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MITSUBISHI INTELLIGENT POWER MODULES
PM50RSA120
FLAT-BASE TYPE
INSULATED PACKAGE
A
B
U
R
W
Q
U
AB
AD
12 3 4
5 6 7 8
9
11
13 15 17 19
10 12
14 16 18
F
Z - DIA. (4 TYP.)
P
AG
N
S
M
1. V UPC
2. UFO
3. U P
4. V UPI
5. V VPC
6. VFO
7. V P
8. V VPI
9. V WPC
10. WFO
AD (15 TYP.)
B
M
Y (4 TYP.)
AB
U
E
C
AA - THD (6 TYP.)
U
W
U
V
X
X
AG
K
J
J
11. W P
12. V WPI
13. V NC
14. V NI
15. B R
16. U N
17. V N
18. W N
19. FO
W
P
D
2.54 MM DIA. (2 TYP.)
0.5 MM SQ. PIN
(19 TYP.)
AE
T
V UPC
UP
U FO
V UPI
FO
V CC
OUT
IN
SI
VVPI
V CC
GND GND
OUT
V VPC
VP
VFO
FO
GND GND
IN
V WPI
V CC
OUT
SI
V WPC
WP
W FO
IN
FO
AC
SI
FO
V CC
OUT
IN
SI
GND GND
VN
FO
V CC
IN
V CC
V NI
VNC
WN
FO
IN
GND GND
V CC
FO
BR
FO
IN
UN
AF
V
GND GND
L
GND GND
N
GND GND
G H
Description:
Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to
20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel
diode power devices.
Features:
u Complete Output Power
Circuit
B
OUT
SI
OUT
SI
OUT
SI
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TEMP
N
W
V
U
u Gate Drive Circuit
u Protection Logic
P
– Short Circuit
– Over Current
– Over Temperature
– Under Voltage
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Inches
Millimeters
A
4.33±0.04
110.0±1.0
Dimensions
S
0.67
17.0
B
3.74±0.02
95.0±0.5
T
0.52
13.2
C
3.50±0.04
89.0±1.0
U
0.39
10.0
D
3.27
83.0
V
0.28
7.0
E
2.91±0.02
74.0±0.5
W
0.30
7.5
F
2.44
62.0
X
0.24
6.0
G
1.28
32.6
Y
0.24 Rad.
Rad. 6.0
H
1.24
31.6
Z
0.22 Dia.
Dia. 5.5
J
1.02
26.0
AA
Metric M5
M5
K
0.94
24.0
AB
0.127
Applications:
u Inverters
u UPS
u Motion/Servo Control
u Power Supplies
AC
0.10
2.6
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM50RSA120 is a 1200V,
50 Ampere Intelligent Power Module.
M
0.79
20.0
AD
0.08
2.0
Type
N
0.76
19.4
AE
0.07
1.8
P
0.75
19.0
AF
0.06
1.6
Q
0.708
17.98
AG
0.02±0.01
0.5±0.3
R
0.670
17.02
L
0.87 +0.06/-022.0 +1.5/-0.0
3.22
PM
Current Rating
Amperes
VCES
Volts (x 10)
50
120
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM50RSA120
FLAT-BASE TYPE
INSULATED PACKAGE
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Symbol
Ratings
Units
Tj
-20 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Case Operating Temperature
TC
-20 to 100
°C
Mounting Torque, M5 Mounting Screws
—
1.47 ~ 1.96
N·m
Mounting Torque, M5 Main Terminal Screw
—
1.47 ~ 1.96
N·m
Power Device Junction Temperature
Module Weight (Typical)
—
550
Grams
VCC(prot.)
800
Volts
VRMS
2500
Volts
VD
20
Volts
Input Voltage (Applied between U P-VUPC , VP-VVPC, WP-VWPC, UN · VN · WN · Br-VNC)
VCIN
20
Volts
Fault Output Supply Voltage Applied between (UFO-V UPC, VFO-VVPC, WFO-VWPC, FO-VNC)
VFO
20
Volts
Fault Output Current (Sink Current at UFO, VFO, WFO and FO Terminal)
IFO
20
mA
VCES
1200
Volts
IC
50
Amperes
Peak Collector Current, (TC = 25°C)
ICP
100
Amperes
Supply Voltage (Applied between P - N)
VCC
900
Volts
VCC(surge)
1000
Volts
PC
347
Watts
VCES
1200
Volts
IC
15
Amperes
ICP
30
Amperes
Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part, Tj = 125°C)
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Control Sector
Supply Voltage (Applied between VUP1-VUPC, VVP1-VVPC, VWP1 -VWPC, VN1-VNC)
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V)
Collector Current, (TC = 25°C)
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Supply Voltage, Surge (Applied between P - N)
Collector Dissipation
Brake Sector
Collector-Emitter Voltage
Collector Current, (TC = 25°C)
Peak Collector Current, (TC = 25°C)
Supply Voltage (Applied between P - N)
VCC
900
Volts
VCC(surge)
1000
Volts
Collector Dissipation
PC
138
Watts
Diode Forward Current
IF
15
Amperes
VR(DC)
1200
Volts
Supply Voltage, Surge (Applied between P - N)
Diode DC Reverse Voltage
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM50RSA120
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
OC
-20°C ≤ T ≤ 125°C, VD = 15V
59
112
—
Amperes
22
50
—
Amperes
SC
-20°C ≤ T ≤ 125°C, VD = 15V
—
183
—
Amperes
—
95
—
Amperes
t off(OC)
VD = 15V
—
10
—
µs
OT
Trip Level
111
118
125
°C
OTr
Reset Level
—
100
—
°C
UV
Trip Level
11.5
12.0
12.5
Volts
UV r
Reset Level
—
12.5
—
Volts
Applied between VUP1-VUPC,
13.5
15
16.5
Volts
Control Sector
Over Current Trip Level Inverter Part
Over Current Trip Level Brake Part
Short Circuit Trip Level Inverter Part
Short Circuit Trip Level Brake Part
Over Current Delay Time
Over Temperature Protection
Supply Circuit Under Voltage Protection
Supply Voltage
VD
VVP1-VVPC, VWP1-VWPC, VN1-VNC
Circuit Current
ID
VD = 15V, VCIN = 15V, VN1-VNC
—
44
60
mA
VD = 15V, VCIN = 15V, VXP1-VXPC
—
13
18
mA
Input ON Threshold Voltage
Vth(on)
Applied between
1.2
1.5
1.8
Volts
Input OFF Threshold Voltage
Vth(off)
UP-VUPC , VP-VVPC, WP-VWPC,
1.7
2.0
2.3
Volts
UN · VN · WN · Br-VNC
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PWM Input Frequency
f PWM
3-φ Sinusoidal
—
Fault Output Current
IFO(H)
VD = 15V, VFO = 15V
IFO(L)
VD = 15V, VFO = 15V
tFO
VD = 15V
Minimum Fault Output Pulse Width
15
20
kHz
—
—
0.01
mA
—
10
15
mA
1.0
1.8
—
ms
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM50RSA120
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector Cutoff Current
ICES
VCE = VCES, Tj = 25°C
—
—
1.0
mA
VCE = VCES, Tj = 125°C
—
—
10
mA
Emitter-Collector Voltage
VEC
-IC = 50A, VD = 15V, VCIN = 5V
—
2.5
3.5
Volts
VD = 15V, VCIN = 0V, I C = 50A
—
2.5
3.5
Volts
VD = 15V, VCIN = 0V, I C = 50A,
—
2.2
3.2
Volts
0.5
1.0
2.5
µs
IGBT Inverter Sector
Collector-Emitter Saturation Voltage
VCE(sat)
Tj = 125°C
Inductive Load Switching Times
ton
trr
VD = 15V, VCIN = 0 ↔ 15V
—
0.15
0.3
µs
tC(on)
VCC = 600V, I C = 50A
—
0.4
1.0
µs
toff
Tj = 125°C
—
2.0
3.0
µs
—
0.7
1.2
µs
—
2.8
3.8
Volts
—
2.2
3.2
Volts
tC(off)
Brake Sector
Collector-Emitter Saturation Voltage
VCE(sat)
VD = 15V, VCIN = 0V, I C = 15A,
Tj = 25°C
VD = 15V, VCIN = 0V, I C = 15A,
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Tj = 125°C
Diode Forward Voltage
VFM
Collector Cutoff Current
ICES
-IC = 15A, VD = 15V, VCIN = 5V
—
2.5
3.5
Volts
VCE = VCES, Tj = 25°C
—
VCE = VCES, Tj = 125°C
—
—
1
mA
—
10
mA
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM50RSA120
FLAT-BASE TYPE
INSULATED PACKAGE
Thermal Characteristics
Characteristic
Symbol
Condition
Min.
Typ.
Max.
Units
Junction to Case Thermal Resistance
Rth(j-c)Q
Each Inverter IGBT
—
—
0.36
°C/Watt
Rth(j-c)F
Each Inverter FWDi
—
—
1.0
°C/Watt
Rth(c-f)Q
Each Brake IGBT
—
—
0.9
°C/Watt
Rth(c-f)F
Each Brake FWDi
—
—
2.0
°C/Watt
Rth(c-f)
Case to Fin Per Module,
—
—
0.027 °C/Watt
Contact Thermal Resistance
Thermal Grease Applied
Recommended Conditions for Use
Characteristic
Symbol
Condition
Value
Units
Supply Voltage
VCC
Applied across P-N Terminals
0 ~ 800
Volts
Applied between VUP1-VUPC,
15 ± 1.5
Volts
VD
VN1-VNC, VVP1-VVPC, VWP1-VWPC
Input ON Voltage
VCIN(on)
Input OFF Voltage
VCIN(off)
PWM Input Frequency
f PWM
Minimum Dead Time
tdead
Applied between
UP-VUPC , VP-VVPC, W P-VWPC, UN · VN · WN · Br-VNC
Using Application Circuit
Input Signal
0 ~ 0.8
Volts
4.0 ~ VD
Volts
5 ~ 20
kHz
≥3
µs
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Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM50RSA120
FLAT-BASE TYPE
INSULATED PACKAGE
Inverter Part
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
3
1
0
1
IC = 50A
VCIN = 0V
Tj = 25oC
Tj = 125oC
0
0
10
20
30
40
50
15
VD = 17V
13
40
20
0
0
12
14
16
18
20
22
0
1
2
3
COLLECTOR CURRENT, IC, (AMPERES)
SUPPLY VOLTAGE, VD, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS OF
FREE-WHEEL DIODE (TYPICAL)
101
101
VCC = 600V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
100
VCC = 600V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
102
VCC = 600V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
tc(off)
tc(on)
10-1
100
101
t(off)
100
t(on)
10-1
100
102
REVERSE RECOVERY CURRENT, trr, (µs)
100
SWITCHING TIMES, ton, toff, (µs)
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101
101
100
101
102
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
DIODE FORWARD CHARACTERISTICS
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
OVER CURRENT TRIP LEVEL VS.
TEMPERATURE (TYPICAL)
102
120
120
Tj = 25oC
VD = 15V
VCIN = 15V
Tj = 25oC
Tj = 125oC
101
100
OVER CURRENT TRIP LEVEL
(WHEN Tj = 25oC IS 100%)
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
trr
10-1
10-2
100
102
Irr
COLLECTOR CURRENT, IC, (AMPERES)
OVER CURRENT TRIP LEVEL
(WHEN VD = 15IS 100%)
SWITCHING TIMES, tc(on), tc(off), (µs)
2
Tj = 25oC
VCIN = 0V
80
60
100
80
60
40
40
0
0
VD = 15V
100
0
0.5
1.0
1.5
2.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
2.5
0
12
14
16
18
SUPPLY VOLTAGE, VD, (VOLTS)
20
-50
0
50
100
150
JUNCTION TEMPERATURE, Tj, (oC)
Sep.2000
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
2
60
COLLECTOR CURRENT, IC, (AMPERES)
VD = 15V
VCIN = 0V
Tj = 25oC
Tj = 125oC
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
SATURATION VOLTAGE VCE(sat), (VOLTS)
3
OUTPUT CHARACTERISTICS
(TYPICAL)
MITSUBISHI INTELLIGENT POWER MODULES
PM50RSA120
FLAT-BASE TYPE
INSULATED PACKAGE
Inverter Part
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
15
SUPPLY CURRENT UNDER VOLTAGE,
UVt, UVr, (VOLTS)
120
FAULT OUTPUT PULSE WIDTH, tFO (mS)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
CONTROL SUPPLY VOLTAGE DROP
PROTECTION VS. TEMPERATURE
(TYPICAL)
FAULT OUTPUT PULSE WIDTH VS.
TEMPERATURE (TYPICAL)
100
80
60
40
UVr
UVt
14
13
12
11
VD = 15V
0
10
-50
0
50
100
150
-50
0
50
100
JUNCTION TEMPERATURE, Tj, (oC)
JUNCTION TEMPERATURE, Tj, (oC)
150
101
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 0.36oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
101
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100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 1.0oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM50RSA120
FLAT-BASE TYPE
INSULATED PACKAGE
Brake Part
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
4
3
2
1
0
16
3
2
IC = 15A
VCIN = 0V
Tj = 25oC
Tj = 125oC
1
0
4
8
12
16
20
Tj = 25oC
VCIN = 0V
COLLECTOR CURRENT, IC, (AMPERES)
12
8
4
12
14
16
18
20
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
DIODE FORWARD CHARACTERISTICS
(TYPICAL)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
15
13
SUPPLY VOLTAGE, VD, (VOLTS)
102
VD = 17V
0
0
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
0
DIODE FORWARD CURRENT, IF, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
VD = 15V
VCIN = 0V
Tj = 25oC
Tj = 125oC
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
SATURATION VOLTAGE VCE(sat), (VOLTS)
4
OUTPUT CHARACTERISTICS
(TYPICAL)
101
101
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VD = 15V
VCIN = 15V
Tj = 25oC
Tj = 125oC
101
100
0
0.4
0.8
1.2
1.6
DIODE FORWARD VOLTAGE, VF, (VOLTS)
2.0
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 0.9oC/W
10-3
10-3
10-2
10-1
TIME, (s)
100
101
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 2.0oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
Sep.2000