Download TNO Presentation - ESA Microelectronics Section

Why we dare to go without
DARE (library)
Innovation for life
ESA AMICSA workshop
TNO is active in
five core areas
• Quality of Life
• Defence, Security & Safety
• Science & Industry
• Built Environment &
Geosciences
• Information & Communication
Technology
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Activities in Opto-Mechanical Instrumentation for Space Applications
•Scientific payload instrumentation, such as spectrometers
•S59 UV stellar spectrometer
•ISO Short wave Spectrometer (5-15 microns)
•Herschel HIFI design and production support
•Herschel HIFI cryogenic alignment camera system
•Earth-observation payload instrumentation & calibration
•GOME, SCIAMACHY, OMI design, production & calibration
•Diffuser design, production and calibration
•Optical Ground Support Equipment (GOME, SCIA, IASI)
•Multi-spectral imaging spectrometer (Earthcare)
•Precision Mechanics
•Refocussing mechanisms for MSG
•Optical Delay-Lines (Darwin technology development)
•Achromatic Phase Shifters, Nulling technology (Darwin)
•GAIA basic angle monitoring; Wave Front Sensor; Test eqpt
•
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Avionics Equipment and Other business
• Sun sensors
• Precision Optical Metrology sensors for Formation Flying
• Fibre-Bragg grating for in-situ measurement of stress,
deformation etc
ESA AMICSA workshop
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TNO’s current portfolio
• Existing Products
• Current developments - SOTS
• Specials and mission specific sensors
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Start of the miniaturisation within Microned
• Autonomous micro-digital sunsensor
•Autonomous power
•Wireless link
•MEMS based
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Main deliverable
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•
•
•
•
•
•
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APS+ chip
Single chip sunsensor
Optimised for low power
TSMC 0.18 micron process
Last spin-out 5th May
Chips received 23th of june
Standard design library
Several circuit design
modifications to avoid SEL and
SEU related issues.
ESA AMICSA workshop
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Key personel
Albert Theuwissen
Ning Xie
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Key personel
Murat Durkut
Johan Leijtens
Henk Hakkesteegt
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Henk Jansen
Noordwijk 2010-09-06
Total dose radiation tolerance
0.18 micron CMOS TSMC
Pixels tested up to 100 krad
No significant impact observed
Using DARE library would
increase power consumption by
factor of 2
1,0
0,9
0,8
Quantum Efficiency
•
•
•
•
0,7
2
Pinned Photodiode area/Pixel: 53 (m )
Pixel Number: 5500
2
Total Pinned Photodiode Area: 291500 (m )
Integration Time: 0,03 (sec)
0,6
Before Radiation
86krad
106krad
0,5
0,4
0,3
0,2
0,1
0,0
200 300 400 500 600 700 800 900 100011001200
Wavelength (nm)
• Low power was the main requirement
• 20krad is sufficient for majority of applications
• For small systems extra shielding has less impact
• No DARE library was used
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Radiation tolerance tested with gated pixel
• total ionizing dose (TID) level of
31krad, 86krad, 106krad, 109krad
and 137krad with an average
energy of 46.2keV
Number of Pixels
• No significant decrease in
quantum efficiency
• No appreciable increase in
dark current for 30krad
1000
Before Radiation
31krad
109krad
100
TG Transistor is off
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1
0
Ref:
10
20
40
Dark Random Noise (DN)
ESA AMICSA workshop
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Increased darkcurrent not significant.
• Significantly lower then
threshold
• Noise on reading less
then 0.004 degrees for
±47 degree system
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Single Event Latch-up in CMOS
• Parasitic SCR
(through substrate)
• SEL if gain >1
• SEU if gain <1
• Latch up can
destroy the circuit
N.B. Significant current can only flow
if both N+ and P+ terminals are
connected to low impedance, and
substrate resistance is high enough
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SEL hardened pixel design
Winner takes all 3T pixel design
• Parasitic SCR through
NMOS reset transistor and
PMOS source follower
• Reduced QE due to N well
for PMOS transistor
3.3 V
n+
n+
np-
p+ p+
p+
p+
N.B. Reduced QE not important for this application, because
there is an abundance of light.
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SEL hardened winner takes all pixel design
3.3 V
• All PMOS design
• PMOS reset transistor is not
significantly reducing QE any
further
• Extra ground connection per pixel
to reduce substrate
resistance.(decreases the effect
of any SEU)
n+
n+
np-
p+ p+
p+
p+
1.8 V
3.3 V
p+
p+
No SCR no SEL
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n+
p-
p+ p+
p+
p+
Noordwijk 2010-09-06
Ten pixel pin-hole
• No false detection of the sunspot due to bad pixels or SEU
• Replace affected pixels by the
average of neighbouring pixels
• Automatic compensation of SEE
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Single cycle acquisition through winner takes all
hardware.
• No forbidden states in the
internal state machines.
• Hard wired configuration straps
• Automatic switchback to
acquisition mode at SEU
Loss of accuracy for a single
cycle due to SEU is the worst
consequence
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Conclusions
• Power consumption is our main driver
• Total dose radiation tolerance is sufficient for most
sunsensor applications
• SEL/SEU effects are deemed more critical and tackled
through several design decisions (DARE)
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That’s why we dare to go without
DARE libraries
But we don’t dare to go without
DARE
Thank you for
your attention.
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ESA AMICSA workshop
For further information
Johan Leijtens
+31 15 269 2191
[email protected]
Noordwijk 2010-09-06