* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project
Download DTDG23YP
Thermal runaway wikipedia , lookup
Electrical ballast wikipedia , lookup
History of electric power transmission wikipedia , lookup
Electrical substation wikipedia , lookup
Variable-frequency drive wikipedia , lookup
Power inverter wikipedia , lookup
Power MOSFET wikipedia , lookup
Stray voltage wikipedia , lookup
Two-port network wikipedia , lookup
Semiconductor device wikipedia , lookup
Voltage optimisation wikipedia , lookup
Current source wikipedia , lookup
Alternating current wikipedia , lookup
Mains electricity wikipedia , lookup
Voltage regulator wikipedia , lookup
Surge protector wikipedia , lookup
Schmitt trigger wikipedia , lookup
Resistive opto-isolator wikipedia , lookup
Switched-mode power supply wikipedia , lookup
Buck converter wikipedia , lookup
DTDG23YP Transistors 1A / 60V Digital transistor (with built-in resistors and zener diode) DTDG23YP zExternal dimensions (Unit : mm) MPT3 4.5 1.6 1.5 2.5 4.0 zFeatures 1) High DC current gain. (Min. 300 at VO / IO=2V / 0.5A) 2) Low Vo(on). (Typ. 0.4V at IO / II=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L-load (an inductive load). 0.5 zApplications Inverter, Interface, Driver (2) (3) 1.0 (1) 0.5 0.4 zStructure NPN epitaxial planar silicon transistor (with built-in resistors and zener diode) 1.5 (1)Base (2)Collector (3)Emitter 0.4 0.4 1.5 3.0 Abbreviated symbol : E02 zPackaging specifications Part No. Package Packaging type Code Basic ordering unit (pieces) MPT3 Taping T100 1000 DTDG23YP zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Input voltage Symbol VCC VIN IC ICP Pd Tj Tstg Collector current Unit OUT V R1 IN A A W C C R2 GND IN OUT GND + + Power dissipation Junction temperature Storage temperature ∗1 Pw <− 10ms, Duty cycle <− 2% ∗2 When mounted on 40 40 0.7mm ceramic board. zEquivalent circuit Limits 60±10 −6 to +40 1 2 ∗1 1.5 ∗2 150 −55 to +150 R1=2.2kΩ R2=10kΩ zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Emitter-base resistance Symbol VI(off) VI(on) VO(on) II IO(off) GI fT ∗ R1 R2 Min. − 2 − − − 300 − 1.54 7 Typ. − − − − − − 80 2.2 10 Max. 0.3 − 0.4 3.6 0.5 − − 2.86 13 Unit V V mA µA − MHz kΩ kΩ Conditions VCC=5V , IO=100µA VO=0.4V , IO=100mA IO/II=500mA/5mA VI=5V VCC=40V , VI=0V VO=2V , IO=500mA VCE=5V , IE= −0.1A , f=30MHz − − ∗ Characteristics of built-in transistor Rev.B 1/2 DTDG23YP Transistors zElectrical characteristics curves 10m VO=0.4V 2m Ta= −40°C 25°C 125°C 1 0.5m 0.2m Ta=125°C 25°C −40°C 1m 500µ DC CURRENT GAIN : GI 10 2 VO=2V 5k 20 5 10k VCC=5V 5m 50 OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(on) (V) 100 200µ 100µ 50µ 20µ 10µ 5µ 2µ 0.1m 1m 2m 5m 10m 20m 50m 100m 200m 500m 1 OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) 1 1µ 0 2k 1k Ta=125°C 25°C −40°C 500 200 100 50 20 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) Fig.2 Output current vs. Input voltage (OFF characteristics) 10 1m 2m 5m 10m 20m 50m 100m200m 500m 1 OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. Output current IO / II=100/1 OUTPUT VOLTAGE : VO(on) (V) 500m Ta=125°C 25°C −40°C 200m 100m 50m 20m 10m 5m 2m 1m 1m 2m 5m 10m 20m 50m100m 200m 500m 1 OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. Output current Rev.B 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1