Download RRF015P03

RRF015P03
Pch -30V -1.5A Power MOSFET
Datasheet
lOutline
VDSS
-30V
RDS(on) (Max.)
160mW
ID
-1.5A
PD
0.8W
lFeatures
TUMT3
(3)
(1)
(2)
lInner circuit
1) Low on - resistance.
(1) Gate
(2) Source
(3) Drain
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TUMT3).
4) Pb-free lead plating ; RoHS compliant
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Taping
Reel size (mm)
lApplication
DC/DC converters
Type
180
Tape width (mm)
Basic ordering unit (pcs)
8
3,000
Taping code
TL
Marking
UJ
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
30
V
Continuous drain current
ID *1
1.5
A
ID,pulse *2
6
A
VGSS
20
V
PD *3
0.8
W
PD *4
0.32
W
Tj
150
°C
Tstg
-55 to +150
°C
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
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© 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.06 - Rev.B
Data Sheet
RRF015P03
lThermal resistance
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Thermal resistance, junction - ambient
RthJA *3
-
-
156
°C/W
Thermal resistance, junction - ambient
RthJA *4
-
-
391
°C/W
lElectrical characteristics(Ta = 25°C)
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Symbol
V(BR)DSS
Conditions
VGS = 0V, ID = -1mA
ΔV(BR)DSS ID = 1mA
ΔTj
referenced to 25°C
Values
Unit
Min.
Typ.
Max.
-30
-
-
V
-
-25
-
mV/°C
Zero gate voltage drain current
IDSS
VDS = -30V, VGS = 0V
-
-
-1
mA
Gate - Source leakage current
IGSS
VGS = 20V, VDS = 0V
-
-
10
mA
Gate threshold voltage
VGS (th)
VDS = -10V, ID = -1mA
-1.0
-
-2.5
V
Gate threshold voltage
temperature coefficient
ΔV(GS)th
ΔTj
ID = 1mA
referenced to 25°C
-
3.9
-
mV/°C
VGS= -10V, ID= -1.5A
-
115
160
VGS= -4.5V, ID= -0.7A
-
170
240
VGS= -4.0V, ID= -0.7A
-
190
270
VGS= -10V, ID= -1.5A, Tj=125°C
-
160
230
f = 1MHz, open drain
-
20
-
W
1.2
3.0
-
S
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
RDS(on)
RG
gfs *5
*5
VDS = -10V, ID = -1.5A
mW
*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 Mounted on a seramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
*5 Pulsed
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© 2012 ROHM Co., Ltd. All rights reserved.
2/11
2012.06 - Rev.B
Data Sheet
RRF015P03
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Input capacitance
Ciss
VGS = 0V
-
230
-
Output capacitance
Coss
VDS = -10V
-
40
-
Reverse transfer capacitance
Crss
f = 1MHz
-
33
-
VDD ⋍ -15V, VGS = -10V
-
12
-
tr *5
ID = -0.7A
-
8
-
td(off) *5
RL = 21.4W
-
40
-
RG = 10W
-
13
-
Turn - on delay time
Rise time
Turn - off delay time
td(on) *5
tf *5
Fall time
Unit
pF
ns
lGate Charge characteristics (Ta = 25°C)
Parameter
Total gate charge
Symbol
Qg *5
Gate - Source charge
Qgs *5
Gate - Drain charge
Qgd *5
Conditions
Values
Min.
Typ.
Max.
VDD ⋍ -15V, ID = -1.5A
VGS = -5V
-
3.2
-
VDD ⋍ -15V, ID = -1.5A
VGS = -10V
-
6.4
-
-
1.2
-
-
0.7
-
VDD ⋍ -15V, ID = -1.5A
VGS = -5V
Unit
nC
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Inverse diode continuous,
forward current
Forward voltage
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© 2012 ROHM Co., Ltd. All rights reserved.
Symbol
IS *1
VSD *5
Conditions
Values
Unit
Min.
Typ.
Max.
Ta = 25°C
-
-
-0.6
A
VGS = 0V, Is = -1.5A
-
-
-1.2
V
3/11
2012.06 - Rev.B
Data Sheet
RRF015P03
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
10
100
PW = 100μs
Drain Current : -ID [A]
Power Dissipation : PD/PD max. [%]
120
80
60
40
20
0
0
50
100
150
1
Operation in this area
is limited by RDS(on)
( VGS = -10V )
0.1
PW = 10ms
DC Operation
Ta=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
0.01
200
0.1
1
10
100
Drain - Source Voltage : -VDS [V]
Junction Temperature : Tj [°C]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maxmum Power dissipation
10
1000
Ta=25ºC
Single Pulse
Ta=25ºC
Single Pulse
Peak Transient Power : P(W)
Normalized Transient Thermal Resistance : r(t)
PW = 1ms
1
top
D=1
D=0.5
D=0.1
D=0.05
D=0.01
bottom Signle
0.1
Rth(ch-a)=156ºC/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)
0.01
0.001
0.0001
0.01
1
10
1
0.1
0.0001
100
0.01
1
100
Pulse Width : PW [s]
Pulse Width : PW [s]
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© 2012 ROHM Co., Ltd. All rights reserved.
100
4/11
2012.06 - Rev.B
Data Sheet
RRF015P03
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
3
3
Ta= 25ºC
2
1
Drain Current : -ID [A]
Drain Current : -ID [A]
VGS= -3.0V
VGS= -10V
VGS= -4.5V
VGS= -4.0V
VGS= -3.0V
2
VGS= -10V
VGS= -4.5V
VGS= -4.0V
1
VGS= -2.5V
VGS= -2.5V
0
0
0.2
0.4
0.6
0.8
0
1
0
2
4
6
8
10
Drain - Source Voltage : -VDS [V]
Drain - Source Voltage : -VDS [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
Ta= 25ºC
5/11
2012.06 - Rev.B
Data Sheet
RRF015P03
Fig.7 Breakdown Voltage
vs. Junction Temperature
Fig.8 Typical Transfer Characteristics
60
10
VDS = -10V
VGS= 0V
ID= -1mA
Drain Current : -ID [A]
1
40
20
0
-50
0
50
100
0.01
0.001
150
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
0
Junction Temperature : Tj [°C]
1
2
3
4
Gate - Source Voltage : -VGS [V]
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
Fig.10 Transconductance vs. Drain Current
3
10
VDS = -10V
VDS= -10V
ID= -1mA
Transconductance : gfs [S]
Gate Threshold Voltage : -VGS(th) [V]
Drain - Source Breakdown Voltage : -V(BR)DSS [V]
lElectrical characteristic curves
2
1
0
-50
0
50
100
Ta = -25ºC
Ta = 25ºC
Ta = 75ºC
Ta = 125ºC
0.1
0.01
150
Junction Temperature : Tj [°C]
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© 2012 ROHM Co., Ltd. All rights reserved.
1
0.1
1
10
Drain Current : -ID [A]
6/11
2012.06 - Rev.B
Data Sheet
RRF015P03
lElectrical characteristic curves
Fig.11 Drain CurrentDerating Curve
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
500
1
0.8
0.6
0.4
0.2
0
-25
0
25
50
75
100
125
150
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Drain Current Dissipation : ID / ID max.(%)
1.2
Ta= 25ºC
400
ID= -1.5A
300
ID= -0.7A
200
100
0
0
Junction Temperature : Tj [ºC]
5
10
15
Gate - Source Voltage : -VGS [V]
1000
200
Ta= 25ºC
VGS= -4.0V
VGS= -4.5V
VGS= -10V
100
10
0.1
1
10
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Drain Current : -ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
150
100
50
VGS= -10V
ID= -1.5A
0
-50 -25
0
25
50
75 100 125 150
Junction Temperature : Tj [ºC]
7/11
2012.06 - Rev.B
Data Sheet
RRF015P03
lElectrical characteristic curves
1000
1000
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
VGS = -10V
100
10
0.1
1
10
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(III)
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Drain Current : -ID [A]
VGS = -4.5V
100
10
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
1
10
Drain Current : -ID [A]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Static Drain - Source On-State Resistance
: RDS(on) [mW]
1000
VGS = -4.0V
100
10
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
1
10
Drain Current : -ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
8/11
2012.06 - Rev.B
Data Sheet
RRF015P03
lElectrical characteristic curves
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Fig.19 Switching Characteristics
1000
1000
tf
100
Crss
10
0.01
Coss
0.1
Ta = 25ºC
VDD= -15V
VGS= -10V
RG=10W
td(off)
Switching Time : t [ns]
Capacitance : C [pF]
Ciss
Ta = 25ºC
f=1MHz
VGS=0V
100
10
td(on)
tr
1
10
1
100
0.01
0.1
1
10
Drain Current : -ID [A]
Drain - Source Voltage : -VDS [V]
Fig.20 Dynamic Input Characteristics
Fig.21 Source Current
vs. Source Drain Voltage
10
10
8
Source Current : -IS [A]
Gate - Source Voltage : -VGS [V]
VGS = 0V
6
4
Ta = 25ºC
VDD= -15V
ID= -1.5A
RG=10W
2
0
0
1
2
3
4
5
6
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
0.01
7
Total Gate Charge : Qg [nC]
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© 2012 ROHM Co., Ltd. All rights reserved.
1
0
0.5
1
1.5
Source-Drain Voltage : -VDS [V]
9/11
2012.06 - Rev.B
Data Sheet
RRF015P03
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2　Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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© 2012 ROHM Co., Ltd. All rights reserved.
10/11
2012.06 - Rev.B
Data Sheet
RRF015P03
lDimensions (Unit : mm)
D
A
e
b
Lp
HE
E
L
TUMT3
x
c
S A
e1
A
A2
e
A1
l1
y S
S
b2
Patterm of terminal position areas
DIM
A
A1
A2
b
c
D
E
e
HE
L
Lp
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
0.85
0.00
0.10
0.72
0.82
0.25
0.40
0.12
0.22
1.90
2.10
1.60
1.80
0.65
2.00
2.20
0.20
0.40
0.10
0.10
MILIMETERS
MIN
MAX
1.70
0.50
0.50
INCHES
MIN
0
0.028
0.01
0.005
0.075
0.063
MAX
0.033
0.004
0.032
0.016
0.009
0.083
0.071
0.03
0.079
0.087
0.01
-
0.016
0.004
0.004
INCHES
MIN
MAX
0.067
-
0.02
0.02
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
11/11
2012.06 - Rev.B
Notice
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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examples of application circuits for the Products. ROHM does not grant you, explicitly or
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© 2012 ROHM Co., Ltd. All rights reserved.
R1120A