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FOR IMMEDIATE RELEASE
No. 2571
Product Inquiries
High Frequency Device Marketing Section
Mitsubishi Electric Corporation
Tel +81-3-3218-3014
[email protected]
http://www.mitsubishichips.com
Media Contact
Public Relations Division
Mitsubishi Electric Corporation
Tel: +81-3-3218-3380
[email protected]
http://www.MitsubishiElectric.com/news/
Mitsubishi Electric Announces Sale of InGaP-HBT
for Amplifiers in Satellite Digital Radios
Tokyo, December 9, 2010 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today it will
launch two new models of indium gallium phosphide (InGaP) - heterojunction bipolar transistors (HBT) for
reception systems in satellite digital radios. These products have a 4-pin full-mold package, and are best used
in the second or third stages of low noise amplifiers for L to C band (0.5~6GHz) applications. Shipments
will begin on February 7, 2011.
Satellite digital audio radio service (SDARS), common in North America since 2001, does not require tuning
to adapt to regional broadcasting like analog radio services. Car audio systems therefore use SDARS to
access traffic information, entertainment programs and other information services. Low noise amplifiers
used in the reception systems of these satellite digital radios are composed of two or three stages. The first
stage requires efficient low noise and high gain characteristics, and the second and third stages require high
gain and high power characteristics.
Mitsubishi Electric will begin shipment of a new series of
InGaP-HBTs including the MGF3021AM, which features
high gain characteristics, and the MGF3022AM, which has
high power characteristics. These amplifiers best operate in
combination with the MGF4921AM, Mitsubishi Electric’s
low noise gallium arsenide (GaAs) high electron mobility
transistor already available for the first stage of amplifying.
MGF3021AM (above)
MGF3022AM (below)
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Summary of Sale
Model
MGF3021AM
MGF3022AM
Features
High gain specification
Glp: 22dB
P1dB: 11dBm
(f=2.4GHz)
High output power specification
Glp: 18dB
P1dB: 16.5dBm
(f=2.4GHz)
Shipment date
Monthly production
50,000 pieces
Feb 7,2011
50,000 pieces
Product Features
1) InGaP-HBT with high gain, high power and high efficiency
- Lineup of high gain (MGF3021AM) and high power (MGF3022AM) InGaP-HBTs
- Features high efficiency with collector efficiency of 32% for MGF3021AM and 44% for MGF3022AM
at P1dB
- Single power supply operation, suitable for the second or third stages of low noise amplifiers
2) Industry standard 4-pin full-mold package
- Industry standard 4-pin full-mold package
- Unchanged foot pattern from the MGF4921AM, Mitsubishi Electric’s low noise amplifier suitable for
the first stage
Other Features
Recommended
bias condition
MAG
Glp
P1dB
OIP3
Model
Collector to emitter voltage
Collector current
Operation frequency
Maximum available power gain
Linear power gain
1dB gain compression point
3rd order intermodulation
distortion output intercept point
MGF3021AM
MGF3022AM
3V
3V
14mA
33mA
2.4GHz
23
19
22
18
11
16.5
24
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About Mitsubishi Electric
With over 85 years of experience in providing reliable, high-quality products to both corporate clients and
general consumers all over the world, Mitsubishi Electric Corporation (TOKYO: 6503) is a recognized
world leader in the manufacture, marketing and sales of electrical and electronic equipment used in
information processing and communications, space development and satellite communications, consumer
electronics, industrial technology, energy, transportation and building equipment. The company recorded
consolidated group sales of 3,353.2 billion yen (US$ 36.1 billion*) in the fiscal year ended March 31, 2010.
For more information visit http://www.MitsubishiElectric.com
*At an exchange rate of 93 yen to the US dollar, the rate given by the Tokyo Foreign Exchange Market on
March 31, 2010
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