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Transcript
LOW DARK CURRENT TRANSPARENT SCHOTTKY BARRIER UV DETECTORS a) a) a) a) a) G. Simin , Asif Khan , J. W Yang , A. Lunev , V. Adivarahan N. Pala b), M. Shur b), R. Gaska b) Department of ECE, University of South Carolina, Columbia, South Carolina 29208, USA Department of ECSE, Rensselaer Polytechnic Institute 110 8th Street, Troy, NY 12180, M. Asif Khan, 803-777-7475, Fax: 803-777-2447, [email protected] a) Noise Characteristics Noise Spectral density, A /Hz. ABSTRACT We report on transparent schottky barrier detectors that have record low values of leakage currents. The selection of lateral geometry precludes the need for mesa etching which avoids surface defects and improves leakage characteristics. -180 Si for 5D3 at -1.35V 2 Si for3C1 at -1.35V Samples: n-GaN epilayers grown by MOCVD over basal plane sapphire substrate. Experimental Details: 1. Formation of annular ohmic contacts consisting of Ti/Al/Ni/Au. 2. Formation 50-75 Angstroms Pt inner schottky contacts by standard liftoff techniques. -190 -200 -210 -220 -230 -240 -250 1 10 Evaluation of reverse leakage current. 100 (1/f) Frequency Noise Measurement of photodetector. Evaluation of response time of detector using N2 pulse laser. RC Test Circuit Pictorial Presentation of the characterization setup and Fabricated UV-Photodetector device structure. Transient Response 10 k 100 A 278, Lateral; Transparent Pt Forward bias, 5V Reverse bias, 5V 60 80 RC Test Circuit Response, mV 50 Sapphire Oscilloscope Probe Gold Contact Ohmic Contact Schottky Contact n-GaN Buffer AlN 60 40 , ns HP Parameter Analyzer. To Oscilloscope 1k 3.3 nF + - DC Bias N2 Pulse laser 40 30 20 20 0 10 0 10 20 30 40 50 0 200 400 600 800 1000 RL, Ohm Time, ns CONCLUSIONS Reverse I-V Curve -3 -2 -4.00E-09 -6.00E-09 -8.00E-09 -1.00E-08 -1.20E-08 Voltage,(V) Current,(A) -4 0.00E+00 -1 0 -2.00E-09 The ultra-low leakage is possible because the mesa etching is not required which leads to less surface defects. No Silicon Dioxide With Silicon Dioxide 2.00E-09 -5 The lateral geometry photodetector has superior leakage current as compared to the vertical geometry device. At a reverse bias of -40V the dark current is as low as 1nA. Forward I-V Curve No Silicon Dioxide With Silicon Dioxide Current,(A) b) 9.00E-04 8.00E-04 7.00E-04 6.00E-04 5.00E-04 4.00E-04 3.00E-04 2.00E-04 1.00E-04 0.00E+00 -1.00E-04 0 The time of response for these devices are measured to be 15ns or less. This time is RC limited. We expect the actual time of response to be in the order of 10-100 ps. Use of Silicon Dioxide helps further to reduce the leakage and this proves that the surface between the two films are perfect. The use of this particular geometry involves fewer number of processing steps also. The low frequency noise measurements indicates that the 1/f noise is dominant factor, at 10 Hz frequency the noise spectral density is measured to be 5x10-23 A2/Hz. This is about two orders of magnitude better than previously reported for GaN transparent Schottky devices with a MESA etch. 1 2 Voltage,(V) 3