Download RRH040P03

RRH040P03
Pch -30V -4A Power MOSFET
Datasheet
lOutline
VDSS
-30V
RDS(on) (Max.)
75mW
ID
-4A
PD
2.0W
lFeatures
SOP8
(7)
(5)
(6)
(8)
(4)
(3)
(1)
(2)
lInner circuit
1) Low on - resistance.
(1)
(2)
(3)
(4)
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
4) Pb-free lead plating ; RoHS compliant
Source
Source
Source
Gate
(5)
(6)
(7)
(8)
Drain
Drain
Drain
Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
lApplication
DC/DC Converter
Type
Taping
Reel size (mm)
330
Tape width (mm)
12
Basic ordering unit (pcs)
Taping code
2,500
TB
Marking
RRH040P03
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-30
V
Continuous drain current
ID *1
4
A
ID,pulse *2
16
A
Gate - Source voltage
VGSS
20
V
Avalanche energy, single pulse
EAS *3
0.1
mJ
PD *4
2.0
W
PD *5
0.65
W
Tj
150
°C
Tstg
-55 to +150
°C
Pulsed drain current
Power dissipation
Junction temperature
Range of storage temperature
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© 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.06 - Rev.C
Data Sheet
RRH040P03
lThermal resistance
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Thermal resistance, junction - ambient
RthJA *4
-
-
62.5
°C/W
Thermal resistance, junction - ambient
RthJA *5
-
-
192
°C/W
lElectrical characteristics(Ta = 25°C)
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Symbol
V(BR)DSS
Conditions
VGS = 0V, ID = -1mA
ΔV(BR)DSS ID = -1mA
ΔTj
referenced to 25°C
Values
Unit
Min.
Typ.
Max.
-30
-
-
V
-
-25
-
mV/C
Zero gate voltage drain current
IDSS
VDS = -30V, VGS = 0V
-
-
-1
mA
Gate - Source leakage current
IGSS
VGS = 20V, VDS = 0V
-
-
10
mA
Gate threshold voltage
VGS (th)
VDS = -10V, ID = -1mA
-1
-
-2.5
V
Gate threshold voltage
temperature coefficient
ΔV(GS)th
ΔTj
ID = -1mA
referenced to 25°C
-
3.9
-
mV/C
VGS= -10V, ID= -4A
-
55
75
VGS= -4.5V, ID= -2A
-
85
115
VGS= -4.0V, ID= -2A
-
95
125
VGS= -10V, ID= -4A, Tj=125°C
-
78
110
RG
f = 1MHz, open drain
-
25
-
W
gfs *6
VDS = -10V, ID = -4A
3.0
6.0
-
S
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
RDS(on)
*6
mW
*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 L ⋍ 10mH, VDD = -15V, Rg = 25W, starting Tj = 25C
*4 Mounted on a ceramic board (30×30×0.8mm)
*5 Mounted on a FR4 (20×20×0.8mm)
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© 2012 ROHM Co., Ltd. All rights reserved.
2/11
2012.06 - Rev.C
Data Sheet
RRH040P03
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Input capacitance
Ciss
VGS = 0V
-
480
-
Output capacitance
Coss
VDS = -10V
-
70
-
Reverse transfer capacitance
Crss
f = 1MHz
-
70
-
VDD ⋍ -15V, VGS = -10V
-
7
-
ID = -2A
-
18
-
td(off) *6
RL = 7.5W
-
50
-
tf *6
RG = 10W
-
37
-
Turn - on delay time
td(on) *6
tr *6
Rise time
Turn - off delay time
Fall time
Unit
pF
ns
lGate Charge characteristics(Ta = 25°C)
Parameter
Total gate charge
Symbol
Qg *6
Gate - Source charge
Qgs *6
Gate - Drain charge
Qgd *6
Conditions
Values
Min.
Typ.
Max.
VDD ⋍ -15V, ID = -4A
VGS = -5V
-
5.2
-
VDD ⋍ -15V, ID = -4A
VGS = -10V
-
9.6
-
-
1.6
-
-
1.6
-
VDD ⋍ -15V, ID = -4A
VGS = -5V
Unit
nC
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Inverse diode continuous,
forward current
Forward voltage
Symbol
IS *1
VSD *6
Reverse recovery time
trr *6
Reverse recovery charge
Qrr *6
Conditions
Values
Unit
Min.
Typ.
Max.
Ta = 25°C
-
-
-1.6
A
VGS = 0V, Is = -4.0A
-
-
-1.2
V
IS = -4A
di/dt = 100A / ms
-
20
40
ns
-
10
20
mC
*6 Plused
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© 2012 ROHM Co., Ltd. All rights reserved.
3/11
2012.06 - Rev.C
Data Sheet
RRH040P03
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
100
Operation in this area P = 10ms P = 1ms
W
W
is limited by RDS(on)
(VGS = 10V )
PW = 100μs
100
10
80
Drain Current : -ID [A]
Power Dissipation : PD/PD max. [%]
120
60
40
20
0
0
50
100
150
1
DC Operation
0.1
0.01
200
Ta=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
0.1
10
100
Drain - Source Voltage : -VDS [V]
Junction Temperature : Tj [°C]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Avalanche Current vs. Power dissipation
10
1000
Ta=25ºC
Single Pulse
Ta=25ºC
Single Pulse
Peak Transient Power : P(W)
Normalized Transient Thermal Resistance : r(t)
1
1
top
D=1
D=0.5
D=0.1
D=0.05
D=0.01
bottom Signle
0.1
0.01
0.001
0.0001
Rth(ch-a)=62.5ºC/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)
0.01
1
10
1
0.0001
100
0.01
1
100
Pulse Width : PW [s]
Pulse Width : PW [s]
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© 2012 ROHM Co., Ltd. All rights reserved.
100
4/11
2012.06 - Rev.C
Data Sheet
RRH040P03
lElectrical characteristic curves
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
100
120%
Starting Tch=25ºC
VDD= -15V
VGS= -10V
RG=10W
Single Pulse
Avalanche Current : -IAR [A]
10
1
0.1
0.01
0.01
0.1
1
10
100
Avalanche Energy : EAS / EAS max. [%]
Fig.5 Avalanche Current vs Inductive Load
100%
80%
60%
40%
20%
0%
0
Coil Inductance : L [mH]
50
75
100
125
150
175
Junction Temperature : Tj [ºC]
Fig.7 Typical Output Characteristics(I)
Fig.8 Typical Output Characteristics(II)
10
20
VGS= -10V
VGS= -4.5V
VGS= -4.0V
VGS= -3.5V
18
Ta= 25ºC
6
4
VGS= -3.0V
2
0
0.2
0.4
0.6
0.8
12
10
Ta= 25ºC
8
6
4
0
1
VGS= -3.0V
0
2
4
6
8
10
Drain - Source Voltage : -VDS [V]
Drain - Source Voltage : -VDS [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
VGS= -4.0V
VGS= -3.5V
14
2
VGS= -2.5V
0
VGS= -10V
16
Drain Current : -ID [A]
8
Drain Current : -ID [A]
25
5/11
2012.06 - Rev.C
Data Sheet
RRH040P03
Fig.9 Breakdown Voltage
vs. Junction Temperature
Fig.10 Typical Transfer Characteristics
60
10
VDS = -10V
Drain Current : -ID [A]
VGS= 0V
ID= -1mA
40
20
0
-50
0
50
100
0.1
0.01
150
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
1
1
Junction Temperature : Tj [°C]
1.5
2
2.5
3
Gate - Source Voltage : -VGS [V]
Fig.11 Gate Threshold Voltage
vs. Junction Temperature
Fig.12 Transconductance vs. Drain Current
3
10
VDS= -10V
ID= -1mA
VDS = 10V
Transconductance : gfs [S]
Gate Threshold Voltage : -VGS(th) [V]
Drain - Source Breakdown Voltage : V(BR)DSS [V]
lElectrical characteristic curves
2
1
0
-50
0
50
100
0.1
0.01
150
Junction Temperature : Tj [°C]
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© 2012 ROHM Co., Ltd. All rights reserved.
1
Ta = -25ºC
Ta = 25ºC
Ta = 75ºC
Ta = 125ºC
0.1
1
10
Drain Current : -ID [A]
6/11
2012.06 - Rev.C
Data Sheet
RRH040P03
lElectrical characteristic curves
Fig.14 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
1.2
300
Drain Current Dissipation
: ID / ID max. (%)
1
0.8
0.6
0.4
0.2
0
-25
0
25
50
75
100
125
150
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.13 Drain Current Derating Curve
Ta= 25ºC
250
ID= -2.0A
200
150
ID= -4.0A
100
50
0
Junction Temperature : Tj [ºC]
0
5
10
15
Gate - Source Voltage : -VGS [V]
1000
100
Ta= 25ºC
VGS= -4.0V
VGS= -4.5V
VGS= -10V
100
.
10
0.1
1
10
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Drain Current : -ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
80
60
40
20
0
VGS= -10V
ID= -4.0A
-50 -25
0
25
50
75
100 125 150
Junction Temperature : Tj [ºC]
7/11
2012.06 - Rev.C
Data Sheet
RRH040P03
lElectrical characteristic curves
1000
1000
VGS = -10V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
100
10
0.1
1
10
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.18 Static Drain - Source On - State
Resistance vs. Drain Current(III)
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Drain Current : -ID [A]
VGS= -4.5V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
100
10
0.1
1
10
Drain Current : -ID [A]
Fig.19 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Static Drain - Source On-State Resistance
: RDS(on) [mW]
1000
VGS= -4.0V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
100
10
0.1
1
10
Drain Current : -ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
8/11
2012.06 - Rev.C
Data Sheet
RRH040P03
lElectrical characteristic curves
Fig.20 Typical Capacitance
vs. Drain - Source Voltage
Fig.21 Switching Characteristics
10000
10000
1000
100
Crss
Coss
10
0.01
0.1
td(off)
1000
Ciss
Switching Time : t [ns]
Capacitance : C [pF]
Ta = 25ºC
f=1MHz
VGS=0V
tf
100
td(on)
10
tr
1
10
1
100
0.01
0.1
1
10
Drain Current : -ID [A]
Drain - Source Voltage : -VDS [V]
Fig.22 Dynamic Input Characteristics
Fig.23 Source Current
vs. Source Drain Voltage
10
10
9
VGS = 0V
8
7
Source Current : -IS [A]
Gate - Source Voltage : -VGS [V]
Ta = 25ºC
VDD= -15V
VGS= -10V
RG=10W
6
5
4
Ta = 25ºC
VDD= -15V
ID= -4.0A
RG=10W
3
2
1
0
0
1
2
3
4
5
6
7
8
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
0.01
9
Total Gate Charge : Qg [nC]
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© 2012 ROHM Co., Ltd. All rights reserved.
1
0
0.5
1
1.5
Source-Drain Voltage : -VDS [V]
9/11
2012.06 - Rev.C
Data Sheet
RRH040P03
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2　Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
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© 2012 ROHM Co., Ltd. All rights reserved.
10/11
2012.06 - Rev.C
Data Sheet
RRH040P03
lDimensions (Unit : mm)
e
c
L1
Lp
E
HE
SOP8
b
x
A3
S A
l1
D
A1
A2
A
b2
e
A
S
e1
y s
Patterm of terminal position areas
DIM
A
A1
A2
A3
b
c
D
E
e
HE
L1
Lp
x
y
DIM
b2
e1
l1
MILIMETERS
MIN
MAX
1.75
0.15
1.40
1.60
0.25
0.30
0.50
0.10
0.30
4.80
5.20
3.75
4.05
1.27
5.70
6.30
0.50
0.70
0.65
0.85
0.15
0.10
MILIMETERS
MIN
MAX
0.65
5.15
1.15
INCHES
MIN
-
MAX
0.069
0.006
0.055
0.063
0.01
0.012
0.004
0.189
0.148
0.02
0.012
0.205
0.159
0.05
0.224
0.02
0.026
0.248
0.028
0.033
0.006
0.004
INCHES
MIN
-
MAX
0.026
0.203
-
0.045
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
11/11
2012.06 - Rev.C
Notice
Notes
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The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
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Please be sure to implement in your equipment using the Products safety measures to guard
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© 2012 ROHM Co., Ltd. All rights reserved.
R1120A