Download FM400TU-3A

MITSUBISHI <MOSFET MODULE>
FM400TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
FM400TU-3A
● ID(rms) .......................................................... 200A
● VDSS ............................................................. 150V
● Insulated
Type
● 6-elements in a pack
● Thermistor inside
● UL Recognized
File No.E323585
APPLICATION
AC motor control of forklift (battery power source), UPS
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
110
97 ±0.25
70.9
32
6.5
16
16
36
36
10
35 ±1.0
10
30
6.5
V
(SCREWING DEPTH)
4
25
B
P
U
90
14
20
32
CIRCUIT DIAGRAM
(8)GVP
(2)SVP
80
14
20
32
A
(7)GUP
(1)SUP
75
W
14
20
16.5
4
22.57
U
14
7-M6NUTS
3.96
9.2
5-6.5
38
6
(6)
12
3
(8.7)
67 ±0.25
9.1
13
1
14
4-φ6.5
MOUNTING HOLES
11.5
(6)
P
(15.8)
3 6.5
7
(14.5)
(14.5)
(6)
7
N
(17.5)
7
22.75
26 ＋1.0
−0.5
30
L A B E L
15.2
16.5
Tc measured point
Housing Type of A and B
(Tyco Electronics P/N:)
A: 917353-1
B: 179838-1
(9)GWP
(3)SWP
V
W
(10)GUN
(11)GVN
(12)GWN
(4)SUN
N
(5)SVN
(6)SWN
(13)
(14)
(1)SUP
(2)SVP
(3)SWP
(7)GUP
(8)GVP
(9)GWP (10)GUN (11)GVN (12)GWN
(13)TH1 (14)TH2
(4)SUN
(5)SVN
(6)SWN
A
B
Mar. 2013
MITSUBISHI <MOSFET MODULE>
FM400TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C unless otherwise specified.)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS*1
ISM*1
PD*4
PD*4
Tch
Tstg
Visol
Item
Drain-source voltage
Gate-source voltage
Drain current
Avalanche current
Source current
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Rating
150
±20
200
400
200
200
400
650
880
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
600
Conditions
G-S Short
D-S Short
TC’ = 112°C*3
Pulse*2
L = 10µH Pulse*2
Pulse*2
TC = 25°C
TC’ = 25°C*3
Main terminal to base plate, AC 1 min, f=60Hz, RMS
Main Terminal M6
Mounting to heat sink M6
Typical value
Unit
V
V
A
A
A
A
A
W
W
°C
°C
V
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified.)
Symbol
Item
IDSS
VGS(th)
IGSS
rDS(on)
(chip)
VDS(on)
(chip)
Drain cutoff current
Gate-source threshold voltage
Gate leakage current
Static drain-source
On-state resistance
Static drain-source
On-state voltage
RDD'-SS'
Internal lead resistance
Ciss
Coss
Crss
QG
td(on)
tr
td(off)
tf
trr*1
Qrr*1
VSD*1
Rth(j-c)
Rth(j-c’)
Rth(c-s)
Rth(c’-s’)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
Source-drain voltage
Thermal resistance
Contact thermal resistance
Conditions
VDS = VDSS, VGS = 0V
ID = 20mA, VDS = 10V
VGS = VGSS, VDS = 0V
ID = 200A
VGS = 15V
ID = 200A
VGS = 15V
ID = 200A
terminal-chip
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
VDS = 10V
VGS = 0V
VDD = 80V, ID = 200A, VGS = 15V
VDD = 80V, ID = 200A, VGS1 = VGS2 = 15V
RG = 6.3Ω, Inductive load switching operation
IS = 200A
IS = 200A, VGS = 0V
MOSFET part (1/6 module)*7
MOSFET part (1/6 module)*3
Case to fin, Thermal grease Applied*8 (1/6 module)
Case to fin, Thermal grease Applied*3, *8 (1/6 module)
Min.
—
4.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
6
—
2.6
4.8
0.52
0.96
0.8
1.12
—
—
—
1300
—
—
—
—
—
7.0
—
—
—
0.1
0.09
Max.
1
7.3
1.5
3.55
—
0.71
—
—
—
75
10
6
—
400
300
450
200
200
—
1.3
0.19
0.142
—
—
Min.
—
—
Limits
Typ.
100
4000
Max.
—
—
Unit
mA
V
µA
mΩ
V
mΩ
nF
nC
ns
ns
µC
V
K/W
NTC THERMISTOR PART
Symbol
R25*6
B*6
Parameter
Resistance
B Constant
Conditions
25°C*5
TTH =
Resistance at TTH = 25°C, 50°C*5
Unit
kΩ
K
*1: It is characteristics of the anti-parallel, source to drain free-wheel diode (FWDi).
*2: Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj max rating.
*3: TC’ measured point is just under the chips. If use this value, Rth(s-a) should be measured just under the chips.
*4: Pulse width and repetition rate should be such as to cause negligible temperature rise.
*5: TTH is thermistor temperature.
*6: B = (InR1-InR2)/(1/T1-1/T2) R1: Resistance at T1(K), R2: Resistance at T2(K)
*7: TC measured point is shown in page OUTLINE DRAWING.
*8: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
Mar. 2013
MITSUBISHI <MOSFET MODULE>
FM400TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
PERFORMANCE CURVES
TRANSFER CHARACTERISTICS
(TYPICAL)
Chip
OUTPUT CHARACTERISTICS
(TYPICAL)
Chip
350
DRAIN CURRENT ID (A)
400
VGS = 20V
VDS = 10V
12V
15V
10V
300
250
200
9V
150
100
DRAIN CURRENT ID (A)
400
300
Tj = 25°C
Tj = 125°C
200
100
50
Tj = 25°C
0
0
0.4
0.8
1.2
1.6
0
2.0
5
ID = 200A
6
VGS = 12V
5
VGS = 15V
3
2
1
20
40 60
80 100 120 140 160
GATE THRESHOLD VOLTAGE VGS(th) (V)
DRAIN-SOURCE
ON-STATE RESISTANCE rDS(on) (mΩ)
7
0
13
15
7
6
5
VDS = 10V
ID = 20mA
4
3
2
1
0
JUNCTION TEMPERATURE Tj (°C)
0
20
40 60
80 100 120 140 160
JUNCTION TEMPERATURE Tj (°C)
DRAIN-SOURCE ON-STATE
VOLTAGE VS. GATE BIAS
(TYPICAL)
Chip
102
3.0
Tj = 25°C
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
7
5
2.5
2.0
1.5
ID = 400A
1.0
ID = 200A
0.5
CAPACITANCE (nF)
DRAIN-SOURCE
ON-STATE VOLTAGE VDS(on) (V)
11
GATE THRESHOLD
VOLTAGE VS. TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE
VOLTAGE VS. TEMPERATURE
(TYPICAL)
Chip
0
9
GATE-SOURCE VOLTAGE VGS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
4
7
Ciss
3
2
101
7
5
3
Coss
2
VGS = 0V
0
ID = 100A
0
4
8
12
16
GATE-SOURCE VOLTAGE VGS (V)
20
Crss
100 –1
0
1
10 2 3 5 7 10 2 3 5 7 10 2 3 5 7 102
DRAIN-SOURCE VOLTAGE VDS (V)
Mar. 2013
MITSUBISHI <MOSFET MODULE>
FM400TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
GATE CHARGE CHARACTERISTICS
(TYPICAL)
16
VDD = 60V
12
VDD = 80V
8
4
0
103
ID = 200A
SOURCE CURRENT IS (A)
GATE-SOURCE VOLTAGE VGS (V)
20
Tj = 25°C
0.7
0.9
3
2
102
7
5
3
2
0.6
0.8
1.0
SOURCE-DRAIN VOLTAGE VSD (V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
104
7
5
2
tr
td(on)
102
tf
7
5
Conditions:
VDD = 80V
VGS = ±15V
RG = 6.3Ω
Tj = 125°C
Inductive load
3
2
101 1
10
101
2
3
5 7 102
2
3
td(off)
3
2
td(on)
tr
103
7
5
3
2
tf
Conditions:
VDD = 80V
VGS = ±15V
ID = 200A
Tj = 125°C
Inductive load
102
7
5
3
2
101
5 7 103
0
10
20
30
40
50
60
70
DRAIN CURRENT ID (A)
GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
7
5
3
2
Eoff
100
Eon
7
5
Err
3
2
Conditions:
VDD = 80V
VGS = ±15V
RG = 6.3Ω
Tj = 125°C
Inductive load
10–1
7
5
3
2
10–2 1
10
SWITCHING TIME (ns)
3 td(off)
2
3
5 7 102
2
3
DRAIN CURRENT ID (A)
5 7 103
102
SWITCHING ENERGY (mJ/pulse)
SWITCHING TIME (ns)
Tj = 125°C
GATE CHARGE QG (nC)
7
5
SWITCHING ENERGY (mJ/pulse)
VGS = 0V
7
5
101
0.5
0 200 400 600 800 1000 1200 1400 1600 1800
103
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
Chip
(TYPICAL)
7
5
3
2
101
7
5 Eoff
3
2
100
Eon
7
5
3
2
10–1 Conditions:
7
5 VDD = 80V
3 VGS = ±15V
2 ID = 200A
–2
10
0
10 20
Err
Tj = 125°C
Inductive load
30
40
50
60
70
GATE RESISTANCE RG (Ω)
Mar. 2013
MITSUBISHI <MOSFET MODULE>
FM400TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
100
Irr (A), trr (ns)
3
2
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(ch-c)
7
5
trr
Irr
102
7
5
3
2
Conditions:
VDD = 80V
VGS = ±15V
RG = 6.3Ω
Tj = 25°C
Inductive load
101
7
5
3
2
100 1
10
2
5 7 102
3
2
3
7
5
3
2
10–1
10–1
7
5
7
5
3
2
3
2
10–2
10–2
7
5
Single pulse
3
2 Tj = 25°C
Per unit base = Rth(j-c) = 0.19K/W
10–3
10–5 2 3 5 710–4 2 3 5 7 10–3
10–3
5 7 103
7
5
3
2
TIME (s)
SOURCE CURRENT IS (A)
CHIP LAYOUT
(110)
(97)
90.8
57.8
24.8
P
49.2
29.4
N
7
1
TrUP
13
TrVP
TrWP
TrVN
TrUN
12
(90)
(80)
(67)
14
TrWN
LABEL SIDE
6
U
V
W
25.4
58.4
91.4
The company name and product names herein are the trademarks and registered trademarks of the respective companies.
Mar. 2013
<MOSFET MODULES >
HIGH POWER SWITCHING
USE INSULATED TYPE
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March-2013