→COM COMMOM
9
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
16P2Z-A(KP)
Package type
CIRCUIT DIAGRAM
COM
OUTPUT
Vz=7V
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
INPUT
www.BDTIC.com/MITSUBISHI
10.5k
10k
GND
The seven circuits share the COM and GND.
FUNCTION
The M63812P, M63812FP, M63812GP and M63812KP each
have seven circuits consisting of NPN transistor.A spikekiller clamping diode is provided between each output pin
(collector) and COM pin (pin9). The transistor emitters are all
connected to the GND pin (pin 8). The transistors allow synchronous flow of 300mA collector current. A maximum of 35V
voltage can be applied between the collector and emitter.
ABSOLUTE MAXIMUM RATINGS
Symbol
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit: Ω
(Unless otherwise noted, Ta = –40 ~ +85°C)
Parameter
Conditions
VCEO
Collector-emitter voltage
Output, H
IC
VI
Collector current
Current per circuit output, L
IF
VR
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Pd
Power dissipation
Topr
Tstg
Operating temperature
Storage temperature
Ta = 25°C, when mounted
on board
M63812P
M63812FP
M63812GP
M63812KP
Ratings
Unit
–0.5 ~ +35
300
V
mA
–0.5 ~ +35
300
V
mA
35
1.47
V
1.00
0.80
W
0.78
–40 ~ +85
–55 ~ +125
°C
°C
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
Parameter
Limits
Test conditions
Output voltage
VO
Duty Cycle no more than 45%
M63812P
Collector current
(Current per 1 cir-
Duty Cycle no more than 100%
Duty Cycle no more than 30%
M63812FP
Duty Cycle no more than 100%
Duty Cycle no more than 24%
cuit when 7 circuits
IC
are coming on simultaneously)
M63812GP
Duty Cycle no more than 100%
Duty Cycle no more than 24%
M63812KP
Duty Cycle no more than 100%
VIN
Input voltage
min
typ
max
0
0
—
—
35
250
0
0
0
0
—
—
—
—
160
250
130
250
0
0
0
0
—
—
—
—
120
250
120
30
Unit
V
mA
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
V (BR) CEO
Collector-emitter breakdown voltage
VCE(sat)
VIN(on)
VR
IR
Limits
Test conditions
ICEO = 10µA
IIN = 1mA, IC = 10mA
Collector-emitter saturation voltage
IIN = 2mA, IC = 150mA
“On” input voltage
IIN = 1mA, IC = 10mA
min
35
—
—
13
typ
—
—
—
19
max
—
0.2
0.8
23
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
—
—
50
1.2
—
—
2.0
10
—
IF = 250mA
VR = 35V
VCE = 10V, IC = 10mA
Unit
V
V
V
V
µA
—
www.BDTIC.com/MITSUBISHI
h FE
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Limits
Test conditions
CL = 15pF (note 1)
min
typ
max
—
140
—
—
240
—
Unit
ns
ns
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
INPUT
Vo
50%
Measured device
50%
INPUT
RL
OPEN
PG
OUTPUT
50%
50Ω
CL
50%
OUTPUT
ton
toff
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VIH = 18V
(2)Input-output conditions : RL=220Ω,Vo=35V
(3)Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Input Characteristics
Thermal Derating Factor Characteristics
4
M63812P
1.5
1.0
Input current II (mA)
Power dissipation Pd (W)
2.0
M63812FP
M63812GP
0.744
M63812KP
0.520
0.418
0.406
0.5
0
0
25
75 85
50
Ta = –40°C
Ta = 25°C
Ta=25
2
1
Ta=85°C
0
0
100
5
10
15
20
25
Ambient temperature Ta (°C)
Input voltage VI (V)
Duty-Cycle-Collector Characteristics
(M63812P)
Duty-Cycle-Collector Characteristics
(M63812P)
30
400
1~4
5
6
7
300
Collector current Ic (mA)
400
Collector current Ic (mA)
3
300
1~2
www.BDTIC.com/MITSUBISHI
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
100
0
0
20
40
60
80
100
0
5
6
7
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
20
40
60
80
Duty cycle (%)
Duty cycle (%)
Duty-Cycle-Collector Characteristics
(M63812FP)
Duty-Cycle-Collector Characteristics
(M63812FP)
100
400
1~3
300
4
5
6
7
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
100
0
20
40
60
Duty cycle (%)
80
100
Collector current Ic (mA)
Collector current Ic (mA)
200
0
100
400
0
3
4
300
1
2
200
100
0
0
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
20
40
60
80
3
4
5
6
7
100
Duty cycle (%)
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Duty Cycle-Collector Characteristics
(M63812GP/KP)
400
300
1~2
3
4
5
6
7
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
100
0
0
20
40
60
80
Collector current Ic (mA)
Collector current Ic (mA)
400
Duty Cycle-Collector Characteristics
(M63812GP/KP)
2
200
3
4
56
7
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
100
0
20
40
60
80
Duty cycle (%)
Duty cycle (%)
Output Saturation Voltage
Collector Current Characteristics
Output Saturation Voltage
Collector Current Characteristics
100
100
Ta = 25°C
IB = 2mA
IB = 3mA
Ta = 25°C VI = 32V
IB = 1.5mA
Collector current Ic (mA)
Collector current Ic (mA)
1
0
100
250
200
300
80
VI = 28V
VI = 24V
www.BDTIC.com/MITSUBISHI
IB = 1mA
150
100
IB = 0.5mA
50
0
0
0.2
0.4
0.6
20
0
0.05
0.10
0.15
0.20
Output Saturation Voltage
Collector Current Characteristics
DC Amplification Factor
Collector Current Characteristics
103
DC amplification factor hFE
Collector current Ic (mA)
VI = 12V
40
Output saturation voltage VCE(sat) (V)
Ta = –40°C
Ta = 25°C
Ta = 85°C
60
40
20
0
VI = 16V
Output saturation voltage VCE(sat) (V)
II = 2mA
0
60
0
0.8
100
80
VI = 20V
0.05
0.10
0.15
0.20
Output saturation voltage VCE(sat) (V)
7
5
VCE 10V
Ta = 25°C
3
2
102
7
5
3
2
101
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Collector current Ic (mA)
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Grounded Emitter Transfer Characteristics
Grounded Emitter Transfer Characteristics
50
250
VCE = 4V
40
30
Ta = 25°C
20
Ta = 85°C
Ta = –40°C
10
0
0
2
4
6
8
10
12
Input voltage VI (V)
Collector current Ic (mA)
Collector current Ic (mA)
VCE = 4V
200
150
Ta = 25°C
Ta = 85°C
100
Ta = –40°C
50
0
0
4
8
12
16
20
Input voltage VI (V)
Clamping Diode Characteristics
Forward bisa current IF (mA)
250
200
www.BDTIC.com/MITSUBISHI
150
Ta = 85°C
100
Ta = 25°C
Ta = –40°C
50
0
0
0.4
0.8
1.2
1.6
2.0
Forward bias voltage VF (V)
Jan. 2000