Download M63803FP

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63803P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY
DESCRIPTION
M63803P, M63803FP, M63803GP and M63803KP are
seven-circuit Singe transistor arrays. The circuits are made
of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
FEATURES
● Four package configurations (P, FP, GP and KP)
● Medium breakdown voltage (BVCEO ≥ 35V)
● Synchronizing current (IC(max) = 300mA)
● Low output saturation voltage
● Wide operating temperature range (Ta = –40 to +85°C)
PIN CONFIGURATION
INPUT
IN1→ 1
16 → O1
IN2→ 2
15 → O2
IN3→ 3
14 → O3
IN4→ 4
13 → O4
IN5→ 5
12 → O5
IN6→ 6
11 → O6
IN7→ 7
10 → O7
GND
8
OUTPUT
NC
9
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
Package type 16P2Z-A(KP)
NC : No connection
CIRCUIT DIAGRAM
OUTPUT
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
INPUT
10.5k
www.BDTIC.com/MITSUBISHI
10k
GND
FUNCTION
The M63803P, M63803FP, M63803GP and M63803KP each
have seven circuits consisting of NPN transistor. The transistor emitters are all connected to the GND pin (pin 8)
The transistors allow synchronous flow of 300mA collector
current. A maximum of 35V voltage can be applied
between the collector and emitter.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
IC
VI
Pd
(Unless otherwise noted, Ta = –40 ~ +85°C)
Parameter
Collector-emitter voltage
Collector current
Conditions
Output, H
Current per circuit output, L
Input voltage
Power dissipation
Ta = 25°C, when mounted
on board
Topr
Tstg
The seven circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit : Ω
Operating temperature
Storage temperature
M63803P
M63803FP
M63803GP
M63803KP
Ratings
–0.5 ~ +35
300
Unit
V
mA
–0.5 ~ +35
1.47
V
1.00
0.80
0.78
–40 ~ +85
–55 ~ +125
W
°C
°C
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63803P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
Parameter
Limits
Test conditions
Output voltage
VO
Duty Cycle no more than 45%
M63803P
Collector current
(Current per 1 cir-
M63803FP
cuit when 7 circuits
IC
are coming on simultaneously)
M63803GP
M63803KP
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
VIN
Input voltage
min
typ
max
0
0
—
—
35
250
0
0
0
0
—
—
—
—
160
250
130
250
0
0
0
0
—
—
—
—
120
250
120
20
Unit
V
mA
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
V (BR) CEO
Collector-emitter breakdown voltage
VCE(sat)
VIN(on)
h FE
Limits
Test conditions
ICEO = 10µA
IIN = 1mA, IC = 10mA
Collector-emitter saturation voltage
IIN = 2mA, IC = 150mA
“On” input voltage
IIN = 1mA, IC = 10mA
DC amplification factor
VCE = 10V, IC = 10mA
min
35
—
—
2.4
typ
—
—
—
3.5
max
—
0.2
0.8
4.2
50
—
—
Unit
V
V
V
—
www.BDTIC.com/MITSUBISHI
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
CL = 15pF (note 1)
min
typ
max
—
125
—
—
250
—
Unit
ns
ns
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
INPUT
Limits
Test conditions
Vo
50%
50%
INPUT
Measured device
RL
OUTPUT
PG
50Ω
CL
OUTPUT
50%
50%
ton
toff
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VIH = 3V
(2)Input-output conditions : RL = 220Ω, Vo = 35V
(3)Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63803P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY
TYPICAL CHARACTERISTICS
Input Characteristics
8
1.5 M63803P
6
Ta = –40°C
Input current II (mA)
Power dissipation Pd (W)
Thermal Derating Factor Characteristics
2.0
M63803FP
1.0
M63803GP
0.744
M63803KP
0.520
0.418
0.406
0.5
Ta = 25°C
Ta = 85°C
2
0
0
0
25
50
75 85
0
100
5
10
15
Ambient temperature Ta (°C)
Input voltage VI (V)
Duty Cycle-Collector Characteristics
(M63803P)
Duty Cycle-Collector Characteristics
(M63803P)
400
20
400
300
1~4
5
6
7
Collector current Ic (mA)
Collector current Ic (mA)
4
1~2
300
www.BDTIC.com/MITSUBISHI
200
100
0
0
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
20
40
60
80
0
20
40
60
80
Duty Cycle-Collector Characteristics
(M63803FP)
Duty Cycle-Collector Characteristics
(M63803FP)
100
400
1~3
4
5
6
7
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
20
40
60
Duty cycle (%)
80
100
Collector current Ic (mA)
Collector current Ic (mA)
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
100
Duty cycle (%)
200
0
5
6
7
Duty cycle (%)
300
0
200
0
100
400
100
3
4
300
1
2
200
100
0
0
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
20
40
60
80
3
4
5
6
7
100
Duty cycle (%)
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63803P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY
Duty Cycle-Collector Characteristics
(M63803GP/KP)
400
300
1~ 2
3
4
5
6
7
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
100
0
0
20
40
60
80
Collector current Ic (mA)
Collector current Ic (mA)
400
1
2
200
100
0
3
4
56
7
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
20
40
60
80
Duty cycle (%)
Duty cycle (%)
Output Saturation Voltage
Collector Current Characteristics
Output Saturation Voltage
Collector Current Characteristics
100
100
250
Ta = 25°C
VI = 6V
IB = 3mA
200
Ta = 25°C VI = 7V
IB = 2mA
IB = 1.5mA
Collector current Ic (mA)
Collector current Ic (mA)
300
0
100
Duty Cycle-Collector Characteristics
(M63803GP/KP)
VI = 5V
80
www.BDTIC.com/MITSUBISHI
IB = 1mA
150
100
IB = 0.5mA
50
0
0
0.2
0.4
0.6
VI = 2V
20
0
0.05
0.10
0.15
0.20
Output saturation voltage VCE(sat) (V)
Output Saturation Voltage
Collector Current Characteristics
DC Amplification Factor
Collector Current Characteristics
103
Ta = –40°C
DC amplification factor hFE
Collector current Ic (mA)
40
Output saturation voltage VCE(sat) (V)
II = 2mA
Ta = 25°C
Ta = 85°C
60
40
20
0
0
VI = 4V
VI = 3V
0
0.8
100
80
60
0.05
0.10
0.15
0.20
Output saturation voltage VCE(sat) (V)
7 VCE = 10V
Ta = 25°C
5
3
2
102
7
5
3
2
101
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Collector current Ic (mA)
Jan. 2000