Download SD2933

SD2933
HF/VHF/UHF RF power N-channel MOSFETs
Features
■
Gold metallization
■
Excellent thermal stability
■
Common source configuration
■
POUT = 300 W min. with 20 dB gain @ 30 MHz
■
Thermally enhanced packaging for lower
junction temperatures
M177 Epoxy sealed
Description
The SD2933 is a gold metallized N-channel
MOSFET field-effect RF power transistor. It is
intended for use in 50 Vdc large signal
applications up to 150 MHz. Its special low
thermal resistance package makes it ideal for ISM
applications where reliability and ruggedness are
critical factors.
Figure 1.
Pin connection
4
1
5
3
Table 1.
2
1. Drain
3. Gate
2. Source
4, 5. Source
Device summary
Order code
Marking
Base qty.
Package
Packaging(1)
SD2933
SD2933(1)
25 pcs
M177
Plastic tray
1. For more details please refer to Chapter 6: Marking, packing and shipping specifications..
November 2011
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Content
SD2933
Content
1
Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
Typical performance (30 MHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.1
Test circuit (30 MHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6
Marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 13
7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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SD2933
Electrical data
1
Electrical data
1.1
Maximum rating
TCASE = 25° C
Table 2.
Absolute maximum rating
Symbol
V(BR)DSS
VDGR
VGS
ID
PDISS
EAS
TJ
TSTG
1.2
Parameter
Value
Unit
Drain source voltage
125
V
Drain-gate voltage (RGS = 1MΩ)
125
V
Gate-source voltage
±20
V
Drain current
40
A
Power dissipation
648
W
Avalanche energy, single pulse (ID = 53 A, 800 µH
coil)
1100
mJ
Max. operating junction temperature
200
°C
-65 to +150
°C
Value
Unit
0.27
° C/W
Storage temperature
Thermal data
Table 3.
Symbol
RthJ-C
Thermal data
Parameter
Junction to case thermal resistance
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Electrical characteristics
2
SD2933
Electrical characteristics
TCASE = 25°C
Table 4.
Static
Symbol
Test conditions
Min.
125
Typ.
Max.
Unit
V(BR)DSS
VGS = 0 V
IDS = 200 mA
V
IDSS
VGS = 0 V
VDS = 50 V
100
µA
IGSS
VGS = 20 V
VDS = 0 V
500
nA
VGS(Q)
VDS = 10 V
ID = 250 mA
4
V
VDS(ON)
VGS = 10 V
ID = 20 A
3.0
V
GFS(1)
VDS = 10 V
ID = 10 A
CISS
VGS = 0 V
VDS = 50 V
COSS
VGS = 0 V
CRSS
VGS = 0 V
1.5
see Table 5: GFS sort
mho
f = 1 MHz
1000
pF
VDS = 50 V
f = 1 MHz
372
pF
VDS = 50 V
f = 1 MHz
29
pF
1. GFS sorted with alpha/numeric code marked on unit.
Table 5.
Table 6.
GFS sort
GFS sort
Value
A
10 to 10.99
B
11 to 11.99
C
12 to 12.99
D
13 to 13.99
E
14 to 14.99
F
15 to 15.99
G
16 to 16.99
H
17 to 18
Dynamic
Symbol
4/16
Test conditions
f = 30 MHz
Min.
Typ.
Max.
Unit
300
400
W
POUT
VDD = 50 V
IDQ = 250 mA
GPS
VDD = 50 V
IDQ = 250 mA POUT = 300 W f = 30 MHz
20
23.5
dB
ηD
VDD = 50 V
IDQ = 250 mA POUT = 150 W f = 30 MHz
50
65
%
VDD = 50 V IDQ = 250 mA POUT = 300 W f = 30 MHz
Load
mismatch all phase angles
3:1
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VSWR
SD2933
3
Impedance
Impedance
Figure 2.
Impedance data schematic
D
ZDL
Typical Drain
Load Impedance
Typical Input
Impedance
G
ZIN
S
Table 7.
Impedance data
f
ZIN (Ω)
ZDL (Ω)
30 MHz
1.8 - j 0.2
2.8 + j 2.3
108 MHz
1.9 + j 0.2
1.6 + j 1.4
175 MHz
1.9 + j 0.3
1.5 + j 1.6
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Typical performance (30 MHz)
SD2933
4
Typical performance (30 MHz)
Figure 3.
Capacitance vs. drain voltage
Figure 4.
10000
Drain current vs. gate voltage
15
Id, Drain Current (A)
Capacitance (pF)
f= 1 MHz
Ciss
1000
Coss
100
Crss
Vdd=10V
Tc = + 80oC
10
Tc = + 25oC
5
Tc = - 20oC
0
10
1
0
10
20
30
40
1.5
50
2
2.5
3
3.5
4
Vgs, Gate-Source Voltage (V)
Vds, Drain Source Voltage (V)
Gate-source voltage vs. case
temperature
Figure 6.
1.15
Maximum thermal resistance vs.
case temperature
0.33
1.1
0.32
Id= 12 A
Id= 10 A
1.05
Id= 7 A
Id= 5 A
Id= 15 A
1
0.95
RTH(j-c) (°C/W)
Vgs, GATE-SOURCE VOLTAGE (NORMALIZED)
Figure 5.
0.31
0.3
0.29
0.28
Id=.1 A
0.27
Id= 4 A
0.9
Id= 3 A
Vdd= 10 V
0.26
25
Id= 2 A
Id= 1 A
0.85
30
35
40
45
50
55
60
0.8
-25
0
25
50
75
100
Tc, CASE TEMPERATURE (ºC)
6/16
65
70
Tc, CASE TEMPERATURE (°C)
Id=.25 A
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75
80
85
SD2933
Typical performance (30 MHz)
Figure 7.
Transient thermal impedance
0.30
0.25
Zth , Deg C / W
0.20
0.15
0.10
0.05
0.00
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Time , Seconds
single pulse
10%
20%
30%
40%
50%
60%
70%
80%
90%
AM10216V1
Figure 8.
Transient thermal impedance model
PR C
PR C1
R =.083 Ohm
C =.0035904 F
I_DC
W atts
PR C
PR C2
R =.099 Ohm
C =.1182727 F
PR C
PR C3
R =.088 Ohm
C =2.4810922 F
AM10217V1
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Typical performance (30 MHz)
Figure 9.
SD2933
Output power vs. input power
Figure 10. Output power vs. input power (at
different temperatures)
500
Tc= 25°C
Vdd= 50 V
400
300
Pout, Output Power (W)
Pout, Output Power (W)
500
Vdd= 40 V
200
f= 30 MHz
Idq=250mA
100
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
Tc= 80°C
300
200
f= 30 MHz
Idq= 250 mA
Vdd= 50 V
100
0
0
Tc= -20°C
400
0
2.7
0
0.3
0.6
0.9
Pin, Input Power ( W )
1.2
1.5
1.8
2.1
2.4
2.7
Pin, Input Power (W)
Figure 11. Power gain vs. output power
Figure 12. Efficiency vs. output power
25
80
24
70
Efficiency (%)
Power Gain (dB)
26
23
22
21
19
50
f=30MHz
Vdd=50V
Idq=250mA
40
30
f= 30 MHz
Idq= 250 mA
Vdd= 50 V
20
60
20
0
100
200
300
400
Pout, Output Power (W)
18
0
100
200
300
400
Pout, Output Power (W)
Figure 13. Output power vs. supply voltage
Figure 14. Output power vs. gate voltage
500
450
F= 30 MHz
Vdd= 50 V
Idq= 250 mA
Pin= constant
f = 30 MHz
Idq = 250 mA
350
Pout, OUTPUT POWER (W)
Pout, Output Power (W)
400
Pin = 2.6 W
Pin = 1.3 W
300
250
200
Pin = 0.65 W
150
400
Tc= -20°C
Tc= +25°C
300
Tc= +80°C
200
100
100
24
26
28
30
32
34
36
38
40
42
Vdd, Supply Voltage (V)
44
46
48
50
0
-3
-2
-1
0
1
Vgs, GATE-SOURCE VOLTAGE (V)
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2
3
SD2933
4.1
Typical performance (30 MHz)
Test circuit (30 MHz)
Figure 15. 30 MHz test circuit schematic
Table 8.
Trasmission line dimensions
Dim.
Inch
mm
A
0.532
13.51
B
0.250
6.35
C
0.181
4.59
D
0.383
9.37
E
0.351
8.91
F
0.633
16.08
G
0.477
12.12
H
0.438
11.12
J
0.200
5.08
K
0.164
4.16
L
0.174
4.42
M
0.817
20.75
N
0.350
8.89
P
0.779
19.79
R
0.639
16.23
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Typical performance (30 MHz)
Table 8.
Table 9.
SD2933
Trasmission line dimensions (continued)
Dim.
Inch
mm
S
0.165
4.19
T
1.017
25.84
U
0.375
9.52
V
0.456
11.58
W
0.325
8.24
X
0.650
16.50
30 MHz test circuit component part list
Component
C1,C9
0.01 μF / 500 V surface mount ceramic chip capacitor
C2, C3
750 pF ATC 700B surface mount ceramic chip capacitor
C4
300 pF ATC 700B surface mount ceramic chip capacitor
C5,C10,C11,C14,C16
10000 pF ATC 200B surface mount ceramic chip capacitor
C6
510 pF ATC 700B surface mount ceramic chip capacitor
C7
300 pF ATC 700B surface mount ceramic chip capacitor
C8
175-680 pF type 46 standard trimmer capacitor
C12
47 μF / 63 V aluminum electrolytic radial lead capacitor
C13
1200 pF ATC 700B surface mount ceramic chip capacitor
C15
100 μF / 63 V aluminum electrolytic radial lead capacitor
R1,R3
1 K OHM 1 W surface mount chip resistor
R2
560 OHM 2 W wire-wound axils lead resistor
T1
HF 2-30 MHz surface mount 9:1 transformer
T2
RG - 142B/U 50 OHM coaxial cable OD = 0.165[4.18] L 15”[381.00]
covered with 15”[381.00] tinned copper tubular brand 13/65” [5.1] width
L1
1 3/4 turn air-wound 16 AWG ID = 0.219 [5.56] poly-coated magnet wire
L2
1 3/4 turn air-wound 12 AWG ID = 0.250 [6.34] bus bar wire
RFC1,RFC2
10/16
Description
3 turns 14 AWG wire through ferrite toroid
FB1
Surface mount EMI shield bead
FB2
Toroid
PCB
ULTRALAM 2000. 0.030” THK, εr = 2.55, 2 Oz ED CU both sides
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SD2933
Typical performance (30 MHz)
4 inches
Figure 16. 30 MHz test circuit photomaster
6.4 inches
Figure 17. 30 MHz test circuit
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Package mechanical data
5
SD2933
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Table 10.
M177 (0.550 dia 4/L N/HERM W/FLG) mechanical data
mm
Inch
Dim.
Min.
Max.
Min.
Typ.
Max.
A
5.72
5.97
0.225
0.235
B
6.73
6.96
0.265
0.275
C
21.84
22.10
0.860
0.870
D
28.70
28.96
1.130
1.140
E
13.84
14.10
0.545
0.555
F
0.08
0.18
0.003
G
2.49
2.74
0.098
0.108
H
3.81
4.32
0.150
0.170
I
12/16
Typ.
-
-
7.11
0.007
0.280
J
27.43
28.45
1.080
1.120
K
15.88
16.13
0.625
0.635
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SD2933
Package mechanical data
Figure 18. M177 package dimensions(a)
a. Controlling dimensions in inches.
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Marking, packing and shipping specifications
6
SD2933
Marking, packing and shipping specifications
Table 11.
Packing and shipping specifications
Order code
Packaging
Pcs per
tray
Dry pack
humidity
GFS code
Lot code
SD2933
Plastic tray
25
< 10 %
Not mixed
Not mixed
Figure 19. Marking layout
Table 12.
14/16
Marking specifications
Symbol
Description
X
GFS sort
CZ
Assembly plant
xxx
Last 3 digit of diffusion lot
VY
Diffusion plant
MAR
Country of origin
CZ
Test and finishing plant
y
Assembly year
yy
Assembly week
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SD2933
7
Revision history
Revision history
Table 13.
Document revision history
Date
Revision
30-Jul-2004
9
Changes
22-Sep-2011
10
Inserted Section 6: Marking, packing and shipping
specifications.
Updated EAS in Table 2: Absolute maximum rating.
Minor text changes to improve readability.
03-Oct-2011
11
Updated parameter ZIN in Table 7: Impedance data.
17-Nov-2011
12
Inserted Figure 7: Transient thermal impedance and Figure 8:
Transient thermal impedance model.
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SD2933
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