Download PM25RSB120

MITSUBISHI INTELLIGENT POWER MODULES
PM25RSB120
FLAT-BASE TYPE
INSULATED PACKAGE
A
B
M
S
AD
S
P
S
N
12 3 4
AA
5678
9 11
P
J
10 12
14 16 18
C
D
AB (15 TYP.)
B
K
N
U
U
AD
V
W
Z
E
H
H
W - DIA.
(4 TYP.)
G
T - DIA.
(4 TYP.)
11. WP
12. V WPI
13. V NC
14. V NI
15. B R
16. U N
17. V N
18. WN
19. FO
1. V UPC
2. UF O
3. U P
4. V UPI
5. V VPC
6. VFO
7. V P
8. V VPI
9. V WPC
10. WFO
13 15 17 19
Description:
Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20
kHz. Built-in control circuits provide
optimum gate drive and protection
for the IGBT and free-wheel diode
power devices.
0.5 MM SQ. PIN (19 TYP.)
.250 TAB (6 TYP.)
V
X
Q
L
F
AC
Y
R
U FO
V UPI
VUPC
UP
V VPC
VP
V FO
V VPI
V WPI
V WPC
WP
W FO
UN
VN
VNI
FO
BR
VNC
WN
V
Features:
u Complete Output Power
Circuit
FO
V CC
OUT
IN
SI
V CC
OUT
GND GND
FO
IN
SI
V CC
OUT
GND GND
FO
IN
SI
GND GND
FO
V CC
OUT
IN
SI
GND GND
FO
IN
V CC
OUT
TEMP
SI
V CC
GND GND
OUT
IN
FO
SI
V CC
GND GND
OUT
FO
IN
SI
GND GND
www.BDTIC.com/MITSUBISHI
u Gate Drive Circuit
B
N
W
V
U
u Protection Logic
– Short Circuit
– Over Current
– Over Temperature
– Under Voltage
P
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
A
3.96 ± 0.04
100.5 ± 1.0
B
3.48 ± 0.02
88.5 ± 0.5
Q
0.41
10.5
R
0.39
10.0
C
2.76 ± 0.04
70.0 ± 1.0
S
D
2.30 ± 0.02
58.5 ± 0.5
T
0.39 Dia.
E
1.191 ± 0.02
30.25 ± 0.5
U
0.364
9.25
F
0.83
21.0
V
0.24
6.0
G
0.75
19.0
W
0.18 Dia.
Dia. 4.5
H
0.73
18.5
X
0.16
4.0
0.394 ± 0.010 10.00 ± 0.25
Dia. 10.0
J
0.71
18.0
Y
0.12
3.0
K
0.69
17.5
Z
0.88 ± 0.02
2.25 ± 0.5
L
0.67
17.0
AA
0.086 ± 0.02
2.18 ± 0.5
M
0.581
14.76
AB
0.079 ± 0.010
2.00 ± 0.25
N
0.541
13.75
AC
0.06
1.5
P
0.541
13.74
AD
0.01 ± 0.02
0.25 ± 0.5
Applications:
u Inverters
u UPS
u Motion/Servo Control
u Power Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM25RSB120 is a 1200V,
25 Ampere Intelligent Power Module.
Type
PM
Current Rating
Amperes
VCES
Volts (x 10)
25
120
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM25RSB120
FLAT-BASE TYPE
INSULATED PACKAGE
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Power Device Junction Temperature
Symbol
Ratings
Units
Tj
-20 to 150
°C
Tstg
-40 to 125
°C
Case Operating Temperature
TC
-20 to 100
°C
Mounting Torque, M4 Mounting Screws
—
0.98 ~ 1.47
N·m
Module Weight (Typical)
—
330
Grams
Storage Temperature
Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part, Tj = 125°C)
VCC(prot.)
800
Volts
Viso
2500
Vrms
VD
20
Volts
Input Voltage (Applied between U P-VUPC, VP-VVPC, WP-VWPC, UN · VN · WN · Br-VNC)
VCIN
20
Volts
Fault Output Supply Voltage Applied between (UFO-VUPC , VFO-VVPC, WFO-V WPC, FO-VNC)
VFO
20
Volts
Fault Output Current (Sink Current at UFO, VFO, W FO and F O Terminal)
IFO
20
mA
VCES
1200
Volts
IC
25
Amperes
ICP
50
Amperes
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Control Sector
Supply Voltage (Applied between VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC)
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V)
Collector Current, (TC = 25°C)
Peak Collector Current, (TC = 25°C)
www.BDTIC.com/MITSUBISHI
Supply Voltage (Applied between P - N)
Supply Voltage, Surge (Applied between P - N)
Collector Dissipation
VCC
900
Volts
VCC(surge)
1000
Volts
PC
132
Watts
VCES
1200
Volts
IC
10
Amperes
Brake Sector
Collector-Emitter Voltage
Collector Current, (TC = 25°C)
Peak Collector Current, (TC = 25°C)
ICP
20
Amperes
Supply Voltage (Applied between P - N)
VCC
900
Volts
VCC(surge)
1000
Volts
PC
62
Watts
IF
10
Amperes
VR(DC)
1200
Volts
Supply Voltage, Surge (Applied between P - N)
Collector Dissipation
Diode Forward Current
Diode DC Reverse Voltage
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM25RSB120
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
OC
-20°C ≤ T ≤ 125°C, VD = 15V
Min.
Typ.
Max.
Units
Control Sector
Over Current Trip Level Inverter Part
Over Current Trip Level Brake Part
Short Circuit Trip Level Inverter Part
SC
-20°C ≤ T ≤ 125°C, VD = 15V
Short Circuit Trip Level Brake Part
Over Current Delay Time
Over Temperature Protection
Supply Circuit Under Voltage Protection
32
62
—
Amperes
15
30
—
Amperes
—
101
—
Amperes
—
41
—
Amperes
t off(OC)
VD = 15V
—
10
—
µs
OT
Trip Level
111
118
125
°C
OTr
Reset Level
—
100
—
°C
UV
Trip Level
11.5
12.0
12.5
Volts
UV r
Reset Level
—
12.5
—
Volts
Supply Voltage
VD
Applied between VUP1-VUPC,
13.5
15
16.5
Volts
Circuit Current
ID
—
44
60
mA
VVP1-VVPC, VWP1-VWPC, VN1-VNC
VD = 15V, VCIN = 15V, VN1-VNC
VD = 15V, VCIN = 15V, VXP1-VXPC
—
13
18
mA
Input ON Threshold Voltage
Vth(on)
Applied between
1.2
1.5
1.8
Volts
Input OFF Threshold Voltage
Vth(off)
UP-VUPC , VP-VVPC, WP-VWPC,
1.7
2.0
2.3
Volts
UN · VN · WN · Br-VNC
www.BDTIC.com/MITSUBISHI
PWM Input Frequency
f PWM
3-φ Sinusoidal
—
Fault Output Current
IFO(H)
VD = 15V, VFO = 15V
IFO(L)
VD = 15V, VFO = 15V
tFO
VD = 15V
Minimum Fault Output Pulse Width
15
20
kHz
—
—
0.01
mA
—
10
15
mA
1.0
1.8
—
ms
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM25RSB120
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
VCE = VCES, Tj = 25°C
—
—
1.0
mA
VCE = VCES, Tj = 125°C
—
—
10
mA
IGBT Inverter Sector
Collector Cutoff Current
Emitter-Collector Voltage
Collector-Emitter Saturation Voltage
ICES
VEC
-IC = 25A, VD = 15V, VCIN = 5V
—
2.5
3.5
Volts
VCE(sat)
VD = 15V, VCIN = 0V, I C = 25A
—
2.5
3.5
Volts
VD = 15V, VCIN = 0V, I C = 25A,
—
2.2
3.2
Volts
Tj = 125°C
Inductive Load Switching Times
0.5
1.0
2.5
µs
trr
VD = 15V, VCIN = 0 ↔ 15V
—
0.15
0.3
µs
tC(on)
VCC = 600V, I C = 25A
—
0.4
1.0
µs
toff
Tj = 125°C
—
2.0
3.0
µs
—
0.7
1.2
µs
—
2.8
3.8
Volts
—
2.5
3.5
Volts
ton
tC(off)
Brake Sector
Collector-Emitter Saturation Voltage
VCE(sat)
VD = 15V, VCIN = 0V, I C = 10A,
Tj = 25°C
VD = 15V, VCIN = 0V, I C = 10A,
www.BDTIC.com/MITSUBISHI
Tj = 125°C
Diode Forward Voltage
VFM
Collector Cutoff Current
ICES
-IC = 10A, VD = 15V, VCIN = 5V
—
2.5
3.5
Volts
VCE = VCES, Tj = 25°C
—
VCE = VCES, Tj = 125°C
—
—
1
mA
—
10
mA
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM25RSB120
FLAT-BASE TYPE
INSULATED PACKAGE
Thermal Characteristics
Characteristic
Symbol
Condition
Min.
Typ.
Max.
Units
Junction to Case Thermal Resistance
Rth(j-c)Q
Each Inverter IGBT
—
—
0.95
°C/Watt
Rth(j-c)F
Each Inverter FWDi
—
—
2.5
°C/Watt
Rth(c-f)Q
Each Brake IGBT
—
—
2.0
°C/Watt
Rth(c-f)F
Each Brake FWDi
—
—
2.5
°C/Watt
Rth(c-f)
Case to Fin Per Module,
—
—
0.036 °C/Watt
Contact Thermal Resistance
Thermal Grease Applied
Recommended Conditions for Use
Characteristic
Symbol
Condition
Value
Units
Supply Voltage
VCC
Applied across P-N Terminals
0 ~ 800
Volts
Applied between VUP1-VUPC,
15 ± 1.5
Volts
VD
VN1-VNC, VVP1-VVPC, VWP1-VWPC
Input ON Voltage
VCIN(on)
Applied between
0 ~ 0.8
Volts
Input OFF Voltage
VCIN(off)
UP, VP, WP, UN , VN , WN, Br
4.0 ~ VD
Volts
PWM Input Frequency
f PWM
Using Application Circuit
5 ~ 20
kHz
Minimum Dead Time
tdead
Input Signal
≥ 2.5
µs
www.BDTIC.com/MITSUBISHI
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM25RSB120
FLAT-BASE TYPE
INSULATED PACKAGE
Inverter Part
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
3.0
2.0
1.5
1.0
0.5
0
2.5
2.0
1.5
1.0
IC = 25A
VCIN = 0V
Tj = 25oC
Tj = 125oC
0.5
0
0
10
20
30
15
VD = 17V
13
20
15
10
5
0
0
12
14
16
18
20
0
0.5
1.0
1.5
2.0
2.5
3.0
COLLECTOR CURRENT, IC, (AMPERES)
SUPPLY VOLTAGE, VD, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
REVERSE RECOVERY CURRENT VS.
EMITTER CURRENT (TYPICAL)
101
101
101
VCC = 600V
VD = 15V
102
VCC = 600V
VD = 15V
VCC = 600V
VD = 15V
SWITCHING TIMES, tc(on), tc(off), (µs)
Tj = 25oC
Tj = 125oC
toff
100
ton
10-1
100
101
Inductive Load
Tj = 25oC
Tj = 125oC
100
tc(off)
tc(on)
10-1
100
102
REVERSE RECOVERY TIME, trr, (µs)
www.BDTIC.com/MITSUBISHI
Inductive Load
101
101
10-1
100
trr
10-1
102
101
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
DIODE FORWARD CHARACTERISTICS
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
OVER CURRENT TRIP LEVEL VS.
TEMPERATURE (TYPICAL)
101
140
Tj = 25oC
OVER CURRENT TRIP LEVEL % (NORMALIZED)
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
Irr
100
COLLECTOR CURRENT, IC, (AMPERES)
VD = 15V
VCIN = 15V
Tj = 25oC
Tj = 125oC
120
100
80
60
0
100
0.4
Tj = 25oC
Tj = 125oC
10-2
100
102
140
102
Inductive Load
COLLECTOR CURRENT, IC, (AMPERES)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
SWITCHING TIMES, ton, toff, (µs)
Tj = 25oC
VCIN = 0V
25
0.8
1.2
1.6
2.0
2.4
2.8
EMITTEER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
2.5
30
COLLECTOR CURRENT, IC, (AMPERES)
VD = 15V
VCIN = 0V
Tj = 25oC
Tj = 125oC
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
SATURATION VOLTAGE VCE(sat), (VOLTS)
3.0
OUTPUT CHARACTERISTICS
(TYPICAL)
VD = 15V
120
100
80
60
0
0
12
14
16
18
SUPPLY VOLTAGE, VD, (VOLTS)
20
-50
0
50
100
150
JUNCTION TEMPERATURE, Tj, (oC)
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM25RSB120
FLAT-BASE TYPE
INSULATED PACKAGE
Inverter Part
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
15
VD = 15V
UVt
UVr
120
14
UV TRIP-RESET LEVEL,
UVt, UVr, (VOLTS)
FAULT OUTPUT PULSE WIDTH % (NORMALIZED)
140
100
80
60
13
12
11
0
0
-50
0
50
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
CONTROL SUPPLY VOLTAGE TRIP-RESET
LEVEL TEMPERATURE DEPENDENCY
(TYPICAL)
FAULT OUTPUT PULSE WIDTH VS.
TEMPERATURE (TYPICAL)
150
-50
0
50
100
JUNCTION TEMPERATURE, TJ, (oC)
JUNCTION TEMPERATURE, Tj, (oC)
150
101
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 0.95oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
101
www.BDTIC.com/MITSUBISHI
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Fth(j-c)F = 2.5oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM25RSB120
FLAT-BASE TYPE
INSULATED PACKAGE
Brake Part
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
3.5
2.5
2.0
1.5
1.0
VD = 15V
VCIN = 0V
Tj = 25oC
Tj = 125oC
0
3.0
2.5
2.0
1.5
1.0
0.5
Tj = 25oC
IC = 10A
0
0
5
10
0
16
18
15
10
VD = 17V
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
13
5
0
20
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
DIODE FORWARD CHARACTERISTICS
DIODE FORWARD CURRENT, IF, (AMPERES)
14
Tj = 25oC
VCIN = 0V
SUPPLY VOLTAGE, VD, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
102
12
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
0.5
15
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
SATURATION VOLTAGE VCE(sat), (VOLTS)
3.0
OUTPUT CHARACTERISTICS
(TYPICAL)
101
101
www.BDTIC.com/MITSUBISHI
VD = 15V
VCIN = 15V
Tj = 25oC
Tj = 125oC
101
100
0
0.4
0.8
1.2
1.6
DIODE FORWARD VOLTAGE, VF, (VOLTS)
2.0
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 2.0oC/W
10-3
10-3
10-2
10-1
TIME, (s)
100
101
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Fth(j-c)D = 2.5oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
Sep.2000