Download Ion Bombardment

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project

Document related concepts
no text concepts found
Transcript
2007년 추계 금속재료학회 전산재료과학분과 심포지엄
분자동역학을 이용한 금속표면의 Kinetic
Roughening 현상에 대한 재 증착 효과 연구
Sang-Pil Kim1,2, Kwang-Ryeol Lee1, Jae-Sung Kim3 and Yong-Chae Chung2
1. Computational Science Center, KIST, Seoul, Korea
2. Division of Advanced Materials Science Engineering, Hanyang University, Seoul, Korea
3. Department of Physics, Sook-Myung Women’s University, Seoul, Korea
Ion Bombardment (Sputtering)
Sputter deposition
Ion bombardment
Morphological evolution
of the sputtered surface
 We focused on the structural evolution in Ion Bombardment
T.C. Kim et al., PRL 92, 246104 (2001).
Kinetic Roughening (Patterning)
 “Quantum dots” on GaSb, fabricated by normalincidence sputter patterning using 420 eV Ar+.
Dots sizes ~ 15 nm.
Facsko et al., SCIENCE (1999)
Under some conditions of uniform ion irradiation,
spontaneously-arising sputter pattern
topography arises that takes the form of 1-D
ripple or 2-D arrays of dots.
Theoretical Approach
Sigmund’s theory
•
Limitation in linear theory
 Agreement: ripple formation/ orientation
 Disagreement: wavelength coarsening, multi-ion beam sputtering
•
Toward improvement
 Nonlinear terms considered
 New terms included to the equation
(ex. shadowing effect, surface anisotropy, re-deposition effect…)
Re-deposition Effect
Ion
Sputtering Process
 Erosion (conventional
concept)
+ Redeposition
Sputtered atoms
Adatoms (or redeposited atoms)
10 keV Ar ion impacts on Au(001)
Calculation Procedure
Ion
Ar+
Materials
Au & Pd(001)
Incident Energy
0.5 keV
Incident Angle
(Ө)
0, 30, 45, 60, 75°
 Φ = 0°
 Temperature: 300 K
 damping layer included
 Force field
 EAM1) + ZBL2)
1)
2)
S.M. Foiles et al., PRB 33, 7983 (1986).
J.F. Ziegler et al., The Stopping and Range of
Ions in Matter, Pergamon, New York, (1985).
Sputter Yield & Redeposition
20
Redeposition Yield (atoms/ion)
Sputtering Yield (atoms/ion)
4
3
2
0.5keV Ar
1
Au
Pd
0
16
12
8
0.5keV Ar
4
Au
Pd
0
0
10
20
30
40
50
60
Incident Angle (degrees)
70
80
90
0
10
20
30
40
50
60
Incident Angle (degrees)
70
80
90
Sputter Yield vs. Redeposition
6.0
5.5
Ratio = Yredeposition / YSputtering
5.0
Au
Pd
4.5
Ratio
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
10
20
30
40
50
60
Incident Angle (degrees)
70
80
90
Redeposition Distribution
60
Au
0.5keV Au 30
0.5keV Au Normal
40
Y
20
0
-20
-40
-60
60
-60
-40
-20
0
20
40
60
40
Y
20
0
-20
-40
0.5keV Au 60
0.5keV Au 45
-60
-60
-40
-20
0
X
20
40
-60
60
-40
-20
0
Y
20
40
60
Redeposition Distribution
60
Pd
0.5keV Pd Normal
0.5keV Pd 30
0.5keV Pd 45
0.5keV Pd 60
40
Y
20
0
-20
-40
-60
60
40
Y
20
0
-20
-40
-60
-60
-40
-20
0
X
20
40
-60
60
-40
-20
0
X
20
40
60
Summary & Future works
• The effect of redeposition clearly shown on
Au, Pd surface.
• From MD calculation, we could obtain
quantitative parameters of redeposition effect
(ratio, distribution).
• Based on MD calculation, we could improve
kinetic roughening equation.
+α
Related documents