Download M54580FP

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54580P/FP
7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54580P and M54580FP are seven-circuit output-sourcing
Darlington transistor arrays. The circuits are made of PNP
and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
PIN CONFIGURATION







INPUT 







FEATURES
Á High breakdown voltage (BV CEO ≥ 50V)
Á High-current driving (Io(max) = –150mA)
Á Active L-level input
Á With input diodes
Á Wide operating temperature range (Ta = –20 to +75°C)
IN1→ 1
16 →O1 
IN2→ 2
15 →O2 

IN3→ 3
14 →O3 
IN4→ 4
13 →O4  OUTPUT
IN5→ 5
12 →O5 
IN6→ 6
11 →O6 
IN7→ 7
10 →O7 
GND







9
8
VS
16P4(P)
Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
APPLICATION
Drives of relays, printers and indication elements such as
LEDs, fluorescent display tubes and lamps, and interfaces
between MOS-bipolar logic systems and relays, solenoids,
or small motors
VS
30K
7K
INPUT
7K
www.BDTIC.com/MITSUBISHI
OUTPUT
50K
FUNCTION
The M54580P and M54580FP each have seven circuits,
which are made of output current-sourcing Darlington transistors consisting of PNP and NPN transistors. Each PNP
transistor has a diode and resistance of 7kΩ between the
base and input pin. Its emitter and NPN transistor collectors
are connected to the VS pin (pin 9). Resistance of 50kΩ is
connected between each output pin and GND pin (pin 8).
Output current is 150mA maximum. Supply voltage VS is 50V
maximum.
The M54580FP is enclosed in a molded small flat package,
enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
Parameter
Collector-emitter voltage
VS
VI
Supply voltage
IO
Input voltage
Output current
Pd
Topr
Power dissipation
Operating temperature
Tstg
Storage temperature
GND
The seven circuits share the VS and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Conditions
Output, L
Current per circuit output, H
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +50
Unit
V
50
–0.5 ~ VS
V
V
–150
mA
1.47(P)/1.00(FP)
–20 ~ +75
W
°C
–55 ~ +125
°C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54580P/FP
7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
RECOMMENDED OPERATING CONDITIONS
Symbol
(Unless otherwise noted, Ta = –20 ~ +75°C)
min
Limits
typ
4
—
50
0
—
–100
0
—
–50
VS–0.4
—
0
—
VS
VS–3.2
Parameter
Supply voltage
VS
VIH
Output current
(Current per 1 circuit when 7 circuits
are coming on simultaneously)
“H” input voltage
VIL
“L” input voltage
IO
Duty Cycle
P : no more than 85%
FP : no more than 50%
Duty Cycle
P : no more than 100%
FP : no more than 100%
ELECTRICAL CHARACTERISTICS
max
Unit
V
mA
V
V
(Unless otherwise noted, Ta = –20 ~ +75°C)
Limits
Symbol
Parameter
Test conditions
V (BR) CEO
Collector-emitter breakdown voltage
VCE (sat)
VI = VS–3.2V, IO = –100mA
Collector-emitter saturation voltage
VI = VS–3.2V, IO = –50mA
II
Input current
VI = VS–3.5V
VI = VS–6V
IR
h FE
Clamping diode reverse current
DC amplification factor
VI = 40V
VCE = 4V, VS = 10V, I C = –100mA, Ta = 25°C
min
50
ICEO = 100µA
typ+
—
—
0.9
1.5
—
—
0.8
–0.3
1.2
–0.6
—
–0.65
–0.95
—
—
3000
100
—
800
Unit
max
—
V
V
mA
µA
—
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
www.BDTIC.com/MITSUBISHI
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
ton
toff
Parameter
Turn-on time
CL = 15pF (note 1)
Turn-off time
NOTE 1 TEST CIRCUIT
INPUT
Limits
Test conditions
min
typ
max
—
—
200
7500
—
—
Unit
ns
ns
TIMING DIAGRAM
VS
INPUT
50%
Measured device
50%
OUTPUT
PG
50Ω
RL
CL
50%
50%
OUTPUT
ton
toff
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VI = 0.8 to 4V
(2) Input-output conditions : RL = 40Ω, , VS = 4V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54580P/FP
7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Output Current Characteristics
Thermal Derating Factor Characteristics
–200
2.0
M54580P
1.5
Output current IO (mA)
Power dissipation Pd (W)
VS = 10V
VI = 6.8V
M54580FP
1.0
0.5
–150
–100
Ta = 75°C
Ta = 25°C
–50
Ta = –20°C
0
0
25
50
75
0
100
0.5
1.0
1.5
2.0
Output saturation voltage VCE (sat) (V)
Ambient temperature Ta (°C)
Duty-Cycle-Output Current Characteristics
(M54580P)
–200
Duty-Cycle-Output Current Characteristics
(M54580P)
–200
–160
–160
➀ to ➄
➅
➆
Output current IO (mA)
Output current IO (mA)
0
www.BDTIC.com/MITSUBISHI
–120
–80
•The output current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
–40
0
0
20
40
60
80
–120
➄
➅
➆
–80
•The output current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
–40
0
100
➀ to ➂
➃
0
20
60
80
100
Duty cycle (%)
Duty cycle (%)
Duty-Cycle-Output Current Characteristics
(M54580FP)
–200
Duty-Cycle-Output Current Characteristics
(M54580FP)
–200
–160
–160
➀ to ➂
➃
➄
➅
➆
–120
–80
•The output current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
–40
0
0
20
40
60
Duty cycle (%)
80
100
Output current IO (mA)
Output current IO (mA)
40
➀ to ➁
–120
➂
–80
➃
➄
➅
➆
•The output current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
–40
0
0
20
40
60
80
100
Duty cycle (%)
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54580P/FP
7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
DC Amplification Factor
Output Current Characteristics
Grounded Emitter Transfer Characteristics
104
–200
7
DC amplification factor hFE
Output current IO (mA)
VS = 10V
VCE = 4V
–150
–100
Ta = 75°C
Ta = 25°C
Ta = –20°C
–50
0
0
1.0
2.0
3.0
4.0
Supply voltage-Input voltage VS–VI (V)
VS = 10V
VCE = 4V
Ta = 75°C
Ta = 25°C
5
3
Ta = –20°C
2
103
7
5
3
2
102 1
10
2
3
5 7 102
2
3
5 7 103
Output current IO (mA)
Input Characteristics
–5
VS = 20V
–4
Input current II (mA)
www.BDTIC.com/MITSUBISHI
–3
Ta = –20°C
Ta = 25°C
–2
–1
0
Ta = 75°C
0
5
10
15
20
Supply voltage-Input voltage VS–VI (V)
Aug. 1999