Download M54523FP

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54523P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
M54523P and M54523FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
PIN CONFIGURATION
INPUT
FEATURES
● High breakdown voltage (BVCEO ≥ 50V)
● High-current driving (IC(max) = 500mA)
● With clamping diodes
● Driving available with PMOS IC ouput
IN1→ 1
16 →O1
IN2→ 2
15 →O2
IN3→ 3
14 →O3
IN4→ 4
13 →O4
IN5→ 5
12 →O5
IN6→ 6
11 →O6
IN7→ 7
10 →O7
GND
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and interfaces between standard
MOS-bipolar logic IC
FUNCTION
The M54523P and M54523FP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 2.7kΩ between input transistor bases and input
pins. A spike-killer clamping diode is provided between each
output pin (collector) and COM pin. The output transistor
emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector-emitter supply
voltage is 50V maximum.The M54523FP is enclosed in a
molded small flat package, enabling space-saving design.
9
8
OUTPUT
COM COMMON
16P4(P)
Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
COM
OUTPUT
INPUT
2.7k
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5k
3k
GND
The seven circuits share the COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
(Unless otherwise noted, Ta = –20 ~ +75°C)
Parameter
Collector-emitter voltage
Collector current
Conditions
Output, H
Current per circuit output, L
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Unit : Ω
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +50
500
–0.5 ~ +30
500
50
1.47(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
Unit
V
mA
V
mA
V
W
°C
°C
Feb.2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54523P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
Symbol
(Unless otherwise noted, Ta = –20 ~ +75°C)
Limits
Parameter
VO
Output voltage
Duty Cycle
P : no more than 8%
FP : no more than 8%
Duty Cycle
P : no more than 30%
FP : no more than 25%
IC ≤ 400mA
“H” input voltage
IC ≤ 200mA
“L” input voltage
Collector current
(Current per 1 circuit when 7 circuits
are coming on simultaneously)
IC
VIH
VIL
ELECTRICAL CHARACTERISTICS
Parameter
V (BR) CEO
Collector-emitter breakdown voltage
II
VF
IR
hFE
typ
—
max
50
0
—
400
Unit
V
mA
0
—
200
3.85
3.4
0
—
—
—
25
25
0.6
V
V
(Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCE(sat)
min
0
Limits
Test conditions
min
50
—
—
—
—
—
—
1000
ICEO = 100µA
VI = 3.85V, IC = 400mA
Collector-emitter saturation voltage
VI = 3.4V, IC = 200mA
VI = 3.85V
Input current
VI = 25V
Clamping diode forward volltage IF = 400mA
Clamping diode reverse current
VR = 50V
DC amplification factor
VCE = 4V, IC = 350mA, Ta = 25°C
typ*
—
1.2
1.0
1.2
9.5
1.4
—
2500
Unit
max
—
2.4
1.6
1.8
18
2.4
100
—
V
V
mA
V
µA
—
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* : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERISTICS
Symbol
ton
Parameter
Turn-on time
Turn-off time
toff
(Unless otherwise noted, Ta = 25°C)
Limits
Test conditions
CL = 15pF (note 1)
min
—
typ
10
max
—
—
120
—
Unit
ns
ns
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
INPUT
Vo
INPUT
50%
50%
Measured device
RL
OPEN
OUTPUT
PG
OUTPUT
50Ω
50%
50%
CL
ton
toff
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω
VP = 3.85VP-P
(2)Input-output conditions : RL = 25Ω, Vo = 10V
(3)Electrostatic capacity CL includes floating capacitance
at connections and input capacitance at probes
Feb.2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54523P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Collector Current Characteristics
Thermal Derating Factor Characteristics
M54523P
1.5
M54523FP
1.0
0.5
0
0
500
Collector current Ic (mA)
Collector current Ic (mA)
500
25
50
75
400
300
200
VI = 3.85V
Ta = 75°C
Ta = 25°C
Ta = –20°C
100
0
100
0
0.5
1.0
1.5
2.0
Ambient temperature Ta (°C)
Output saturation voltage VCE(sat) (V)
Duty Cycle-Collector Characteristics
(M54523P)
Duty Cycle-Collector Characteristics
(M54523P)
500
1
400
Collector current Ic (mA)
Power dissipation Pd (W)
2.0
400
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2
300
3
200
•The collector current values
represent the current per circuit.
•Repeated frequencyy ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
0
0
Collector current Ic (mA)
500
20
40
60
80
100
0
20
40
60
80
Duty Cycle-Collector Characteristics
(M54523FP)
Duty Cycle-Collector Characteristics
(M54523FP)
500
1
2
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
0
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
Duty cycle (%)
300
0
2
200
Duty cycle (%)
400
100
300
0
100
20
40
60
Duty cycle (%)
80
3
4
5
6
7
100
Collector current Ic (mA)
100
4
5
6
7
1
3
4
5
6
7
100
400
300
1
200
2
3
4
•The collector current values
represent the current per circuit.
5
•Repeated frequency ≥ 10Hz
76
•The value the circle represents the
value of the simultaneously-operated circuit. •Ta = 75°C
100
0
0
20
40
60
80
100
Duty cycle (%)
Feb.2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54523P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DC Amplification Factor
Collector Current Characteristics
Input Characteristics
104
DC amplification factor hFE
Input Current II (mA)
16
12
Ta = 75°C
Ta = 25°C
Ta = –20°C
8
4
0
0
8
16
24
VCE = 4V
Ta = 75°C
Ta = 25°C
Ta = –20°C
3
103
7
5
3
102 1
10
32
3
5 7 102
3
5 7 103
Input voltage VI (V)
Collector current IcC (mA)
Grounded Emitter Transfer Characteristics
Clamping Diode Characteristics
500
500
Forward bias current IF (mA)
Collector current Ic (mA)
7
5
400
Ta = 75°C
Ta = 25°C
Ta = –20°C
400
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VCE = 4V
Ta = 75°C
Ta = 25°C
Ta = –20°C
300
200
100
0
0
1
2
3
Input voltage VI (V)
4
5
300
200
100
0
0
0.5
1.0
1.5
2.0
Forward bias voltage VF (V)
Feb.2003