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Chapter Four
4-1
Basic BJT Amplifiers
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Figure 4.2
4-2
(a) Bipolar transistor inverter circuit; (b) inverter
transfer characteristics
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Figure 4.4
Common-emitter transistor characteristics, dc load line, and sinusoidal
variation in base current, collector current, and collector-emitter voltage
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4-3
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Figure 4.5
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Base current versus base-emitter voltage characteristic
with superimposed sinusoidal signals
4-4
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Figure 4.8
4-5
A simplified small-signal hybrid- equivalent circuit for the npn transistor
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4-6
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Figure 4.13
Expanded small-signal model of the BJT, including the Early
effect, for the case when the circuit contains the (a)
transconductance and (b) the current gain parameters
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4-7
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Figure 4.22a
4-8
Basic data sheet for the 2N2222 bipolar transistor
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Figure 4.22b
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4-9
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Figure 4.28
A bipolar circuit with an emitter resistor, a voltage-divider biasing circuit,
and a coupling capacitor
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4-10
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Figure 4.29
4-11
The small-signal equivalent circuit with an emitter resistor
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Figure 4.44
4-12
Emitter-follower circuit
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Figure 4.45
4-13
Small-signal equivalent circuit of the emitter-follower
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Figure 4.53
4-14
Basic common-base circuit
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Figure 4.54
4-15
(a) Simplified hybrid- model of the npn transistor and (b) small-signal
equivalent circuit of the common-base circuit
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