Download MGF1451A 数据资料DataSheet下载

< Power GaAs FET >
MGF1451A
Micro-X ceramic package
DESCRIPTION
The MGF1451A power GaAs MES FETis designed for use in S to Ku
band amplifiers.
Outline Drawing
FEATURES
High gain and High P1dB
Glp=10.5dB , P1dB=13dBm (Typ.)
@ f=12GHz
APPLICATION
Fig.1
S to Ku band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=3V, ID=30mA
RoHS COMPLIANT
MGF1451A is a RoHS compliant product. RoHS compliance is
indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
Ratings
Unit
Gate to drain voltage
-8
V
MITSUBISHI Proprietary
VGSO
Gate to source voltage
-8
V
120
mA
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
ID
PT
Tch
Tstg
Parameter
(Ta=25°C )
Drain current
Total power dissipation
300
mW
Channel temperature
175
°C
Storage temperature
-55 to +125
°C
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
(Ta=25°C)
Test conditions
Limits
Unit
MIN.
TYP.
MAX
V(BR)GDO
Gate to drain breakdown voltage
IG=-30µA
-8
--
--
V
V(BR)GSO
Gate to source breakdown voltage
IG=-30µA
-8
--
--
V
IGSS
Gate to source leakage current
VGS=-3V,VDS=0V
--
--
10
µA
IDSS
Saturated drain current
VGS=0V,VDS=3V
35
60
120
mA
Gate to source cut-off voltage
VDS=3V,ID=300µA
-0.3
-1.4
-3.5
V
Linear power gain
VDS=3V,
9.0
10.5
--
dB
Output power at 1dB gain
compression
ID=30mA, f=12GHz
11.0
13.0
--
dB
--
--
--
420
℃/W
VGS(off)
Glp
P1dB.
Rt
Thermal resistance
Publication Date : Apr., 2011
1
< Power GaAs FET >
MGF1451A
Micro-X ceramic package
TYPICAL CHARACTERISTICS
ID vs. VDS
80
Ta=25℃
VDS=3V
70
DRAIN CURRENT ID(mA)
VGS=0V
60
50
40
30
20
10
0
60
50
40
30
20
10
0
0
1
2
3
4
5
DRAIN TO SOURCE VOLTAGE VDS(V)
-2.0
Pout,Glp vs. Pin
25
30
20
25
15
20
10
15
5
10
0
-10.0
-5.0
0.0
Pin(dBm)
5.0
Glp(dB)
f=12GHz
VDS=3V
IDS=30mA
Pout
Glp
Pout(dBm)
ID VS. VDS
80
Ta=25℃
VGS=-0.2V/STEP
70
DRAIN CURRENT ID(mA)
(Ta=25°C)
5
10.0
Publication Date : Apr., 2011
2
-1.0
0.0
GATE TO SOURCE VOLTAGE VGS(V)
< Power GaAs FET >
MGF1451A
Micro-X ceramic package
S PARAMETERS
(Conditions:VDS=3V,IDS=30mA,Ta=25deg.C)
freq
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
S11
Mag.
0.986
0.953
0.921
0.886
0.850
0.810
0.784
0.748
0.714
0.667
0.606
0.521
0.447
0.386
0.382
0.460
0.578
0.688
0.767
0.794
S21
Angle
-21.3
-41.0
-58.6
-74.3
-90.2
-101.0
-111.5
-121.3
-131.5
-143.9
-157.3
-173.0
165.7
134.3
95.5
57.9
29.8
8.2
-8.0
-20.5
Mag.
4.089
3.848
3.570
3.274
3.054
2.823
2.686
2.588
2.542
2.541
2.562
2.586
2.653
2.686
2.674
2.619
2.445
2.224
1.979
1.736
S12
Angle
159.6
140.9
124.1
109.1
93.5
80.9
68.9
57.3
45.4
33.2
19.6
5.6
-9.6
-26.7
-45.2
-65.5
-86.0
-106.6
-126.1
-145.0
Mag.
0.016
0.029
0.039
0.046
0.052
0.054
0.055
0.055
0.057
0.062
0.067
0.069
0.073
0.076
0.078
0.080
0.080
0.077
0.075
0.077
S22
Angle
75.2
61.4
50.8
41.7
31.2
24.8
19.3
15.5
13.5
11.2
4.4
-4.9
-13.3
-23.5
-37.5
-54.5
-73.9
-95.0
-117.1
-140.2
Mag.
0.542
0.544
0.542
0.539
0.528
0.531
0.541
0.547
0.552
0.560
0.556
0.544
0.526
0.496
0.451
0.379
0.282
0.169
0.060
0.083
K
Angle
-15.9
-31.0
-43.3
-52.9
-64.5
-72.5
-79.2
-85.4
-91.2
-96.6
-103.4
-109.9
-117.9
-125.7
-135.0
-144.3
-154.0
-157.6
-138.7
-42.8
0.17
0.30
0.40
0.51
0.64
0.82
0.93
1.08
1.17
1.18
1.27
1.46
1.52
1.58
1.60
1.57
1.54
1.51
1.46
1.48
MSG/MAG
(dB)
24.1
21.2
19.6
18.5
17.7
17.2
16.9
14.9
14.0
13.5
12.7
11.7
11.4
11.0
10.8
10.7
10.5
10.4
10.2
9.4
GaAs FET
Bottom view (MGF1451A)
①
Calibration point
Gate
1.0mm
Microstrip line (Z0=50Ω)
Drain
GND
Calibration point
Substrate (Ceramics)
εr=9.8
MetalMetal
carrier
carrier
Calibration point
②
②
③
①Gate
②Source
③Drain
Calibration point
1.1mm
Note
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our
sales offices.
Publication Date : Apr., 2011
3
< Power GaAs FET >
MGF1451A
Micro-X ceramic package
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Publication Date : Apr., 2011
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