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Lenovo - Sony Technical Meeting August 27, 2003 Sony Corp. 1 “Aries” Project Members Marketing Mgr China Local Biz Support Akira SHIRAISHI Edward WU/Robert GAO China Local Tech Support Yukihito NISHIMURA Planning Promoter Kazuhiko YOSHIUCHI Electrical Mgr Mechanical Mgr Software Engr Safety Engr Takanori MARUICHI Hiromasa IGUCHI (Isao SUZUKI) Kyusuke KUWAHARA 2 Factories & Manufacturing Capabilities China (Sony Electronics Wuxi)Cell&Pack Japan (Sony Fukushima)Cell& Pack (Sony Tochigi)Cell Taiwan (Solectron Taiwan)Pack Malaysia (Sony Electronics Malaysia)Pack 3 Cell Information Cylindrical(US18650) & Polymer 4 Cell Line Up for PC Battery CELL US18650G5 Cylindrical Cell Nominal Capacity PC Polymer Cell Nominal Capacity US18650G7 UP5541100 CY2003 CY2004 CY2005 2150mAh/8.1Wh 2400mAh/9.1Wh K2: 2200mAh/8.3Wh K3: 2400mAh/9.1Wh 5 US18650G7, Cell Safety Requirement Max Charge Voltage; 4.25V/cell (Open Circuit Voltage) Cell Temperature; Charge ; 0 to 60 deg. C Discharge; -20 to 70 deg. C Charging Current ; less than 0.7C If capacity is 2400mAh, 0.7C means; 2.4A X 0.7 = 1.68A Discharging Current; less than 1.0C If capacity is 2400mAh, 1C means; 2.4A X 1 = 2.4A 6 US18650G7, Electrical Info. * Standard Charge Condition Charge Method Charge Up Voltage Charge Current Charge Time Ambiance Temperature : constant current constant voltage : 4.2± 0.05V : 1.0A : 5.0 hours charge o : 23 C at room temperature, 3.0V cut off average capacity 3.75V (average discharge voltage) Nominal Capacity (0.2C discharge) 2400mAh 9.0Wh Rated Capacity (0.2C discharge) 2250mAh 8.4Wh minimum capacity Capacity at 0.5C 2350mAh (8.6Wh) average capacity Capacity at 1C 2300mAh (8.2Wh) average capacity Nominal Voltage 3.7V Internal Impedance 55mΩ measured by AC1kHz Cycle Performance 80 % of Initial capacity at 300 cycles 0.7A discharge 7 US18650G7, Mechanical Info. +0.15 φ18.2 -0.20 (Diameter of Body) +0.2 64.9 -0.2 (φ7.2) -0.20 φ18.2 +0.15 (Diameter of Top) Cell Size (with plastic tube) (0.3) 8 uP and AFE Information Micro Processor---bq2083 Analogue Front End---bq29311 9 bq-uP Diagram Thermal Fuse with Resistor d-FET Active Fuse c-FET (+) 2nd Over Charge Protector Analogue Front End Micro Processor (C)Clock (D)Data bq2083 bq29311 Batt _Pres Sys _Pres EEPROM (2k) Thermistor (FETs temp.) 32kHz Current sense Resistor (10mΩ) Batt_Alart (-) Thermistor (Cells temp.) *Battery_pres and Sys_pres are not necessary. 10 bq-uP Schematic (for example) 11 Mitsubishi-uP Diagram (for example) Pre-charge Active Fuse Batt + TH1 TH1/TH2:thermistor Data/CLK 2nd Over Charge Protector Micro Processor Data Vdd Mitsubishi Clock Batt Pre SYS Pre Batt Alarm EEPROM Clock DIN Analogue Front End IC TH2 (output of each cell voltage and current 5V output, Low Battery voltage detect, FET-SW drive,reset function) DOUT AOUT (V・I data) 0.07Ω 1/2W Batt - 12 Mechanical Information UL requires UL flammability “V-1” for enclosure. Min thickness; 0.8 mm---PC 1.2 to 1.6 mm---PC+ABS 13 Pack Structure (for example) * Connection tab and thermal fuses are replaceable to other components. 14 Development Schedule Fiscal year ’03/3Q 4Q ’04/1Q 2Q 3Q 4Q 10 11 12 1 2 3 4 5 6 7 8 9 10 11 12 EVT (Hand Made Case) DVT (Hard Tooling Case) Safety Application Design *EVT sample 2 pcs. Hard Tooling (Min. 2 months) *DVT sample 20 pcs. (Min. 1.5 months) Design Approval PVT *PVT sample 50 pcs. MP Mass Production 15 WELCOME TO SONY ELECTRONICS WUXI(SEW) 索尼電子(無錫)有限公司 16 Wuxi Summary Location: Beijing Wuxi Shanghai East longitude119º31’ North latitude31°7’ East of China、the center of Changjiang delta area 103Km from Shanghai、147Km from Nanjing Area: 4,650km² DT: 517.7km² Population: 5 million DT 1.2 million Industry lines: Mechanism、Electronics、Light-industries、 Textile、Chemical、Pharmaceutical GDP 120.1billion in 2000 、one of the first ten in the country GDP RMB28,000/person、the 4th in the country : Traffic: Express way to SHA & Nanjing、312 National Road、Railway to SHA & Nanjing Education: Jiangnan University 17 New District Industrial Zone Summary Location: At the east-south of Wuxi city, 6Km from downtown. Character National Hi-tech Industrial Development, No. 1 of the best 50 national hi-tech industrial development : Favorable policy: Income tax rate 15% (Normal area 30%, littoral area 24%) 2 years’ income tax-free, 3 years’ income tax half-paid Hi-tech enterprise , - 5 free 5 half Enterprises come in this district: America : Seagate、Kodak、GE German : SIEMENS、BOSCH、Bayer、HOIST Sweden : VOLVO、 Astra English : COMINS、Rexam Japan : SHARP、Alps、Murata、Sumitomo、Hitachi、 National、Toshiba、Maruko、Nittobo 18 Company Profile Date of incorporation : August 22nd/2000 ● Leading Company : Energy Company ● Ownership : Sony China 100%, Registered Capital : US$29.5mil ● Board Chairman : Hiroshi Nakagawa Vice Board Chairman : Masaru Suzuki Managing Director : Taizo Suzuki ● Address : 62 Block, Wuxi National Hi-tech Industrial Development Zone. Main Products : Lithium-Ion Polymer Battery, Land Area : 110,000㎡, Factory-site 10,600 ㎡ ● Rental Address : 52 Block, Wuxi National Hi-tech Industrial Development Zone. Main Products : Projector TV, Factory-site 3,855㎡ ● New Plant Address : 64 Block, - ditto - . Main Products : Electronics Devices. Land Area : 210,000㎡, Factory-site ( Initial ) : 19,100㎡ ● Employee As of Apr/2003 : 1,305 persons, include 11 persons of Japanese (Battery) ● 19 Sony China Battery Div- Sales Network Marketing & Sales Office Sales Branch Manufacture Beijing (北京) Branch Shanghai (上海)Sales & Marketing Office Shenzheng (深圳) Branch Sony Wuxi (無錫) Electronics Sony Hong Kong 20 Business Terms Development Cost : 1) NRE – New model development fee 2) Sample Fee 3) Tooling Fee Delivery Terms : ex-Sony Wuxi Factory or CIF Lenovo Shanghai Factory Warranty : 12 months after manufacturing date 21 Questions Contact window for business matter ? (Procurement for R&D parts and MP parts) Function of Beijing team and Shanghai team ? 22 Appendix-1; Discharge Curves of US18650G6 Discharge Load Characteristics (US18650G6) 4.5 1W 3W 5W 7W 10W Cell Voltage (V) 4.0 12W 15W 18W 20W 24W 3.5 3.0 2.5 Charge : 4.20Vmax 0.7CAmax 30mAcut Discharge : 3.0Vcut o Temperature : 23 C 2.0 0 1 2 3 4 5 6 7 8 9 Discharge Capacity (Wh) 23 Appendix-2; Charge Curves of US18650G6 Charge Characteristics 5 2 Charge Voltage 4 1.6 Charge : 4.20Vmax 0.7Cmax 3 1.2 US18650G5 US18650G6 2 0.8 Charge Current 1 Charge Current / A Charge Voltage / V o Temperature : 23 C 0.4 US18650G4 0 0 0 0.5 1 1.5 2 2.5 3 3.5 Charge time / hours 24